Display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12100340-B2
Application number	US-202318233148-A
Country	US
Kind code	B2
Filing date	Aug 11, 2023
Priority date	Dec 11, 2019
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

First claim

What is claimed is:

1. A method of manufacturing a display apparatus, the method comprising:
forming a first semiconductor layer on an epitaxial substrate;
forming an active layer on the first semiconductor layer;
forming a second semiconductor layer on the active layer;
isolating the active layer based on each of a plurality of subpixels;
forming a first electrode on the second semiconductor layer based on each of the plurality of subpixels;
forming a driving layer which comprises a driving element electrically connected to the first electrode;
removing the epitaxial substrate;
forming a second electrode on the first semiconductor layer; and
forming a reflective layer on the second electrode opposite to the first semiconductor layer,
wherein the reflective layer comprises a distributed Bragg reflector, and
wherein the first semiconductor layer is provided to cover the plurality of subpixels in common and comprises a planar surface through the plurality of subpixels.

2. The method of claim 1 , wherein the isolating of the active layer based on each of the plurality of subpixels comprises forming an ion-implanted region.

3. The method of claim 1 , wherein the first electrode comprises a reflective material configured to reflect light.

4. The method of claim 1 , further comprising bonding the driving layer to a second substrate by a fusion bonding method or a direct bonding method.

5. The method of claim 4 , wherein the second substrate and the driving layer are formed through a complementary metal-oxide semiconductor (CMOS) backplane manufacturing process, and the driving layer and the first electrode are coupled to each other by a copper damascene method.

6. The method of claim 1 , wherein the second electrode is transparent and covers the first semiconductor layer.

7. The method of claim 1 , wherein the second electrode is opaque, and a window region is formed in the second electrode to transmit light emitted from the active layer.

8. The method of claim 7 , wherein a width of the active layer is less than a width of the window region.

9. The method of claim 1 , further comprising forming a plurality of color conversion layers based on each of a plurality of subpixels, the plurality of color conversion layers being configured to convert light emitted from the active layer into light having different colors.

10. The method of claim 1 , wherein the first electrode faces the active layer.

11. The method of claim 1 , further comprising forming a current spreading layer between the first semiconductor layer and the reflective layer and between the reflective layer and the second electrode.

12. The method of claim 1 , further comprising forming a current spreading layer between the first semiconductor layer and the reflective layer and between the first semiconductor layer and the second electrode.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Junhee
• Kong Kiho
• Kim Nakhyun
• Park Junghun
• Park Jinjoo
• Han Joohun

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10K59/878 Primary

  comprising reflective means · CPC title

• G09G3/32 Primary

  semiconductive, e.g. using light-emitting diodes [LED] · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10D86/40

  characterised by multiple TFTs · CPC title