Method of forming a light emitting diode structure and a light diode structure

Patent metadata

Field	Value
Publication number	US-2016149084-A1
Application number	US-201514918342-A
Country	US
Kind code	A1
Filing date	Oct 20, 2015
Priority date	May 18, 2010
Publication date	May 26, 2016
Grant date	—

Abstract

A method of forming a vertical III-nitride based light emitting diode structure 5 and a vertical III-nitride based light emitting diode structure can be provided. The method comprises forming a III-nitride based light emitting structure on a silicon-oninsulator (SOI) substrate; forming a metal-based electrode structure on the III-nitride based light emitting structure; and removing the SOI substrate by a layer transfer process such that the metal-based electrode structure functions as a metal-based 10 substrate of the light emitting structure.

First claim

1 - 24 . (canceled)

25 . A vertical III-nitride based light emitting diode structure, the structure comprising,
a III-nitride based light emitting structure for light emission formed on a metal-based substrate; wherein the III-nitride based light emitting diode structure is formed by layer transfer from a patterned silicon-on-insulator (SOI) substrate, and wherein a Group III metal content in the vertical III-nitride based light emitting diode structure is inhomogeneous for modulating light emission of the light emitting diode structure.

26 . The structure as claimed in claim 25 , further comprising a metal seed layer formed between the III-nitride based light emitting structure and the metal-based substrate for facilitating the layer transfer.

27 . The structure as claimed in claim 26 , wherein the seed layer comprises nickel having a thickness ranging from about 100 nm to about 1000 nm.

28 . The structure of claim 26 , wherein the seed layer is bonded to the metal-based substrate using electroplating, electroless deposition or both.

29 . (canceled)

30 . The structure of claim 25 , further comprising a reflective mirror layer capable of functioning as a p-type contact electrode, the mirror layer being formed between the metal-based substrate and the III-nitride based light emitting structure.

31 . The structure as claimed in claim 25 , wherein the reflective mirror layer comprises a plurality of layers selected from a group of material consisting of nickel, gold, platinum, silver, palladium and ruthenium.

32 . The structure of claim 25 , further comprising photonic crystal (PhC) structures formed on an n-doped III-nitride layer of the III-nitride based light emitting diode structure, the PhC structures having lateral and vertical dimensions of less than about 400 nm.

33 . The structure of claim 25 , further comprising photonic crystal (PhC) structures formed on an n-doped III-nitride layer of the III-nitride based light emitting diode structure by nanoscale surface patterning to create periodic patterns selected from a group consisting of nanopillars, nanoholes and nanopyramid structures.

34 . The structure of claim 25 , further comprising an n-type contact electrode structure formed on the III-nitride based light emitting structure.

35 . The structure as claimed in claim 34 , wherein the n-type contact electrode structure comprises a plurality of layers selected from a group of material consisting of titanium, aluminium, gold, chromium and nickel.

36 . An III-nitride based light emitting diode structure, the structure comprising,
a patterned buried oxide layer of a silicon-on-insulator (SOI) substrate; a III-nitride based light emitting structure for light emission formed on the patterned SOI substrate; and wherein a Group III metal content in the active layers of the III-nitride based light emitting structure is inhomogeneous for modulating an emission of the light emitting diode structure.

37 . The structure of claim 36 , wherein the III-nitride based light emitting structure comprises one or more nitride-based buffer layers formed directly on the patterned SOI substrate.

38 - 39 . (canceled)

Assignees

• Agency Science Tech & Res

Inventors

• Sudhiranjan Tripathy
• Vivian Kaixin Lin
• Siew Lang Teo
• Surani Bin Dolmanan

Classifications

• H10H20/872

  Periodic patterns for optical field-shaping, e.g. photonic bandgap structures · CPC title

• H10H20/8215

  characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping · CPC title

• H10H20/01335 Primary

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/835

  Reflective materials · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title