Method of fabricating a semiconductor package
US-2019067235-A1 · Feb 28, 2019 · US
US12157189B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12157189-B2 |
| Application number | US-202017605844-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 25, 2020 |
| Priority date | Apr 22, 2019 |
| Publication date | Dec 3, 2024 |
| Grant date | Dec 3, 2024 |
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Provided is a joint structure. The joint structure includes a first structure, and a second structure joined to the first structure via a joint portion formed of a Au—Sn-based alloy, wherein a thickness of the joint portion is 3 μm or more and 50 μm or less.
Opening claim text (preview).
The invention claimed is: 1. A joint structure comprising: a first structure; and a second structure joined to the first structure via a joint portion formed of a Au—Sn-based alloy, wherein a thickness of the joint portion is 3 μm or more and 50 μm or less, the joint portion contains: Sn of 19 mass % or more and 25 mass % or less; a balance containing Au as a main component; and any one element of Fe, Cr, and Ni, a concentration of Fe in a case of containing Fe is 0.1 ppm by mass or more and 10 ppm by mass or less, a concentration of Cr in a case of containing Cr is 0.1 ppm by mass or more and 100 ppm by mass or less, and a concentration of Ni in a case of containing Ni is 1 ppm by mass or more and 5,000 ppm by mass or less, with respect to the entire joint portion. 2. A joint structure comprising: a first structure; and a second structure joined to the first structure via a joint portion formed of a Au—Sn-based alloy, wherein a thickness of the joint portion is 3 μm or more and 50 μm or less, wherein the joint portion contains: Sn of 19 mass % or more and 25 mass % or less; a balance containing Au as a main component; and a combination of at least two or more elements selected from Fe, Cr, and Ni, a total concentration of the combination of the elements with respect to the entire joint portion is more than 0.1 ppm by mass and 5,000 ppm by mass or less, a concentration of Fe in a case of containing Fe is 0.1 ppm by mass or more and 10 ppm by mass or less, a concentration of Cr in a case of containing Cr is 0.1 ppm by mass or more and 100 ppm by mass or less, and a concentration of Ni is in a range of 0 ppm by mass or more and 4,990 ppm by mass or less. 3. A method for manufacturing a joint structure, the joint structure including: a first structure; and a second structure joined to the first structure via a joint portion formed of a Au—Sn-based alloy, the method comprising: a ball fixing step of fixing a solder ball formed of the Au—Sn-based alloy to a first joint surface of the first structure; and a step of turning over the first structure with respect to the second structure with the first joint surface facing the second joint surface of the second structure to electrically connect the first joint surface and the second joint surface, wherein a thickness of the joint portion is 3 μm or more and 50 μm or less. 4. The method for manufacturing a joint structure according to claim 3 , wherein the ball fixing step includes a multiple fixing step of fixing the solder ball to the first joint surface with a plurality of the solder balls stacked in a height direction. 5. The method for manufacturing a joint structure according to claim 3 , wherein in the ball fixing step, the solder ball is fixed to the first joint surface in a close-packed manner. 6. The method for manufacturing a joint structure according to claim 3 , wherein when a diameter of the solder ball is R 1 and a thickness of the joint portion is t, the solder ball is disposed on the first joint surface at an interval L represented by the following equation (1) in the ball fixing step: L =√(2 R 1 3 /3 t ) (1) 7. The method for manufacturing a joint structure according to claim 3 , wherein the solder ball contains: Sn of 19 mass % or more and 25 mass % or less; a balance containing Au as a main component; and any one element of Fe, Cr, and Ni, a concentration of Fe in a case of containing Fe is 0.1 ppm by mass or more and 10 ppm by mass or less, a concentration of Cr in a case of containing Cr is 0.1 ppm by mass or more and 100 ppm by mass or less, and a concentration of Ni in a case of containing Ni is 1 ppm by mass or more and 5,000 ppm by mass or less, with respect to the entire solder ball. 8. The method for manufacturing a joint structure according to claim 3 , wherein the solder ball contains: Sn of 19 mass % or more and 25 mass % or less; a balance containing Au as a main component; and a combination of at least two or more elements selected from Fe, Cr, and Ni, a total concentration of the combination of the elements is more than 0.1 ppm by mass and 5,000 ppm by mass or less with respect to the entire solder ball, a concentration of Fe in a case of containing Fe is 0.1 ppm by mass or more and 10 ppm by mass or less, a concentration of Cr in a case of containing Cr is 0.1 ppm by mass or more and 100 ppm by mass or less, and a concentration of Ni is in a range of 0 ppm by mass or more and 4,990 ppm by mass or less. 9. The method for manufacturing a joint structure according to claim 5 , wherein the solder ball contains Sn of 19 mass % or more and 25 mass % or less and a balance containing Au as a main component, a central cross section of the solder ball includes a lamellar structure composed of a first phase mainly composed of Au 5 Sn and a second phase mainly composed of AuSn, and in four frames having a square shape and evenly disposed in a circumferential direction of the solder ball, the frame having, as a diagonal line, a line segment having a length of 5 μm from a position where a line passing through a center of the solder ball and parallel to the central cross section intersects with an outer edge of the solder ball toward the center, an average number of the first phases being massive and having longitudinal and lateral lengths two times or more an interval between the first phase and the second phase is three or less. 10. A solder ball comprising: Sn of 19 mass % or more and 25 mass % or less; and a balance containing Au as a main component, wherein the solder ball contains any one element of Fe, Cr, and Ni, a concentration of Fe in a case of containing Fe is 0.1 ppm by mass or more and 10 ppm by mass or less, a concentration of Cr in a case of containing Cr is 0.1 ppm by mass or more and 100 ppm by mass or less, and a concentration of Ni in a case of containing Ni is 1 ppm by mass or more and 5,000 ppm by mass or less, with respect to the entire solder ball. 11. A solder ball comprising: Sn of 19 mass % or more and 25 mass % or less; and a balance containing Au as a main component, wherein the solder ball contains a combination of at least two or more elements selected from Fe, Cr, and Ni, a total concentration of a combination of the elements is more than 0.1 ppm by mass and 5,000 ppm by mass or less with respect to the entire solder ball, a concentration of Fe in a case of containing Fe is 0.1 ppm by mass or more and 10 ppm by mass or less, a concentration of Cr in a case of containing Cr is 0.1 ppm by mass or more and 100 ppm by mass or less, and a concentration of Ni is in a range of 0 ppm by mass or more and 4,990 ppm by mass or less. 12. The solder ball according to claim 10 , wherein the concentration of Fe is 0.1 ppm by mass or more and 5 ppm by mass or less. 13. The solder ball according to claim 10 , wherein the concentration of Ni is 20 ppm by mass or more and 50 ppm by mass or less. 14. The solder ball according to claim 10 , wherein the concentration of Ni is 1,000 ppm by mass or more and 3,800 ppm by mass or less. 15. The solder ball according to claim 10 , wherein the concentration of Ni is 1,300 ppm by mass or more and 2,500 ppm by mass or less. 16. A solder ball comprising: Sn of 19 mass % or more and 25 mass % or less; and a balance containing Au as a main component, wherein a central cross section of the solder ball includes a lamellar structure composed of a first phase mainly composed of Au 5 Sn and a second phase mainly composed of AuSn, and in four frames having a square shape and evenly disposed in a circumfer
Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title
of interconnections · CPC title
Powders, particles or spheres; Preforms made therefrom · CPC title
Semiconductor devices · CPC title
Au as the principal constituent · CPC title
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