Display device

Patent metadata

Field	Value
Publication number	US-2018190878-A1
Application number	US-201715841290-A
Country	US
Kind code	A1
Filing date	Dec 14, 2017
Priority date	Dec 30, 2016
Publication date	Jul 5, 2018
Grant date	—

Abstract

A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.

First claim

What is claimed is:

1 . A display device, comprising:
a backplane; a plurality of light-emitting devices disposed on the backplane; a first distributed Bragg reflector layer disposed between the backplane and the light-emitting devices; and a second distributed Bragg reflector layer, wherein the light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer, and a projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane.

2 . The display device according to claim 1 , wherein each of the light-emitting devices comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer, wherein the active layer is disposed between the first type semiconductor layer and the second type semiconductor layer, the first type semiconductor layer is disposed between the active layer and the first distributed Bragg reflector layer, and the second type semiconductor layer is disposed between the second distributed Bragg reflector layer and the active layer, wherein at least one of the first distributed Bragg reflector layer and the second distributed Bragg reflector layer is conductive.

3 . The display device according to claim 2 , wherein the first distributed Bragg reflector layer is conductive and comprises a plurality of sub Bragg reflector structures that are separated from one another, and the first type semiconductor layer of each of the light-emitting devices is electrically connected with one of the sub Bragg reflector structures.

4 . The display device according to claim 3 , wherein the second distributed Bragg reflector layer is conductive, and the second type semiconductor layers of the light-emitting devices are electrically connected with the second distributed Bragg reflector layer.

5 . The display device according to claim 3 , wherein the second distributed Bragg reflector layer is an insulator and comprises a plurality of conductive through holes, and the second type semiconductor layer of each of the light-emitting devices is connected with one of the conductive through holes.

6 . The display device according to claim 2 , wherein the first distributed Bragg reflector layer is electrically insulated while the second distributed Bragg reflector layer is conductive, and the first distributed Bragg reflector layer comprises a plurality of conductive through holes, wherein the first type semiconductor layer of each of the light-emitting devices is connected with one of the conductive through holes of the first distributed Bragg reflector layer, and the second type semiconductor layers of the light-emitting devices are electrically connected with the second distributed Bragg reflector layer.

7 . The display device according to claim 2 , wherein a material of at least one of the first distributed Bragg reflector layer and the second distributed Bragg reflector layer comprises silver.

8 . The display device according to claim 1 , wherein each of the light-emitting devices comprises a first type semiconductor layer, an active layer, and a second type semiconductor layer, wherein the active layer is disposed between the first type semiconductor layer and the second type semiconductor layer, the first type semiconductor layer is disposed between the active layer and the first distributed Bragg reflector layer, and the second type semiconductor layer is disposed between the second distributed Bragg reflector layer and the active layer, wherein at least one of the first distributed Bragg reflector layer and the second distributed Bragg reflector layer is electrically insulated.

9 . The display device according to claim 8 , wherein the first distributed Bragg reflector layer and the second distributed Bragg reflector layer are electrically insulated, and the first distributed Bragg reflector layer comprises a plurality of first conductive through holes, and the first type semiconductor layer of each of the light-emitting devices is connected with one of the first conductive through holes, wherein the second distributed Bragg reflector layer comprises a plurality of second conductive through holes, and the second type semiconductor layer of each of the light-emitting devices is connected with one of the second conductive through holes.

10 . The display device according to claim 8 , wherein the first distributed Bragg reflector layer is electrically insulated, and the first distributed Bragg reflector layer comprises a plurality of first conductive through holes and a plurality of second conductive through holes, wherein the first type semiconductor layer of each of the light-emitting devices is connected with one of the first conductive through holes, and the second type semiconductor layer of each of the light-emitting devices is connected with one of the second conductive through holes.

11 . The display device according to claim 8 , wherein the second distributed Bragg reflector layer is electrically insulated, and the second distributed Bragg reflector layer comprises a plurality of first conductive through holes and a plurality of second conductive through holes, wherein the first type semiconductor layer of each of the light-emitting devices is connected with one of the first conductive through holes, and the second type semiconductor layer of each of the light-emitting devices is connected with one of the second conductive through holes.

12 . The display device according to claim 1 , wherein at least one of the first distributed Bragg reflector layer and the second distributed Bragg reflector layer comprises a multilayer film.

13 . The display device according to claim 1 , wherein a reflectivity of the first distributed Bragg reflector layer is different from a reflectivity of the second distributed Bragg reflector layer.

14 . The display device according to claim 1 , wherein each of the light-emitting devices is a micro-LED, and a diagonal length of each of the light-emitting devices falls in a range of 2 μm to 150 μm.

15 . The display device according to claim 1 , wherein the light-emitting devices emit lights include different colors.

16 . The display device according to claim 1 , wherein the projected area of the second distributed Bragg reflector layer on the backplane is larger than the projected area of one of the light-emitting devices on the backplane.

Assignees

• Playnitride Inc

Inventors

• Li Yun-Li
• Lai Yu-Hung
• Lin Tzu-Yang

Classifications

• G02B5/288

  comprising at least one thin film resonant cavity, e.g. in bandpass filters · CPC title

• G02B5/085

  at least one of the reflecting layers comprising metal · CPC title

• H10W90/00

  Package configurations · CPC title

• H01L33/382

  Electricity · mapped topic

• H01L25/0753

  Electricity · mapped topic