Radiation source device

Patent metadata

Field	Value
Publication number	US-12158448-B2
Application number	US-202218050178-A
Country	US
Kind code	B2
Filing date	Oct 27, 2022
Priority date	Dec 22, 2021
Publication date	Dec 3, 2024
Grant date	Dec 3, 2024

Abstract

A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.

First claim

What is claimed is:

1. A gas sensor, comprising:
a radiation source device comprising:
a first membrane layer;
a radiation source structure configured to emit electromagnetic or infrared radiation;
a spacer structure attached to the radiation source structure; and
a second membrane layer;
wherein the first membrane layer and the second membrane layer are at least partially permeable for electromagnetic radiation,
wherein the first membrane layer, the spacer structure, and the second membrane layer form a chamber enclosing the radiation source structure, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber,
wherein the radiation source structure is arranged between the first membrane layer and the second membrane layer, and
wherein the radiation source structure comprises a perforation forming a ventilation hole between a first volume portion of the chamber enclosed between the radiation source structure and the first membrane layer and a second volume portion of the chamber enclosed between the radiation source structure and the second membrane layer;

a measurement volume having a target gas and providing an optical interaction for the electromagnetic or infrared radiation emitted by the radiation source device; and
an acoustic transducer or a direct thermal detector for providing a detector output signal based on the optical interaction with the target gas in the measurement volume.

2. The gas sensor according to claim 1 , further comprising:
a substrate, wherein the substrate comprises a semiconductor layer and an oxide layer arranged on the semiconductor layer.

3. The gas sensor according to claim 2 ,
wherein the spacer structure is located on the substrate.

4. The gas sensor according to claim 3 ,
wherein the substrate comprises an opening in an area adjacent to the second membrane layer.

5. The gas sensor according to claim 1 , wherein the spacer structure comprises an electrically non-conductive material.

6. The gas sensor according to claim 1 ,
wherein the radiation source structure is laterally supported by the spacer structure.

7. The gas sensor according to claim 1 ,
wherein the electromagnetic or infrared radiation is thermal radiation.

8. The gas sensor according to claim 1 ,
wherein the pressure in the chamber is less than 300 mbar.

9. A gas sensor, comprising:
a radiation source device comprising:
a first membrane layer;
a radiation source structure configured to emit electromagnetic or infrared radiation;
a spacer structure; and
a second membrane layer,

wherein the first membrane layer and the second membrane layer are at least partially permeable for electromagnetic radiation,
wherein the first membrane layer, the spacer structure, and the second membrane layer form a chamber enclosing the radiation source structure, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber,
wherein the radiation source structure is arranged between the first membrane layer and the second membrane layer, and
wherein the radiation source structure comprises a perforation forming a ventilation hole between a first volume portion of the chamber enclosed between the radiation source structure and the first membrane layer and a second volume portion of the chamber enclosed between the radiation source structure and the second membrane layer;

a measurement volume having a target gas and providing an optical interaction for the electromagnetic or infrared radiation emitted by the radiation source device; and
an acoustic transducer or a direct thermal detector for providing a detector output signal based on the optical interaction with the target gas in the measurement volume.

10. The gas sensor of claim 9 , further comprising:
a substrate, wherein the substrate comprises a semiconductor layer and an oxide layer arranged on the semiconductor layer.

11. The gas sensor of claim 10 ,
wherein the spacer structure is located on the substrate.

12. The gas sensor of claim 11 ,
wherein the substrate comprises an opening in an area adjacent to the second membrane layer.

13. The gas sensor of claim 9 ,
wherein the spacer structure comprises an electrically non-conductive material.

14. The gas sensor of claim 9 ,
wherein the radiation source structure is laterally supported by the spacer structure.

15. The gas sensor of claim 9 , wherein the pressure in the chamber is less than 300 mbar.

16. A method of operating a gas sensor, comprising: a radiation source device comprising: a first membrane layer, a radiation source structure configured to emit electromagnetic or infrared radiation, a spacer structure, and a second membrane layer, wherein the first membrane layer and the second membrane layer are at least partially permeable for electromagnetic radiation, wherein the first membrane layer, the spacer structure, and the second membrane layer form a chamber enclosing the radiation source structure, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, wherein the radiation source structure is arranged between the first membrane layer and the second membrane layer, and wherein the radiation source structure comprises a perforation forming a ventilation hole between a first volume portion of the chamber enclosed between the radiation source structure and the first membrane layer and a second volume portion of the chamber enclosed between the radiation source structure and the second membrane layer; a measurement volume having a target gas and providing an optical interaction for the electromagnetic or infrared radiation emitted by the radiation source device; and an acoustic transducer or a direct thermal detector for providing a detector output signal based on the optical interaction with the target gas in the measurement volume, the method comprising:
emitting, by the radiation source structure, the electromagnetic or infrared radiation.

17. The method of claim 16 , further comprising providing, by the acoustic transducer or the direct thermal detector, the detector output signal based on the optical interaction with the target gas in the measurement volume.

18. The method of claim 16 , wherein the gas sensor further comprises a substrate, wherein the substrate comprises a semiconductor layer and an oxide layer arranged on the semiconductor layer.

19. The method of claim 18 , wherein the spacer structure is located on the substrate.

20. The method of claim 16 , wherein the pressure in the chamber is less than 300 mbar.

Assignees

• Infineon Technologies Ag

Inventors

• Debie Derek
• Elian Klaus
• Heitzer Ludwig
• Tumpold David
• Pohl Jens
• Ghahremani Cyrus
• Meyer Thorsten
• Geissler Christian
• Allmeier Andreas

Classifications

• G01N2291/021

  Gases · CPC title

• G01N29/2425

  optoacoustic fluid cells therefor · CPC title

• G01N29/02

  Analysing fluids (using acoustic emission techniques G01N29/14 {; constructional or flow details for analysing fluids G01N29/222; optoacoustic fluid cells G01N29/2425}) · CPC title

• G01N25/00

  Investigating or analyzing materials by the use of thermal means (G01N3/00 - G01N23/00 take precedence) · CPC title

• G01N2021/1704

  in gases · CPC title