Laminate and method for producing same

Patent metadata

Field	Value
Publication number	US-12116671-B2
Application number	US-202017614222-A
Country	US
Kind code	B2
Filing date	Sep 11, 2020
Priority date	Oct 10, 2019
Publication date	Oct 15, 2024
Grant date	Oct 15, 2024

Abstract

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

First claim

The invention claimed is:

1. A laminate comprising a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer,
wherein pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater, and
wherein the nickel-containing plating film layer comprises a nickel-phosphorus alloy plating layer (1) having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and a nickel-phosphorus alloy plating layer (2) having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower in this order from the metallic base material.

2. The laminate according to claim 1 , wherein the metallic base material comprises at least a metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys.

3. The laminate according to claim 1 , having a nickel strike layer between the metallic base material and the nickel-containing plating film layer.

4. A constituent member of a semiconductor production device, made up of the laminate according to claim 1 .

5. A laminate comprising a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer,
wherein pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater, and
wherein the gold plating film layer comprises a displacement gold plating film layer and a reduction gold plating film layer in this order from the nickel-containing plating film layer.

6. The laminate according to claim 5 , wherein the metallic base material comprises at least a metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys.

7. The laminate according to claim 5 , having a nickel strike layer between the metallic base material and the nickel-containing plating film layer.

8. A constituent member of a semiconductor production device, made up of the laminate according to claim 5 .

9. A method for producing the laminate according to claim 1 , comprising
a step (A) of forming a nickel-containing plating film layer on a metallic base material,
a step (B) of forming a gold plating film layer on the nickel-containing plating film layer, and
a sealing treatment step (C) of forming a fluorinated passive film having a thickness of 8 nm or greater in pinholes in the gold plating film layer.

10. The method for producing the laminate according to claim 9 , wherein the sealing treatment step (C) is performed in an atmosphere in which a fluorinated gas concentration is 8% by volume or higher and a temperature is 100 to 150° C.

11. The method for producing the laminate according to claim 9 , wherein the metallic base material comprises at least one metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys.

12. The method for producing the laminate according to claim 9 , comprising a step of subjecting the metallic base material to a nickel strike treatment under the condition of a current density of 5 to 20 A/dm 2 before the step (A).

13. The method for producing the laminate according to claim 9 , wherein the step (A) comprises a step (a1) of forming a nickel-phosphorus alloy plating layer (1) having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and a step (a2) of forming a nickel-phosphorus alloy plating layer (2) having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower after the step (a1).

14. The method for producing the laminate according to claim 9 , wherein the step (B) comprises a step (b1) of forming a displacement gold plating film layer, and a step (b2) of forming a reduction gold plating film layer after the step (b1).

Assignees

• Showa Denko Kk
• Resonac Corp

Inventors

• Furuya Akira
• Kojima Tadaaki
• Suzuki Hiroshi

Classifications

• H10P72/7616 Primary

  characterised by a coating, a hardness or a material · CPC title

• C23C18/1689

  After-treatment · CPC title

• C25D3/12

  of nickel or cobalt · CPC title

• C23C28/021

  including at least one metal alloy layer · CPC title

• C23C18/50

  with alloys based on iron, cobalt or nickel · CPC title