Photocurable composition and method for producing semiconductor device

Patent metadata

Field	Value
Publication number	US-12147158-B2
Application number	US-202318128503-A
Country	US
Kind code	B2
Filing date	Mar 30, 2023
Priority date	Aug 8, 2016
Publication date	Nov 19, 2024
Grant date	Nov 19, 2024

Abstract

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

First claim

The invention claimed is:

1. A photocurable composition comprising
at least one compound having a structure including at least one structure selected from the group consisting of a photodegradable nitrogen-containing structure, a photodegradable sulfur-containing structure, and a combination thereof,
wherein the photodegradable nitrogen-containing structure is a photodegradable nitrogen-containing structure optionally having a sulfur atom, the photodegradable nitrogen-containing structure including a tetrazole structure, a triazole structure, an imidazole structure, an azole structure, a diazo structure, or a combination of these photodegradable nitrogen-containing structures,
wherein the photodegradable sulfur-containing structure is a photodegradable sulfur-containing structure optionally having a nitrogen atom, the photodegradable sulfur-containing structure including a trisulfide structure, a disulfide structure, a thioketone structure, a thiophene structure, a thiol structure, or a combination of these photodegradable sulfur-containing structures,

the photocurable composition also including a hydrocarbon structure, wherein the hydrocarbon structure is in the structure of the at least one compound or is in a separate compound included in the photocurable composition, and
a solvent,
wherein the at least one compound is a compound obtained by an addition reaction of a carboxylic acid (carboxyl-group)-containing compound, a hydroxyl group-containing compound, an amine (amino-group)-containing compound, or a thiol group-containing compound with an epoxy compound.

2. The photocurable composition according to claim 1 , wherein the at least one compound is a compound having the combination of the photodegradable nitrogen-containing structure and the photodegradable sulfur-containing structure in the structure of one molecule of the at least one compound.

3. The photocurable composition according to claim 1 , wherein the at least one compound is a compound having the combination of the photodegradable nitrogen-containing structure and the photodegradable sulfur-containing structure, and the hydrocarbon structure, in the structure of one molecule of the at least one compound.

4. The photocurable composition according to claim 1 , wherein the hydrocarbon structure is a saturated or unsaturated, linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

5. The photocurable composition according to claim 1 , wherein a content of the at least one compound is 30 to 100% by mass relative to the mass of solid content of the photocurable composition.

6. A method for producing a coated substrate comprising steps of:
(i) applying the photocurable composition according to claim 1 to a substrate; and
(ii) exposing the applied photocurable composition to light.

7. The method according to claim 6 , comprising, after the step (i), a step (ia) of heating the applied photocurable composition at 70 to 400° C. for 10 seconds to 5 minutes.

8. The method according to claim 6 , wherein the exposure light in the step (ii) has a wavelength of 150 nm to 248 nm.

9. The method according to claim 6 , wherein an exposure dose of the exposure light in the step (ii) is 10 mJ/cm 2 to 3,000 mJ/cm 2 .

10. The method according to claim 6 , wherein the semiconductor substrate has an open area (unpatterned area) and a patterned area of dense (DENCE) and crude (ISO) patterns, and an aspect ratio of the patterns is 0.1 to 10.

11. A method for producing a semiconductor device comprising steps of:
applying the photocurable composition according to claim 1 to a semiconductor substrate, followed by exposure to light, to form an underlayer film;
forming a resist film on the underlayer film;
irradiating the resist film with light or an electron beam, followed by development, to form a resist pattern;
etching the underlayer film through the resist pattern; and
processing the semiconductor substrate through the patterned underlayer film.

12. A method for producing a semiconductor device comprising steps of:
applying the photocurable composition according to claim 1 to a semiconductor substrate, followed by exposure to light, to form an underlayer film;
forming a hard mask on the underlayer film;
forming a resist film on the hard mask;
irradiating the resist film with light or an electron beam, followed by development, to form a resist pattern;
etching the hard mask through the resist pattern;
etching the underlayer film through the patterned hard mask; and
processing the semiconductor substrate through the patterned underlayer film.

Assignees

• Nissan Chemical Corp

Inventors

• Tokunaga Hikaru
• Endo Takafumi
• Hashimoto Keisuke
• Sakamoto Rikimaru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/0275

  with dithiol or polysulfide compounds · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• C08L63/00

  Compositions of epoxy resins; Compositions of derivatives of epoxy resins · CPC title

• C08G59/1483

  containing sulfur · CPC title