Process for preparing chlorosilanes

US12129177B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12129177-B2
Application numberUS-201817309795-A
CountryUS
Kind codeB2
Filing dateDec 18, 2018
Priority dateDec 18, 2018
Publication dateOct 29, 2024
Grant dateOct 29, 2024

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reaction of a hydrogen and silicon tetrachloride-containing reaction gas with a particulate contact mass containing silicon and a catalyst. The chlorosilanes have the general formula H n SiCl 4-n and/or H m Cl 6-m Si 2 . The reactor design is described by an index K1, the constitution of the contact mass is described by an index K2 and the reaction conditions are described by an index K3.

First claim

Opening claim text (preview).

The invention claimed is: 1. A process for producing chlorosilanes in a fluidized bed reactor, comprising: reacting a hydrogen and silicon tetrachloride-containing reaction gas with a particulate contact mass containing silicon and a catalyst, wherein the chlorosilanes have the general formula H n SiCl 4-n and/or H m Cl 6-m Si 2 where n=1-3 and m=0-4, and wherein the reactor design is described by an index K ⁢ 1 = φ · V reactor , eff A tot , cooled · d hyd ; wherein φ is a fill level of the reactor; wherein V reactor, eff is an effective volume of the reactor [m 3 ]; wherein A tot, cooled is a sum of cooled surface areas in the reactor [m 2 ]; wherein d hyd is a hydraulic reactor diameter [m]; and wherein V reactor, eff is 1 to 300 m 3 ; and wherein d hyd is 0.5 to 2.5 m; wherein the constitution of the contact mass is described by an index K ⁢ 2 = R S ⁢ i · B A ⁢ K · δ r ⁢ e ⁢ l d 3 ⁢ 2 ; wherein B AK is a breadth of the particle size distribution of the contact mass [μm]; wherein d 32 is a particle Sauter diameter [μm]; wherein R Si is a purity of the silicon; wherein δ rel is a relative catalyst distribution in the contact mass; wherein δ rel is 0.001 to 7; wherein d 32 is 10 to 2000 μm; wherein B AK is 10 to 1500 μm; and wherein R Si is 0.75 to 0.99999; wherein the reaction conditions are described by an index K ⁢ 3 = u L v F · 10 6 · p diff g · 1 ρ F ; wherein u L is a superficial gas velocity [m/s]; wherein v F is a kinematic viscosity of a gaseous reaction mixture within an interior of the reactor [m 2 /s]; wherein ρ F is a fluid density [kg/m 3 ]; wherein p diff is a pressure drop over fluidized bed [kg/m*s 2 ]; wherein g is an acceleration due to gravity [m/s 2 ]; wherein p diff is 10 000 to 200 000 kg/m*s 2 ; wherein u L is 0.05 to 2 m/s; wherein ρ F is 2 to 20 kg/m 3 ; wherein v F is 3*10 −7 to 5.4*10 −6 m 2 /s; and wherein K1 has a value of 2 to 20, wherein K2 has a value of 0.001 to 200 and wherein K3 has a value of 0.5 to 10 000. 2. The process of claim 1 , wherein K1 has a value of 3 to 18. 3. The process of claim 1 , wherein K2 has a value of 0.005 to 100. 4. The process of claim 1 , wherein K3 has a value of 0.5 to 10,000. 5. The process of claim 1 , wherein the effective reactor volume V reactor, eff is 5 to 200 m 3 . 6. The process of claim 1 , wherein the hydraulic plant diameter d hyd is 0.75 to 2 m. 7. The process of claim 1 , wherein the pressure drop over the fluidized bed p diff is 30,000 to 150,000 kg/m*s 2 . 8. The process of claim 1 , wherein the particle Sauter diameter d 32 is 50 to 1500 μm. 9. The process of claim 1 , wherein the breadth of the particle size distribution of the contact mass B AK is 100 to 1000 μm. 10. The process of claim 1 , wherein the relative catalyst distribution in the contact mass δ rel is 0.005 to 5. 11. The process of claim 1 , wherein the catalyst is selected from the group of Fe, Al, Ca, Ni, Mn, Cu, Zn, Sn, C, V, Ti, Cr, B, P, O, Cl and mixtures thereof. 12. The process of claim 1 , wherein the superficial gas velocity u L is 0.1 to 1 m/s. 13. The process of claim 1 , wherein the fluid density ρ F is 5 to 15 kg/m 3 . 14. The process of claim 1 , wherein the kinematic viscosity v F is 1.5*10 −6 to 5.4*10 −6 m 2 /s. 15. The process of claim 1 , wherein the absolute pressure in the fluidized bed reactor is 0.5 to 5 MPa. 16. The process of claim 1 , wherein the reaction is performed in a temperature range of 350° C. to 800° C. 17. The process of claim 1 , wherein the reaction gas contains, before entering the reactor, at least 10 vol % of hydrogen and silicon tetrachloride. 18. The process of claim 1 , wherein the fluidized bed reactor is integrated into an integrated system for production of polycrystalline silicon. 19. The process of claim 1 , wherein wherein A tot, cooled is a sum of cooled surface areas as determined by laser measurements or 3D scans in the reactor [m 2 ]; or wherein B AK is d 90 -d 10 ; or wherein the ca

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US12129177B2 cover?
The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reaction of a hydrogen and silicon tetrachloride-containing reaction gas with a particulate contact mass containing silicon and a catalyst. The chlorosilanes have the general formula H n SiCl 4-n and/or H m Cl 6-m Si 2 . The reactor design is described by an index K1, the constitution of the c…
Who is the assignee on this patent?
Wacker Chemie Ag
What technology area does this patent fall under?
Primary CPC classification C01B33/10742. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 29 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).