Light emitting element and display device including the same

Patent metadata

Field	Value
Publication number	US-12170343-B2
Application number	US-202117307717-A
Country	US
Kind code	B2
Filing date	May 4, 2021
Priority date	Sep 4, 2020
Publication date	Dec 17, 2024
Grant date	Dec 17, 2024

Abstract

A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.

First claim

What is claimed is:

1. A light emitting element, comprising:
a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;
a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and
an insulation layer surrounding an outer surface of the passivation layer,
wherein the passivation layer comprises a two-dimensional (2D) material, and
wherein the 2D material comprises at least one selected from CaF 2 , Ti 0.9 O 2 , Mica, WS 2 , MoS 2 , Ni(OH) 2 , Cu(OH) 2 , Mg(OH) 2 , GaS, and Talc, and
wherein the passivation layer comprises a plurality of passivation layers spaced apart from each other in a length direction of the light emitting element on the outer surface of the at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer.

2. The light emitting element of claim 1 , wherein:
a band gap of the 2D material is 3.5 eV or more.

3. The light emitting element of claim 1 , wherein:
the passivation layer is partially on an outer surface of the first semiconductor layer, the second semiconductor layer, and/or the active layer, and
an outer surface of the first semiconductor layer, the second semiconductor layer, and/or the active layer exposed by the passivation layer is in contact with the insulation layer.

4. The light emitting element of claim 1 , wherein:
the passivation layer is entirely on outer surfaces of the first semiconductor layer, the second semiconductor layer, and/or the active layer.

5. The light emitting element of claim 1 , wherein:
the passivation layer is directly on outer surfaces of the first semiconductor layer, the second semiconductor layer, and/or the active layer.

6. The light emitting element of claim 1 , wherein:
the insulation layer comprises an inorganic material.

7. The light emitting element of claim 6 , wherein:
the inorganic material comprises at least one selected from SiOx, SiNx, SiOxNy, AlOx, AlNx, ZrOx, HfOx, and TiOx.

8. The light emitting element of claim 1 , wherein:
the insulation layer comprises the same material as the first semiconductor layer, the second semiconductor layer, and/or the active layer.

9. The light emitting element of claim 1 , wherein:
the insulation layer is directly on the passivation layer.

10. A display device comprising:
a plurality of pixels, each of the plurality of pixels comprising:
a first electrode and a second electrode spaced apart from each other, and
light emitting elements between the first electrode and the second electrode,
wherein each of the light emitting elements comprises a semiconductor core,
a passivation layer surrounding an outer surface of the semiconductor core, and
an insulation layer surrounding an outer surface of the passivation layer,
wherein the passivation layer comprises a two-dimensional (2D) material, and
wherein the 2D material comprises at least one selected from CaF 2 , Ti 0.9 O 2 , Mica, WS 2 , MoS 2 , Ni(OH) 2 , Cu(OH) 2 , Mg(OH) 2 , GaS, and Talc, and
wherein the passivation layer comprises a plurality of passivation layers spaced apart from each other in a length direction of the light emitting element on the outer surface of the at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer.

11. The display device of claim 10 , wherein:
the passivation layer is partially on the outer surface of the semiconductor core, and
the semiconductor core exposed by the passivation layer is in contact with the insulation layer.

12. The display device of claim 10 , wherein:
the passivation layer is entirely on the outer surface of the semiconductor core.

13. The display device of claim 10 , wherein:
a band gap of the 2D material is 3.5 eV or more.

14. The display device of claim 10 , wherein:
the semiconductor core comprises the first semiconductor layer, the second semiconductor layer, and the active layer between the first semiconductor layer and the second semiconductor layer.

15. The display device of claim 14 , wherein:
the passivation layer is directly on outer surfaces of the first semiconductor layer, the second semiconductor layer, and/or the active layer.

16. The display device of claim 10 , wherein:
the insulation layer comprises an inorganic material.

17. The display device of claim 10 , wherein:
the insulation layer comprises the same material as the semiconductor core.

18. The display device of claim 10 , wherein:
the insulation layer is directly on the passivation layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Lee Jong Won
• Yoo Je Won
• Yoo Chul Jong
• Cho Hyun Min

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title