Light detector, light detection system, LIDAR device, and mobile body

Patent metadata

Field	Value
Publication number	US-12142616-B2
Application number	US-202217680184-A
Country	US
Kind code	B2
Filing date	Feb 24, 2022
Priority date	Apr 28, 2021
Publication date	Nov 12, 2024
Grant date	Nov 12, 2024

Abstract

According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.

First claim

What is claimed is:

1. A light detector, comprising:
a plurality of elements located in a cell region and arranged along a first direction and a second direction, the second direction crossing the first direction, each of the elements including
a first semiconductor region of a first conductivity type,
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of the first conductivity type and including a higher first-conductivity-type impurity concentration than the first semiconductor region, and
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of a second conductivity type;

a plurality of separation parts located respectively around the elements in a first plane parallel to the first and second directions;
a fourth semiconductor region located around each of the separation parts in the first plane, the fourth semiconductor region being of the first conductivity type;
a fifth semiconductor region located on the fourth semiconductor region, the fifth semiconductor region being of the second conductivity type;
a first interconnect electrically connected to at least a portion of the third semiconductor regions;
a first quenching part electrically connected to the first interconnect; and
a second interconnect electrically connected to the fifth semiconductor region at a periphery of the cell region.

2. The detector according to claim 1 , further comprising:
an insulating layer located on the elements, the separation parts, and the fifth semiconductor region; and
a plurality of lenses located on the insulating layer and positioned respectively on the elements.

3. The detector according to claim 1 , wherein
the second semiconductor region and the third semiconductor region of one of the elements are separated from one of the separation parts located around the one of the elements.

4. The detector according to claim 1 , further comprising:
an electrode; and
a semiconductor layer located on the electrode, the semiconductor layer being of the first conductivity type,
the elements, the separation parts, and the fourth semiconductor region being located on the semiconductor layer.

5. The detector according to claim 4 , wherein
a lower end of at least one of the separation parts contacts the semiconductor layer.

6. The detector according to claim 1 , wherein
at least one of the separation parts is a rounded quadrilateral or a polygon of at least five sides when viewed along a third direction perpendicular to the first and second directions.

7. The detector according to claim 1 , wherein
at least one of the separation parts is an octagon when viewed along a third direction perpendicular to the first and second directions.

8. The detector according to claim 1 , further comprising:
a first pad electrically connected to the first interconnect; and
a second pad separated from the first pad and electrically connected to the second interconnect.

9. The detector according to claim 1 , further comprising:
a second quenching part electrically connected to the second interconnect.

10. The detector according to claim 1 , wherein
a first-conductivity-type impurity concentration in the fourth semiconductor region is less than the first-conductivity-type impurity concentration in the second semiconductor region.

11. The detector according to claim 1 , wherein
at least one of the elements is an avalanche photodiode.

12. The detector according to claim 1 , wherein
at least one of the elements operates in a Geiger mode.

13. A light detection system, comprising:
the light detector according to claim 1 ; and
a distance measuring circuit calculating a time-of-flight of light by using an output signal of the light detector.

14. A lidar device, comprising:
a light source irradiating light on an object; and
the light detection system according to claim 13 detecting light reflected by the object.

15. The device according to claim 14 , further comprising:
an image recognition system generating a three-dimensional image based on an arrangement relationship of the light source and the light detector.

16. A mobile body, comprising:
the lidar device according to claim 14 .

Assignees

• Toshiba Kk

Inventors

• Shimizu Mariko
• Fujiwara Ikuo
• Sasaki Keita
• Okamoto Kazuaki
• Kwon Honam
• Suzuki Kazuhiro

Classifications

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/184

  Infrared image sensors · CPC title

• H10F39/024

  of coatings or optical elements · CPC title

• H10F39/802 Primary

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title