Selective passivation and selective deposition

Patent metadata

Field	Value
Publication number	US-12170197-B2
Application number	US-202117388773-A
Country	US
Kind code	B2
Filing date	Jul 29, 2021
Priority date	Feb 14, 2017
Publication date	Dec 17, 2024
Grant date	Dec 17, 2024

Abstract

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

First claim

What is claimed is:

1. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:
selectively forming a passivation layer comprising a polymer from vapor phase reactants on the first surface while leaving the second surface without the passivation layer, wherein the first surface comprises an inorganic dielectric and the second surface comprises metallic material, wherein the selectively forming comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing the passivation layer on the first surface relative to the passivation blocking layer, wherein the forming the passivation blocking layer comprises forming a self-assembled monolayer on the second surface, and wherein the forming the passivation blocking layer comprises contacting the second surface with a sulfur-containing monomer;
selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer, and
selectively removing the passivation layer from the first surface after the selectively depositing the structural layer on the second surface without removing the structural layer, wherein the passivation layer is deposited directly on the first surface, and wherein material of the first surface on which the passivation layer is directly deposited remains after the selectively removing the passivation layer.

2. The method of claim 1 , wherein the structural layer comprises a metal.

3. The method of claim 2 , further comprising selectively depositing a dielectric layer on the structural layer relative to the passivation layer.

4. The method of claim 2 , wherein the selectively forming the passivation layer is performed without catalytic agents on the first surface.

5. The method of claim 1 , wherein the selectively forming the passivation layer comprises depositing polyimide.

6. The method of claim 1 , further comprising removing the passivation blocking layer from the second surface without removing the passivation layer from the first surface and subsequently performing the selectively depositing the structural layer on the second surface relative to the passivation layer.

7. The method of claim 6 , wherein the removing the passivation blocking layer comprises heating to a temperature that removes the passivation blocking layer without removing the passivation layer.

8. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:
selectively forming a passivation layer comprising a polymer on the first surface relative to the second surface, wherein the selectively forming comprises alternately and sequentially exposing the first and second surfaces to first and second vapor phase reactants, wherein the selectively forming leaves the second surface without the passivation layer, wherein the selectively forming comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing the passivation layer on the first surface relative to the passivation blocking layer, wherein the forming the passivation blocking layer comprises forming a self-assembled monolayer on the second surface, and wherein the forming the passivation blocking layer comprises contacting the second surface with a sulfur-containing monomer;
selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer; and
selectively removing the passivation layer from the first surface after the selectively depositing the structural layer on the second surface without removing the structural layer, wherein the passivation layer is deposited directly on the first surface, and wherein material of the first surface on which the passivation layer is directly deposited remains after the selectively removing the passivation layer.

9. The method of claim 8 , wherein the first surface comprises an inorganic dielectric material and the second surface comprises a metallic material.

10. The method of claim 8 , wherein the selectively forming the passivation layer comprises selective atomic layer deposition.

11. The method of claim 8 , wherein the selectively forming the passivation layer further comprises depositing a larger amount of passivation layer on the first surface than the second surface, and wherein the selectively forming further comprises etching any polymer from the second surface while leaving at least some polymer on the first surface.

12. The method of claim 8 , wherein the structural layer overlaps with the first surface.

13. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:
selectively forming a passivation layer comprising a polymer from vapor phase reactants directly on the first surface without catalytic agents on the first surface while leaving the second surface without the passivation layer, wherein the selectively forming comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing the passivation layer on the first surface relative to the passivation blocking layer, wherein the forming the passivation blocking layer comprises forming a self-assembled monolayer on the second surface, and wherein the forming the passivation blocking layer comprises contacting the second surface with a sulfur-containing monomer;
selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer; and
selectively removing the passivation layer from the first surface without removing the structural layer after selectively depositing the structural layer, wherein material of the first surface on which the passivation layer was directly deposited remains after selectively removing the passivation layer.

14. The method of claim 13 , wherein the first surface comprises an inorganic dielectric material and the second surface comprises a metallic material.

15. The method of claim 13 , wherein the first surface comprises a metallic surface and the second surface comprise an inorganic dielectric material.

Assignees

• Asm Ip Holding Bv

Inventors

• Tois Eva E
• Haukka Suvi P
• Matero Raija H
• Färm Elina
• Longrie Delphine
• Suemori Hidemi
• Maes Jan Willem
• Tuominen Marko
• Deng Shaoren
• Raaijmakers Ivo Johannes
• Illiberi Andrea

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/202

  for lift-off processes · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title