Interfacial layer for optical film performance

Patent metadata

Field	Value
Publication number	US-12110582-B2
Application number	US-202217698566-A
Country	US
Kind code	B2
Filing date	Mar 18, 2022
Priority date	Mar 24, 2021
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

First claim

What is claimed is:

1. A method of forming an optical device, the method comprising:
disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface;
forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein
the first optical layer comprises a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and
the first optical layer is formed without an RF-generated plasma over the optical device substrate;

forming a second optical layer with an RF-generated plasma on and in contact with the first optical layer during a second time period when the optical device substrate is on the substrate support, wherein
the first optical layer is disposed between the optical device substrate and the second optical layer,
the second optical layer is spaced apart from the optical device substrate in a first direction,
the second optical layer comprises a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride,
the first optical layer and the second optical layer consist of a single metal and one or more of oxygen and nitrogen,
the single metal is selected from the group consisting of titanium (Ti), niobium (Nb), silicon (Si), tantalum (Ta), aluminum (Al), chromium (Cr), ruthenium (Ru), hafnium (Hf), magnesium (Mg), zirconium (Zr), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), bismuth (Bi), antimony (Sb), gadolinium (Gd), and yttrium (Y),
the first optical layer has a thickness in the first direction between an atomic layer and about 10 nm, and
the second optical layer has a thickness in the first direction of greater than about 20 nm; and

forming a plurality of optical device structures over the substrate, the plurality of optical device structures spaced apart from each other in a second direction that is perpendicular to the first direction, wherein each optical device structure includes a portion of the first optical layer and a portion of the second optical layer.

2. The method of claim 1 , wherein the first optical layer and the second optical layer comprise a same material.

3. The method of claim 2 , wherein the first optical layer and the second optical layer are each formed of titanium oxide.

4. The method of claim 1 , wherein the thickness of the second optical layer in the first direction is at least ten times greater than the thickness of the first optical layer in the first direction.

5. The method of claim 1 , wherein a temperature of the substrate during the first time period is less than 50° C. and the temperature of the substrate during the second time period is greater than 300° C.

6. The method of claim 1 , wherein
a target containing a metal in the first optical layer is positioned in the process volume,
a pulsed direct current voltage is applied between the target and the substrate support during the first time period, and
the pulsed direct current voltage is pulsed during the first time period at frequency from about 50 kHz to about 300 KHz.

7. The method of claim 1 , wherein the first optical layer and the second optical layer consist of a single material that is the same material in both the first optical layer and the second optical layer.

8. The method of claim 1 , wherein forming the first optical layer comprises:
depositing a metal-containing film in an absence of oxygen and nitrogen during a first portion of the first time period, and
providing one or more of oxygen and nitrogen to the process volume during a second portion of the first time period, wherein the second portion of the first time period occurs after the first portion of the first time period.

9. The method of claim 1 , wherein each optical device structure of the plurality of optical device structures has a sub-micron width in the second direction.

10. A method of forming an optical device, the method comprising:
disposing an optical device substrate on a first substrate support in a first process volume of a first process chamber, the optical device substrate having a first surface;
forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the first substrate support in the first process volume, wherein
the first optical layer comprises a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and
the first optical layer is formed without an RF-generated plasma over the optical device substrate;

disposing the optical device substrate on a second substrate support in a second process volume of a second process chamber; and
forming a second optical layer with an RF-generated plasma on an in contact with the first optical layer during a second time period when the optical device substrate is on the second substrate support, wherein
the first optical layer is disposed between the optical device substrate and the second optical layer,
the second optical layer is spaced apart from the optical device substrate in a first direction,
the second optical layer comprises a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride,
the first optical layer and the second optical layer consist of a single metal and one or more of oxygen and nitrogen,
the single metal is selected from the group consisting of titanium (Ti), niobium (Nb), silicon (Si), tantalum (Ta), aluminum (Al), chromium (Cr), ruthenium (Ru), hafnium (Hf), magnesium (Mg), zirconium (Zr), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), bismuth (Bi), antimony (Sb), gadolinium (Gd), and yttrium (Y),
the first optical layer has a thickness in the first direction between an atomic layer and about 10 nm, and
the second optical layer has a thickness in the first direction of greater than about 20 nm; and

forming a plurality of optical device structures over the substrate, the plurality of optical device structures spaced apart from each other in a second direction that is perpendicular to the first direction, wherein each optical device structure includes a portion of the first optical layer and a portion of the second optical layer.

11. The method of claim 10 , wherein the first optical layer and the second optical layer comprise a same material.

12. The method of claim 11 , wherein the first optical layer and the second optical layer are each formed of titanium oxide.

13. The method of claim 10 , wherein
the thickness of the second optical layer in the first direction is at least ten times greater than the thickness of the first optical layer in the first direction, and
the thickness of the first optical layer is from about 2 nm to about 6 nm.

14. The method of claim 10 , wherein a temperature of the substrate during the first time period is less than 50° C. and the temperature of the substrate during the second time period is greater than 300ºC.

15. The method of claim 10 , wherein
a target containing a metal in the first optical layer is positioned in the first process volume,
a direct current voltage is applied between the target and the first substrate support during the first time period, and
the direct current voltage is pulsed on and off during the first time period at frequency from 50 kHz to about 300 KHz.

16. The method of claim 10 , w

Assignees

• Ohno Kenichi
• KURATOMI Takashi
• Hayee Fariah
• Ceballos Andrew
• Hourani Rami
• Godet Ludovic
• Applied Materials Inc

Inventors

• Ohno Kenichi
• KURATOMI Takashi
• Hayee Fariah
• Ceballos Andrew
• Hourani Rami
• Godet Ludovic

Classifications

• C23C14/3485

  using pulsed power to the target · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/083 Primary

  of refractory metals or yttrium · CPC title