Current sensor

Patent metadata

Field	Value
Publication number	US-12153071-B2
Application number	US-202318395663-A
Country	US
Kind code	B2
Filing date	Dec 25, 2023
Priority date	Oct 24, 2022
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

A current sensor is configured by at least one magnetoelectric conversion element, a conductor, and a signal processing IC being encapsulated by an encapsulating portion. The current sensor includes a pair of first lead terminals that is partially exposed outside of the encapsulating portion, is electrically connected to the conductor, inputs the measurement current to the conductor, and outputs the measurement current from the conductor; a metal member that is partially exposed outside the encapsulating portion and is spaced apart from the conductor; and a supporting portion that supports the at least one magnetoelectric conversion element, the signal processing IC, and the metal member on a first surface, is separated from the conductor, and is separate from the metal member.

First claim

What is claimed is:

1. A current sensor, comprising:
at least one magnetoelectric conversion element;
a conductor that at least partially surrounds the at least one magnetoelectric conversion element in a plan view and through which a measurement current to be measured by the at least one magnetoelectric conversion element flows;
a signal processing IC that processes a signal that is output from the at least one magnetoelectric conversion element;
an encapsulating portion that encapsulates the at least one magnetoelectric conversion element, the conductor, and the signal processing IC;
a pair of first lead terminals that is partially exposed outside of the encapsulating portion, is electrically connected to the conductor, inputs the measurement current to the conductor, and outputs the measurement current from the conductor;
a metal member that is partially exposed outside of the encapsulating portion and is spaced apart from the conductor;
a supporting portion that supports the at least one magnetoelectric conversion element, the signal processing IC, and the metal member on a first surface, is spaced apart from the conductor, and is separate from the metal member; and
a plurality of second lead terminals that is partially exposed outside of the encapsulating portion, wherein at least one of the plurality of second lead terminals is electrically connected to the signal processing IC, wherein
the metal member is at least one second lead terminal among the plurality of second lead terminals, and
the metal member and the conductor do not overlap with the signal processing IC in the plan view,
the pair of first lead terminals and the plurality of second lead terminals are arranged opposing each other, via the signal processing IC, in a first direction orthogonal to a thickness direction of the signal processing IC, and
the supporting portion is configured by an insulator or a semiconductor.

2. The current sensor according to claim 1 , wherein
the metal member includes a first metal member that is one second lead terminal among the plurality of second lead terminals, and a second metal member that is separate from the plurality of second lead terminals.

3. The current sensor according to claim 1 , wherein
the metal member includes a first metal member and a second metal member,
the first metal member and the second metal member are spaced apart in a second direction that is orthogonal to the thickness direction of the signal processing IC and the first direction, and
among two end portions of the supporting portion opposing each other in the second direction, one end portion of the supporting portion supports the first metal member and another end portion of the supporting portion supports the second metal member.

4. The current sensor according to claim 3 , wherein
the first metal member is one second lead terminal among the plurality of second lead terminals, and
the second metal member is one second lead terminal among the plurality of second lead terminals.

5. The current sensor according to claim 1 , wherein
the supporting portion includes a through hole.

6. The current sensor according to claim 1 , wherein
the conductor includes a stepped portion such that the first surface of the supporting portion is spaced apart in a thickness direction of the conductor from a surface of the conductor opposing the first surface.

7. The current sensor according to claim 1 , wherein
a Young's modulus of the supporting portion is 100 GPa or less, a thickness of the supporting portion is less than 0.1 mm, or a coefficient of thermal expansion of the supporting portion is 10×10 −6 /K or less.

8. The current sensor according to claim 1 , wherein
the supporting portion is configured by a polymeric material or alternatively 90% or more of a material of the supporting portion is configured by silicon or germanium.

9. The current sensor according to claim 1 , wherein
when viewed from the first direction orthogonal to the thickness direction of the signal processing IC, a surface that is opposite to a surface of the signal processing IC that is supported by the first surface of the supporting portion does not protrude 0.15 mm or more from a surface of the conductor on a side identical to the first surface.

10. The current sensor according to claim 1 , wherein the supporting portion includes:
an IC supporting portion that supports the signal processing IC and the metal member on the first surface; and
an element supporting portion that is separate from the IC supporting portion and supports the at least one magnetoelectric conversion element and the metal member on the first surface.

11. The current sensor according to claim 10 , wherein
a width of the element supporting portion in the first direction is 0.4 mm or more.

12. The current sensor according to claim 10 , wherein
the IC supporting portion and the element supporting portion are spaced apart in the first direction.

13. The current sensor according to claim 1 , wherein
a width of the supporting portion in the first direction is 0.4 mm or more.

Assignees

• Asahi Kasei Microdevices Corp

Inventors

• Tsujimoto Masaki
• Ishida Takuya

Classifications

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• G01R19/0092

  Measuring current only · CPC title

• G01R15/20 Primary

  using galvano-magnetic devices, e.g. Hall-effect devices {, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices} · CPC title

• G01R15/207 Primary

  Constructional details independent of the type of device used · CPC title