Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

Patent metadata

Field	Value
Publication number	US-12100749-B2
Application number	US-202218059700-A
Country	US
Kind code	B2
Filing date	Nov 29, 2022
Priority date	Sep 26, 2019
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

First claim

What is claimed is:

1. A ferroelectric thin-film structure, comprising:
at least one first atomic layer including a first dielectric material;
at least one second atomic layer including a second dielectric material; and
at least one third atomic layer having a third dielectric material and a dopant, the dopant having a bandgap greater than a bandgap of the third dielectric material, the third dielectric material including at least one of the first dielectric material and the second dielectric material,
wherein the ferroelectric thin-film structure has a crystallized material structure, and
wherein the at least one third atomic layer has a different total material composition than both the at least one first atomic layer and the at least one second atomic layer.

2. The ferroelectric thin-film structure of claim 1 , wherein the ferroelectric thin-film structure has a thickness of 0.1 nm to 2 nm.

3. The ferroelectric thin-film structure of claim 1 , wherein each of the first dielectric material and the second dielectric material includes
an oxide of at least one of hafnium (Hf), zirconium (Zr), or aluminum (Al), or
a perovskite of at least one of hafnium (Hf), zirconium (Zr), or aluminum (Al).

4. The ferroelectric thin-film structure of claim 1 , wherein the dopant includes an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), or gadolinium (Gd).

5. The ferroelectric thin-film structure of claim 1 , wherein the at least one third atomic layer is disposed on at least one of
an uppermost portion of the ferroelectric thin-film structure,
a middle portion of the ferroelectric thin-film structure, or
a lowermost portion of the ferroelectric thin-film structure.

6. A method of forming a ferroelectric thin-film structure by atomic layer deposition (ALD), the method comprising:
forming a stacked structure by depositing, on a substrate, at least one first atomic layer, at least one second atomic layer, and at least one third atomic layer according to atomic layer deposition (ALD) operations; and
crystallizing the at least one first atomic layer, the at least one second atomic layer, and the at least one third atomic layer by a heat treatment,
wherein
the at least one first atomic layer includes a first dielectric material,
the at least one second atomic layer includes a second dielectric material,
the at least one third atomic layer includes a third dielectric material and a dopant,
the dopant has a bandgap greater than a bandgap of the first dielectric material,
the third dielectric material includes at least one of the first dielectric material and the second dielectric material, and
the at least one third atomic layer has a different total material composition than both the at least one first atomic layer and the at least one second atomic layer.

7. The method of claim 6 , wherein the ferroelectric thin-film structure has a thickness of 0.1 nm to 2 nm.

8. The method of claim 6 , wherein the forming the stacked structure includes disposing the at least one third atomic layer on at least one of
an uppermost portion of the stacked structure,
a middle portion of the stacked structure, or
a lowermost portion of the stacked structure.

9. The method of claim 6 , wherein a sum of a number of the at least one first atomic layer and a number of the at least one second atomic layer is greater than a number of the at least one third atomic layer.

10. The method of claim 6 , wherein the first dielectric material is same as the second dielectric material.

11. The method of claim 6 , wherein the first dielectric material is different from the second dielectric material.

12. The method of claim 6 , wherein each of the first dielectric material and the second dielectric material includes
an oxide of at least one of hafnium (Hf), zirconium (Zr), or aluminum (Al), or
a perovskite of at least one of hafnium (Hf), zirconium (Zr), or aluminum (Al).

13. The method of claim 6 , wherein the dopant includes an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), or gadolinium (Gd).

14. An electronic device, comprising:
a substrate;
at least one electrode on the substrate; and
a ferroelectric thin-film structure between the substrate and the at least one electrode, the ferroelectric thin-film structure including
at least one first atomic layer including a first dielectric material,
at least one second atomic layer including a second dielectric material, and
at least one third atomic layer including a third dielectric material and a dopant, the dopant having a bandgap greater than a bandgap of the first dielectric material, the third dielectric material including at least one of the first dielectric material and the second dielectric material,

wherein the ferroelectric thin-film structure has a crystallized material structure, and
wherein the at least one third atomic layer has a different total material composition than both the at least one first atomic layer and the at least one second atomic layer.

15. The electronic device of claim 14 , wherein the ferroelectric thin-film structure has a thickness of 0.1 nm to 2 nm.

16. The electronic device of claim 14 , wherein
the first dielectric material is same as the second dielectric material, or the first dielectric material is different from the second dielectric material,
each of the first dielectric material and the second dielectric material includes
an oxide of at least one of hafnium (Hf), zirconium (Zr), or aluminum (Al), or
a perovskite of at least one of hafnium (Hf), zirconium (Zr), or aluminum (Al), and

the dopant includes an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), or gadolinium (Gd).

17. The electronic device of claim 14 , wherein the at least one third atomic layer is disposed on at least one of
an uppermost portion of the ferroelectric thin-film structure,
a middle portion of the ferroelectric thin-film structure, or
a lowermost portion of the ferroelectric thin-film structure.

18. The electronic device of claim 14 , wherein
the at least one electrode includes a gate electrode, and
wherein the substrate includes
a channel element vertically overlapping with the gate electrode, and
a source and a drain at opposite sides of the channel element.

19. The electronic device of claim 14 , wherein
the at least one electrode includes a first electrode and a second electrode spaced apart from each other, and
the ferroelectric thin-film structure is between the first electrode and the second electrode.

20. The electronic device of claim 14 , wherein the electronic device includes at least one of a processing circuitry or a memory.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Yunseong
• Kim Sangwook
• Jo Sanghyun
• Heo Jinseong
• Lee Hyangsook

Classifications

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10D30/701

  IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs · CPC title

• H10D30/0415

  of FETs having ferroelectric gate insulators · CPC title

• H10D64/689 Primary

  having ferroelectric layers · CPC title

• H10D64/033

  comprising ferroelectric layers · CPC title