Transfer length phase change material (PCM) based bridge cell

Patent metadata

Field	Value
Publication number	US-12150392-B2
Application number	US-202017130068-A
Country	US
Kind code	B2
Filing date	Dec 22, 2020
Priority date	Dec 22, 2020
Publication date	Nov 19, 2024
Grant date	Nov 19, 2024

Abstract

A tunable nonvolatile resistive element, wherein the device conductance is modulated by changing the length of a contact between a phase change material and a resistive liner. By choosing the contact length to be less than the transfer length a linear modulation of the conductance is obtained.

First claim

What is claimed is:

1. A neuromorphic device comprising:
a phase change material (PCM) bar, with the phase change material bar being structured and configured to have at least two portions, a first narrow portion and a second narrow portion, that are joined by the first narrow portion, and with the first narrow portion being located at the center of the phase change material bar and the second narrow portion being located at the end of the PCM bar, wherein the PCM bar is encapsulated and wherein the PCM bar includes at least a first crystalline-phase portion and at least a first amorphous-phase portion;
a resistive liner located adjacent the phase change material bar, with the resistive liner being a conduit for conducting at least a portion of a first electric current, wherein the resistive liner includes an insulator region located at each end of the resistive liner and wherein the insulator region limits the resistive liner span on each side to one transfer length and wherein the one transfer length is measured from the second narrow portion end of the PCM bar to the start of the insulation region
and wherein resistance of the resistive liner is equal to resistance of the first crystalline-phase portion of the PCM bar but lower than the first amorphous-phase portion of the PCM bar;
an interfacial layer located between the resistive liner and the phase change material bar, with the interfacial layer having a tunable contact resistance, based on composition and thickness of the interfacial layer; and
a set of ohmic contact portions, with at least one ohmic contact of the set of ohmic contact portions being located at each end of the phase change material bar.

2. The neuromorphic device of claim 1 wherein the contact length is measured from the end of an amorphous-phase portion of the phase change material bar to a first end of the insulator region.

3. The neuromorphic device of claim 1 wherein at least the first crystalline-phase portion is located at a first portion of the phase change material bar.

4. The neuromorphic device of claim 1 wherein the amorphous-phase portion is initially formed at the first narrow portion of the phase change material bar.

5. The neuromorphic device of claim 1 wherein the contact length is adjusted by modulating the amorphous-phase portion of the phase change material bar.

6. The neuromorphic device of claim 1 wherein resistance of the neuromorphic device is based on a first contact length between the first crystalline-phase portion of the phase change material bar and the resistive liner.

7. The neuromorphic device of claim 1 wherein resistance drift is reduced based on conducting the first electric current from the crystalline-phase portion of the phase change material bar through the resistive liner during a read operation.

8. The neuromorphic device of claim 6 wherein the resistance of the neuromorphic device is increased by decreasing the first contact length.

9. The neuromorphic device of claim 6 wherein the resistance of the neuromorphic device is decreased by increasing the first contact length.

10. The neuromorphic device of claim 1 wherein the resistance of the first amorphous-phase portion of the phase change material bar allows a maximum of one percent (1%) of the first electric current to flow through the first amorphous-phase portion.

11. The neuromorphic device of claim 1 wherein the electronic conductance between the set of the ohmic contacts is proportional to a length of contact between the crystalline-phase portion and the resistive liner when the length of contact is less than the length of one transfer length.

12. The neuromorphic device of claim 1 , wherein the phase change material bar is comprised of at least one of Ge 2 Sb 2 Te 5 , Sb 2 Te 3 , and GeTe.

13. The neuromorphic device of claim 1 , wherein the resistive liner is comprised of at least one of TaN, amorphous carbon, TiN.

14. The neuromorphic device of claim 1 , wherein the interfacial layer is comprised of at least one of Si 3 N 4 , HfO 2 , Al 2 O 3 , SiO 2 , TiO 2 and TaNO.

Assignees

• IBM

Inventors

• Cohen Guy M
• Ando Takashi
• Gong Nanbo

Classifications

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/011

  Manufacture or treatment of multistable switching devices · CPC title

• H10N70/823

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title