Polishing composition

Patent metadata

Field	Value
Publication number	US-9505951-B2
Application number	US-201314440216-A
Country	US
Kind code	B2
Filing date	Sep 30, 2013
Priority date	Nov 2, 2012
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

[Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.
[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

First claim

The invention claimed is:

1. A polishing composition used in polishing a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition comprising:
abrasive grains;
an oxidant;
a metal corrosion inhibitor;
a pH adjusting agent; and
water, wherein
an aspect ratio of the abrasive grains is 1.22 or less and more than 1.0,
a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from a fine particle side reaches 90% of a total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more and 3.0 or less in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

2. The polishing composition according to claim 1 , wherein the abrasive grains are colloidal silica.

3. The polishing composition according to claim 1 , wherein an average primary particle size of the abrasive grains is from 20 nm to 200 nm.

4. The polishing composition according to claim 1 , wherein the barrier layer contains tantalum or a noble metal.

5. A polishing method to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film using the polishing composition according to claim 1 .

6. A method for producing a substrate, comprising:
a step of polishing a polishing object having a barrier layer, a metal wiring layer and an insulating film by the polishing method according to claim 5 .

Assignees

• Fujimi Inc

Inventors

• Umeda Takahiro
• Onishi Shogo
• Yoshikawa Takeshi
• Kachi Yoshihiro

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title