Multilayer body and crystalline body

Patent metadata

Field	Value
Publication number	US-12156471-B2
Application number	US-202117349730-A
Country	US
Kind code	B2
Filing date	Jun 16, 2021
Priority date	Feb 28, 2019
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.

First claim

What is claimed is:

1. A multilayer body, comprising:
a first phononic crystal layer; and
a second phononic crystal layer disposed on or above the first phononic crystal layer,
wherein the first phononic crystal layer has a first phononic crystal structure including a plurality of first through holes, which are regularly arranged,
wherein the second phononic crystal layer has a second phononic crystal structure including a plurality of second through holes, which are regularly arranged,
wherein a through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to a through direction of the plurality of second through holes in the second phononic crystal layer,
wherein the first phononic crystal structure includes a first domain and a second domain that are phononic crystal regions,
wherein the first domain includes some of the plurality of first through holes that are regularly arranged in a first direction in a cross section perpendicular to the through direction of the first through holes,
wherein the second domain includes some of the plurality of first through holes that are regularly arranged in a second direction different from the first direction in the cross section perpendicular to the through direction of the plurality of first through holes,
wherein the second phononic crystal structure includes a third domain and a fourth domain that are phononic crystal regions,
wherein the third domain includes some of the plurality of second through holes that are regularly arranged in a third direction in a cross section perpendicular to the through direction of the plurality of second through holes, and
wherein the fourth domain includes some of the plurality of second through holes that are regularly arranged in a fourth direction different from the third direction in the cross section perpendicular to the through direction of the plurality of second through holes.

2. The multilayer body according to claim 1 , wherein the first phononic crystal layer is in contact with the second phononic crystal layer.

3. The multilayer body according to claim 1 , wherein at least part of the plurality of second through holes are not in communication with the plurality of first through holes.

4. The multilayer body according to claim 1 , wherein the first phononic crystal layer and the second phononic crystal layer are each formed of a semiconductor material.

5. The multilayer body according to claim 1 ,
wherein the first phononic crystal structure includes a fifth domain that is a phononic crystal region,
wherein the second phononic crystal structure includes a sixth domain that is a phononic crystal region,
wherein the fifth domain and the sixth domain overlap each other in the through direction of the plurality of first through holes or the plurality of second through holes, and
wherein a period of the arrangement of the plurality of first through holes in the fifth domain differs from a period of the arrangement of the plurality of second through holes in the sixth domain.

6. The multilayer body according to claim 1 , wherein the first phononic crystal structure includes a fifth domain that is a phononic crystal region,
wherein the second phononic crystal structure includes a sixth domain that is a phononic crystal region,
wherein the fifth domain and the sixth domain overlap each other in the through direction of the plurality of first through holes or the plurality of second through holes, and
wherein a diameter of the plurality of first through holes in the fifth domain differs from a diameter of the plurality of second through holes in the sixth domain.

7. The multilayer body according to claim 1 ,
wherein the first phononic crystal structure includes a fifth domain that is a phononic crystal region,
wherein the second phononic crystal structure includes a sixth domain that is a phononic crystal region,
wherein the fifth domain and the sixth domain overlap each other in the through direction of the plurality of first through holes or the plurality of second through holes, and
wherein a type of unit cell including some of the plurality of first through holes in the fifth domain differs from a type of unit cell including some of the plurality of second through holes in the sixth domain.

8. The multilayer body according to claim 1 , further comprising a buffer layer disposed between the first phononic crystal layer and the second phononic crystal layer,
wherein the buffer layer is formed of the same material as the material of the first phononic crystal layer and the second phononic crystal layer.

9. A multilayer body, comprising:
a first phononic crystal layer;
a second phononic crystal layer stacked on or above the first phononic crystal layer in a stacking direction; and
a plurality of pillars, wherein:
the first phononic crystal layer has a first phononic crystal structure including a plurality of first through holes, which are regularly arranged,
the second phononic crystal layer has a second phononic crystal structure including a plurality of second through holes, which are regularly arranged,
a through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to a through direction of the plurality of second through holes in the second phononic crystal layer and substantially parallel to the stacking direction,
the plurality of pillars are columnar bodies extending linearly,
each of the plurality of pillars is filled into a corresponding one of the plurality of first through holes in the first phononic crystal layer and/or the plurality of second through holes in the second phononic crystal layer,
the plurality of pillars and the first phononic crystal layer and/or the second phononic crystal layer with the plurality of pillars filled thereinto are formed of the same material, and
a circumferential surface of each of the plurality of pillars is covered with an oxide film.

10. The multilayer body according to claim 9 , wherein each of the plurality of pillars has been filled into a corresponding one of the plurality of first through holes and the plurality of second through holes.

11. The multilayer body according to claim 9 , wherein the plurality of pillars are formed of a semiconductor material.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Fujikane Masaki
• Tambo Naoki
• Nakamura Kunihiko
• Takahashi Kouhei
• Naito Yasuyuki

Classifications

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H10D62/53

  the imperfections being within the semiconductor body · CPC title

• H10N10/17

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title

• H10N10/857 Primary

  comprising compositions changing continuously or discontinuously inside the material · CPC title

• C01B33/02

  Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title