Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopant

Patent metadata

Field	Value
Publication number	US-12104274-B2
Application number	US-202017784742-A
Country	US
Kind code	B2
Filing date	Dec 3, 2020
Priority date	Dec 13, 2019
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.

First claim

What is claimed is:

1. A method for producing a single silicon crystal doped with n-type dopant and having a cylindrical portion with an electrical resistivity of not more than 2 mΩ·cm comprising:
pulling the single crystal by the CZ method from a melt contained in a crucible, and during the pulling of the cylindrical portion of the single crystal,
supplying a gas stream comprising gaseous dopant to a surface of the melt, the gas stream being guided from a sublimation facility outside a pulling chamber through a tubing system into the pulling chamber, and through a heat shield surrounding the growing single crystal or along an outer surface of the heat shield, to an annular channel on a lower end of the heat shield and from there through a plurality of nozzles to the surface of the melt,
ascertaining dopant consumption by a weighing cell, a camera with image processing, a flow meter, or combination thereof, located in a part of the tubing system which lies outside the pulling chamber, and
controlling a supply of dopant to the melt.

2. The method of claim 1 , wherein the dopant, in the form of a chemical compound of the dopant or in a molecular or atomic form of elemental dopant, is guided to the surface of the melt, and the dopant comprises one or more of the elements P, As, and/or Sb.

3. The method of claim 1 , wherein the dopant is passed through from 4 to 100 nozzles to the surface of the melt.

4. The method of claim 1 , wherein the gas stream is guided by the nozzles in a direction perpendicular to the surface of the melt, toward the surface of the melt in a direction away from an axis through the middle of the single crystal, or toward the surface of the melt in a direction toward the axis through the middle of the single crystal, or combinations of these directions.

5. The method of claim 1 , wherein the gas stream is guided to the surface of the melt by adjacent nozzles in respectively different directions on account of their arrangement, with alternation of an arrangement perpendicular to the surface of the melt, a tilted arrangement toward the single crystal and a tilted arrangement away from the single crystal.

6. The method of claim 1 , wherein the tubing of the tubing system which is outside of the pulling chamber is heated regionally or completely from outside of the tubing.

7. The method of claim 1 , wherein dopant consumption is ascertained by a flow meter in the part of the tubing system which lies outside the pulling chamber.

8. The method of claim 1 , wherein dopant consumption is ascertained by a weighing cell in the part of the tubing system which lies outside the pulling chamber.

9. An apparatus for producing a single silicon crystal doped with an n-type dopant and having a cylindrical portion with an electrical resistivity of not more than 2 mΩ·cm, comprising:
a pulling chamber for pulling the single crystal by the CZ method;
a crucible for accommodating a melt of silicon;
a heat shield for shielding a growing single crystal;
a sublimation facility for converting solid dopant into gaseous dopant, and a tubing system for supplying a gas stream comprising the gaseous dopant to a surface of the melt,
wherein the sublimation facility is located outside the pulling chamber, and the tubing system, leading through the heat shield or along an outer surface of the heat shield, opens out into an annular channel at a lower end of the heat shield, and the annular channel has a plurality of nozzles for guiding the gaseous dopant to the surface of the melt, further comprising a weighing cell, a camera with image processing, a flow meter or combination thereof in a part of the tubing system which lies outside the pulling chamber.

10. The apparatus of claim 9 , comprising from 4 to 100 nozzles.

11. The apparatus of claim 9 , wherein the nozzles are distributed with uniform spacing over the annular channel.

12. The apparatus of claim 9 , wherein adjacent nozzles are arranged such that the gas streams are guided in respectively different directions to the surface of the melt, with alternation of an arrangement perpendicular to the surface of the melt, a tilted arrangement toward the single crystal and a tilted arrangement away from the single crystal.

13. The apparatus of claim 9 , further comprising a tubing heater which heats the tubing system outside the pulling chamber, regionally or completely, from the outside.

14. The apparatus of claim 9 , wherein dopant consumption is ascertained by a flow meter in the part of the tubing system which lies outside the pulling chamber.

15. The apparatus of claim 9 , wherein dopant consumption is ascertained by a weighing cell in the part of the tubing system which lies outside the pulling chamber.

Assignees

• Siltronic Ag

Inventors

• Staudacher Wolfgang
• Raming Georg

Classifications

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/26

  using television detectors; using photo or X-ray detectors · CPC title

• C30B15/10

  Crucibles or containers for supporting the melt · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title

• C30B15/04 Primary

  adding doping materials, e.g. for n-p-junction · CPC title