Photocurable composition and method for producing semiconductor device

Patent metadata

Field	Value
Publication number	US-11681223-B2
Application number	US-201716324483-A
Country	US
Kind code	B2
Filing date	Jul 31, 2017
Priority date	Aug 8, 2016
Publication date	Jun 20, 2023
Grant date	Jun 20, 2023

Abstract

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40. The nitrogen-containing structure contains a reactive nitrogen-containing functional group or reactive carbon-containing functional group produced by irradiation with ultraviolet light; and the sulfur-containing structure contains an organic sulfur radical or carbon radical produced by irradiation with ultraviolet light.

First claim

The invention claimed is:

1. A photocurable composition comprising at least one compound selected from the group consisting of:

and combinations thereof,
the photocurable composition also including a hydrocarbon structure, wherein the hydrocarbon structure is in the structure of the at least one compound and/or is in a separate compound included in the photocurable composition, and
a solvent.

2. The photocurable composition according to claim 1 , wherein the hydrocarbon structure is a saturated or unsaturated, linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

3. The photocurable composition according to claim 1 , wherein a content of the at least one compound is 30 to 100% by mass relative to the mass of solid content of the photocurable composition.

4. A method for producing a coated substrate comprising steps of:
(i) applying the photocurable composition according to claim 1 to a substrate; and
(ii) exposing the applied photocurable composition to light.

5. The method according to claim 4 , comprising, after the step (i), a step (ia) of heating the applied photocurable composition at 70 to 400° C. for 10 seconds to 5 minutes.

6. The method according to claim 4 , wherein the exposure light in the step (ii) has a wavelength of 150 nm to 248 nm.

7. The method according to claim 4 , wherein an exposure dose of the exposure light in the step (ii) is 10 mJ/cm 2 to 3,000 mJ/cm2.

8. The method according to claim 4 , wherein the semiconductor substrate has an open area (unpatterned area) and a patterned area of dense (DENCE) and crude (ISO) patterns, and an aspect ratio of the patterns is 0.1 to 10.

9. A method for producing a semiconductor device comprising steps of:
applying the photocurable composition according to claim 1 to a semiconductor substrate, followed by exposure to light, to form an underlayer film;
forming a resist film on the underlayer film;
irradiating the resist film with light or an electron beam, followed by development, to form a resist pattern;
etching the underlayer film through the resist pattern; and
processing the semiconductor substrate through the patterned underlayer film.

10. A method for producing a semiconductor device comprising steps of:
applying the photocurable composition according to claim 1 to a semiconductor substrate, followed by exposure to light, to form an underlayer film;
forming a hard mask on the underlayer film;
forming a resist film on the hard mask;
irradiating the resist film with light or an electron beam, followed by development, to form a resist pattern;
etching the hard mask through the resist pattern;
etching the underlayer film through the patterned hard mask; and
processing the semiconductor substrate through the patterned underlayer film.

Assignees

• Nissan Chemical Corp

Inventors

• Tokunaga Hikaru
• Endo Takafumi
• Hashimoto Keisuke
• Sakamoto Rikimaru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• C08L63/00

  Compositions of epoxy resins; Compositions of derivatives of epoxy resins · CPC title

• G03F7/008 Primary

  Azides (G03F7/075 takes precedence) · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title