Solar cell and photovoltaic module

Patent metadata

Field	Value
Publication number	US-12119423-B2
Application number	US-202318488909-A
Country	US
Kind code	B2
Filing date	Oct 17, 2023
Priority date	Feb 2, 2023
Publication date	Oct 15, 2024
Grant date	Oct 15, 2024

Abstract

The solar cell includes a silicon substrate, multiple first electrodes, and multiple second electrodes. The solar cell further includes a tunneling oxide layer, multiple doped polysilicon layers, and at least one barrier layer. The at least one barrier layer is arranged between every adjacent two doped polysilicon layers in the multiple doped polysilicon layers, and the multiple first electrodes are electrically connected to different doped polysilicon layers. The solar cell provided according to the present application can reduce the total thickness of the polycrystalline silicon layer, so that a thinner polycrystalline silicon layer can reduce parasitic absorption, thereby increasing short-circuit current. Moreover, the risk of slurry burning through the tunneling oxide layer is reduced by the barrier layer, while reducing metal recombination, which increases the open circuit voltage of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.

First claim

What is claimed is:

1. A solar cell, comprising:
a silicon substrate;
a tunneling oxide layer formed on the silicon substrate;
a plurality of doped polysilicon layers including a first doped polysilicon layer over the tunneling oxide layer, a second doped polysilicon layer over the first doped polysilicon layer, and a third doped polycrystalline silicon layer;
at least one barrier layer, wherein the at least one barrier layer is between two adjacent doped polysilicon layers of the plurality of doped polysilicon layers, and the at least one barrier layer is denser than the plurality of doped polysilicon layers; and
a plurality of first electrodes, the plurality of first electrodes including electrodes that are electrically connected to different doped polysilicon layers;
wherein the at least one barrier layer comprises a first barrier layer arranged between the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer, and a second barrier layer arranged between the second doped polycrystalline silicon layer and the third doped polycrystalline silicon layer; wherein the first doped polycrystalline silicon layer is arranged closer to the tunneling oxide layer than the second doped polycrystalline silicon layer, and the third doped polycrystalline silicon layer is further away from the tunneling oxide layer than both the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer;
wherein the first doped polycrystalline silicon layer is doped with phosphorus elements, and the second doped polycrystalline silicon layer and the third doped polycrystalline silicon layer are doped with phosphorus elements, and further doped with carbon elements or nitrogen elements.

2. The solar cell according to claim 1 , wherein the first doped polycrystalline silicon layer has a lower doping concentration of phosphorus element than the second doped polycrystalline silicon layer.

3. The solar cell according to claim 1 , wherein the plurality of first electrodes comprise a first sub electrode and a second sub electrode, the first sub electrode is electrically connected to the third doped polycrystalline silicon layer, and the second sub electrode is electrically connected to the first doped polycrystalline silicon layer and/or the second doped polycrystalline silicon layer.

4. The solar cell according to claim 1 , wherein the first doped polycrystalline silicon layer has a lower doping concentration of phosphorus element than the second doped polycrystalline silicon layer, and the second doped polycrystalline silicon layer has a lower doping concentration of phosphorus element than the third doped polycrystalline silicon layer.

5. The solar cell according to claim 1 , wherein carbon elements or nitrogen elements doped in the second doped polycrystalline silicon layer and the third doped polycrystalline silicon layer are less than 5 wt %.

6. The solar cell according to claim 1 , wherein a ratio of a doping concentration ratio of phosphorus elements in the first doped polycrystalline silicon layer to a doping concentration ratio of phosphorus elements in the third doped polycrystalline silicon layer is 0.4 to 1.

7. The solar cell according to claim 1 , wherein a total thickness of the first doped polysilicon layer, the second doped polysilicon layer, and the third doped polysilicon layer along a direction perpendicular to the silicon substrate less than or equal to 70 nm.

8. The solar cell according to claim 7 , wherein a thickness of the first doped polysilicon layer, a thickness of the second doped polysilicon layer, and/or a thickness of the third doped polysilicon layer along the direction perpendicular to the silicon substrate all range from 5 to 40 nm.

9. The solar cell according to claim 1 , wherein a thickness of the first barrier layer and a thickness of the second barrier layer along a direction perpendicular to the silicon substrate both range from 0.5 to 2.5 nm.

10. The solar cell according to claim 1 , further comprising a plurality of second electrodes, wherein the silicon substrate comprises a base region and an emitter, the emitter is formed on a surface of the base region away from the tunneling oxide layer, and a passivation layer is arranged on a surface of the emitter away from the base region;
wherein the plurality of second electrodes penetrate through the passivation layer to be electrically connected to the emitter.

11. The solar cell according to claim 1 , wherein a material of the at least one barrier layer comprises silicon oxide, silicon nitride oxide, and aluminum oxide.

12. The solar cell according to claim 2 , wherein the doping concentration of phosphorus elements in doped polycrystalline silicon layer closest to the silicon substrate ranges from 2×10 20 /cm3 to 2×10 21 /cm3.

13. The solar cell according to claim 12 , wherein the doping concentration of phosphorus elements in the doped polycrystalline silicon layer farthest away from the silicon substrate ranges from 5×10 20 /cm3 to 5×10 21 /cm3.

14. The solar cell according to claim 6 , wherein the ratio of the doping concentration ratio of phosphorus elements in the first doped polycrystalline silicon layer to the doping concentration ratio of phosphorus elements in the third doped polycrystalline silicon layer is 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.

15. A photovoltaic module, comprising a first encapsulation panel, a first encapsulation adhesive film, at least one cell string, a second encapsulation adhesive film, and a second encapsulation panel that are stacked, wherein the at least one cell string is formed by electrically connecting a plurality of solar cells;
wherein each of the plurality of solar cells includes:
a silicon substrate;
a tunneling oxide layer formed on the silicon substrate;
a plurality of doped polysilicon layers including a first doped polysilicon layer over the tunneling oxide layer, a second doped polysilicon layer over the first doped polysilicon layer, and a third doped polysilicon layer;
at least one barrier layer, wherein the at least one barrier layer is between two adjacent doped polysilicon layers of the plurality of doped polysilicon layers, and the at least one barrier layer is denser than the plurality of doped polysilicon layers; and
a plurality of first electrodes, the plurality of first electrodes including electrodes that are electrically connected to different doped polysilicon layers;
wherein the at least one barrier layer comprises a first barrier layer arranged between the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer, and a second barrier layer arranged between the second doped polycrystalline silicon layer and the third doped polycrystalline silicon layer; wherein the first doped polycrystalline silicon layer is arranged closer to the tunneling oxide layer than the second doped polycrystalline silicon layer, and the third doped polycrystalline silicon layer is further away from the tunneling oxide layer than both the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer;
wherein the first doped polycrystalline silicon layer is doped with phosphorus elements, and the second doped polycrystalline silicon layer and the third doped polycrystalline silicon layer are doped with phosphorus elements, and further doped with carbon elements or nitrogen elements.

16. The photovoltaic module according to claim 15 , wherein the first doped polycrystalline silicon layer has a lower doping concentration of phosphorus element than the second doped polycrys

Assignees

• Zhejiang Jinko Solar Co Ltd
• Jinko Solar Co Ltd

Inventors

• Wang Hao
• Li Wenqi
• Yu Ding
• Wu Jiahao
• Liu Xu

Classifications

• H10F77/1223

  characterised by the dopants · CPC title

• H10F77/935

  for photovoltaic devices or modules · CPC title

• H10F71/1221

  comprising polycrystalline silicon · CPC title

• H10F10/166

  the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells · CPC title

• H10F10/165

  the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells · CPC title