Photocatalyst

US12121885B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12121885-B2
Application numberUS-202017441315-A
CountryUS
Kind codeB2
Filing dateMar 18, 2020
Priority dateMar 22, 2019
Publication dateOct 22, 2024
Grant dateOct 22, 2024

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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A photocatalyst is described that is suitable for converting molecular nitrogen into ammonia. The photocatalyst comprises a layered base material comprising 1 to 100 layers, the layered base material being selected from the group consisting of molybdenum disulfide, tungsten disulfide, molybdenum telluride, tungsten telluride, molybdenum selenide and tungsten selenide, a layered base material comprising 1 to 100 layers, the layered base material being selected from the group consisting of molybdenum disulfide, tungsten disulfide, molybdenum telluride, tungsten telluride, molybdenum selenide and tungsten selenide, and 0.1-10.0% by weight, relative to the weight of the base material, of one or more Group VI, VII, VIII, IX or X transition metals. The photocatalyst can further comprise 0.1-50.0% by weight, relative to the weight of the base material, of one or more semiconductor materials having an average particle size of 0.5-50.0 nm. The photocatalyst exhibits high catalytic efficiency without the need for high temperature and pressure. Also described is a process for the preparation of the photocatalyst, as well as uses of the photocatalyst for converting molecular nitrogen into ammonia.

First claim

Opening claim text (preview).

The invention claimed is: 1. A photocatalyst comprising: a layered base material comprising 1 to 100 layers, the layered base material being selected from the group consisting of molybdenum disulfide, tungsten disulfide, molybdenum telluride, tungsten telluride, molybdenum selenide and tungsten selenide; and 0.1-10.0% by weight, relative to the weight of the base material, of one or more Group VI, VII, VIII, IX or X transition metals, wherein the one or more Group VI, VII, VIII, IX or X transition metals is selected from the group consisting of Fe, Mn, Co, Ni, Ru, Rh, Pd and Pt, wherein the photocatalyst further comprises 0.1-50.0% by weight, relative to the weight of the base material, of one or more semiconductor materials having an average particle size of 0.5-50.0 nm. 2. The photocatalyst of claim 1 , wherein the layered base material comprises 1 and 10 layers. 3. The photocatalyst of claim 1 , wherein the layered base material is molybdenum disulfide. 4. The photocatalyst of claim 1 , wherein the photocatalyst comprises 1.0-3.0% by weight, relative to the weight of the base material, of one or more Group VI, VII, VIII, IX or X transition metals. 5. The photocatalyst of claim 1 , wherein the one or more Group VI, VII, VIII, IX or X transition metals is Fe. 6. The photocatalyst of claim 1 , wherein the size of the one or more Group VI, VII, VIII, IX or X transition metals ranges from single atoms of the transition metals to atomic clusters of the transition metals having a maximum diameter of 4.0 nm. 7. The photocatalyst of claim 1 , wherein the one or more semiconductor materials has an average particle size of 0.5-15.0 nm. 8. The photocatalyst of claim 7 , wherein the one or more semiconductor materials has the compositional formula AB x C 1-x , wherein A is selected from the group consisting of Cd, Pb and In; B and C are selected from the group consisting of S, Se, Te, As and P; and x is a number ranging from 0.01 to 1. 9. The photocatalyst of claim 7 , wherein the one or more semiconductor materials is cadmium sulfide. 10. The photocatalyst of claim 1 , wherein the photocatalyst has an average particle size of 0.05-100 μm. 11. A process for preparing a photocatalyst as claimed in claim 1 , the process comprising the steps of: a) providing a dispersion of a layered base material comprising 1 to 100 layers, the layered base material being selected from the group consisting of molybdenum disulfide, tungsten disulfide, molybdenum telluride, tungsten telluride, molybdenum selenide and tungsten selenide; and b) contacting the dispersion of the layered base material with a solution of one or more Group VI, VII, VIII, IX or X transition metals, wherein the one or more Group VI, VII, VIII, IX or X transition metals is selected from the group consisting of Fe, Mn, Co, Ni, Ru, Rh, Pd and Pt, wherein the photocatalyst resulting from step b) is contacted with an aqueous solution of one or more semiconductor materials having an average particle size of 0.5-50.0 nm. 12. The process of claim 11 , wherein the layered base material having between 1 and 100 layers is prepared by exfoliating the base material in its bulk form. 13. The process of claim 12 , wherein the base material in its bulk form is exfoliated by: (i) contacting an aqueous mixture of the base material in its bulk form with an intercalant; (ii) sonicating the mixture resulting from step (i); and (iii) isolating the layered base material having between 1 and 100 layers resulting from step (ii). 14. The process of claim 13 , wherein step b) is conducted at a temperature of 130-190° C., under hydrothermal conditions. 15. A photocatalytic process for the conversion of molecular nitrogen to ammonia, the process comprising the step of: a) contacting molecular nitrogen with a photocatalyst as claimed in claim 1 in the presence of water; wherein step a) is performed under the application of electromagnetic radiation having a wavelength of 270-1000 nm. 16. The process of claim 15 , wherein the electromagnetic radiation is supplied to the mixture of step a) using a solar concentrator. 17. The process of claim 15 , wherein step a) is conducted at a temperature of 10-50° C. 18. The process of claim 15 , wherein the photocatalyst is provided as: A) a fixed bed; B) a suspension; or C) a thin film. 19. The process of claim 15 , wherein step a) is performed as: A) a batch process; or B) a continuous process.

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Classifications

  • Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

  • Nanoparticles · CPC title

  • Scanning electron microscopy; Transmission electron microscopy · CPC title

  • characterised by their shape or configuration · CPC title

  • characterised by dimensions, e.g. grain size (in a colloidal state B01J35/23; crystallite size B01J35/77) · CPC title

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What does patent US12121885B2 cover?
A photocatalyst is described that is suitable for converting molecular nitrogen into ammonia. The photocatalyst comprises a layered base material comprising 1 to 100 layers, the layered base material being selected from the group consisting of molybdenum disulfide, tungsten disulfide, molybdenum telluride, tungsten telluride, molybdenum selenide and tungsten selenide, a layered base material co…
Who is the assignee on this patent?
Univ Oxford Innovation Ltd
What technology area does this patent fall under?
Primary CPC classification B01J35/39. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Oct 22 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).