Composition for semiconductor processing and method of fabricating semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-12110421-B2
Application number	US-202217570230-A
Country	US
Kind code	B2
Filing date	Jan 6, 2022
Priority date	Jan 8, 2021
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

Provided is a composition for semiconductor processing including abrasive particles and at least one additive. The composition may exhibit excellent polishing performance by being applied to a process of polishing a semiconductor wafer, may minimize defects in a polishing target surface, may achieve flat polishing without a difference in flatness between a plurality of different layers when used to polish the externally exposed surfaces of the layers, and may be applied to polishing of the surface of a semiconductor wafer having a through silicon via (TSV). Also provided is a method of fabricating a semiconductor device using the composition.

First claim

What is claimed is:

1. A composition for semiconductor processing containing:
abrasive particles surface-modified with a silane composition; and at least one additive, and being for application to polishing of a surface of a semiconductor wafer having a through silicon via (TSV),
wherein the at least one additive includes a phosphoric acid-based compound, an organic acid and an azole-based compound, and

the total weight of the phosphoric acid-based compound is 0.35 parts by weight to about 2.00 parts by weight based on 100 parts by weight of the total weight of the organic acid and the azole-based compound,
wherein the abrasive particles comprise silica (SiO 2 ),
wherein a ratio of R N to R Cu (R N /R Cu ) for the composition for semiconductor processing is greater than about 0.50 to less than or equal to about 2.00,
wherein the value calculated according to Equation 1 for the composition for semiconductor processing is greater than 11.0 to less than or equal to 110.0:

(

R
Cu

R
N

)

2

×

R
O

100

[

Equation
⁢

1

]

wherein R O is the removal rate (Å/min) of a silicon oxide layer during polishing using the composition for semiconductor processing, R N is the removal rate (Å/min) of a silicon nitride layer during polishing using the composition for semiconductor processing, and R Cu is the removal rate (Å/min) of a copper layer during polishing using the composition for semiconductor processing; and each of the removal rate of the silicon oxide layer, the removal rate of the silicon nitride layer, and the removal rate of the copper layer is a value obtained by performing polishing on a wafer having each of the layers for 60 seconds under conditions of a carrier pressing pressure of 3.0 psi, a carrier rotation speed of 120 rpm and a surface plate rotation speed of 117 rpm while supplying the composition for semiconductor processing at a flow rate of 300 mL/min.

2. The composition of claim 1 , wherein a value calculated according to Equation 2 below is greater than 0.50 and less than or equal to 7.00:

R
O

R
N

.

[

Equation
⁢

2

]

3. The composition of claim 2 , wherein R O is 500 Å/min to 5,000 Å/min.

4. The composition of claim 2 , wherein R N is 400 Å/min to 3,000 Å/min.

5. The composition of claim 2 , wherein a value calculated according to Equation 3 below is greater than 1.00 and less than or equal to 7.00:

R
O

R
Cu

.

[

Equation
⁢

3

]

6. The composition of claim 5 , wherein R Cu is 400 Å/min to 3,500 Å/min.

7. The composition of claim 1 , wherein a weight ratio of the organic acid to the azole-based compound is greater than and equal to 3:1 and less than 10:1.

8. The composition of claim 1 , wherein the organic acid is contained in an amount of 0.5 to 6 parts by weight based on 100 parts by weight of the abrasive particles.

9. The composition of claim 1 having a pH 2 to 5.

10. The composition of claim 1 , wherein the abrasive particles further comprise one selected from the group consisting of ceria (CeO 2 ), alumina (Al 2 O 3 ), zirconia (ZrO 2 ), and combinations thereof.

11. The composition of claim 1 , wherein the abrasive particles in the composition comprise particles surface-treated so that a zeta potential of the abrasive particles has a positive (+) value.

12. The composition of claim 1 , wherein the abrasive particles comprise particles surface-treated with at least one organic component selected from the group consisting of amino silane, alkoxy silane, ethoxy silane, epoxy silane, and combinations thereof.

13. The composition of claim 1 , wherein the abrasive particles have a value of 1.10 to 1.80 as calculated according to Equation 4 below:
D90/D10  [Equation 4]

wherein D90 is a 90% cumulative mass particle size distribution diameter in a particle size distribution of the abrasive particles, and D10 is a 10% cumulative mass particle size distribution diameter in the particle size distribution of the abrasive particles.

Assignees

• Sk Enpulse Co Ltd

Inventors

• Hong Seung Chul
• Han Deok Su
• Park Han Teo

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title