Semiconductor device, electric power conversion device, and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-12095382-B2
Application number	US-202017442279-A
Country	US
Kind code	B2
Filing date	Apr 1, 2020
Priority date	Apr 12, 2019
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor element that converts direct-current electric power into alternating-current electric power;
a direct-current terminal that transmits direct-current electric power;
an alternating-current terminal that transmits alternating-current electric power;
a sealing member that seals the semiconductor element, at least a part of the direct-current terminal, and at least a part of the alternating-current terminal;
at least one floating terminal that is arranged between the direct-current terminal and the alternating-current terminal;
an insulating layer that supports the semiconductor element; and
a floating electrode that is formed on the insulating layer,
wherein a root portion of the floating terminal is connected to the floating electrode.

2. The semiconductor device according to claim 1 ,
wherein the floating terminal is covered with a resin made of a material different from that of the sealing member.

3. The semiconductor device according to claim 1 ,
wherein the entire floating terminal including a tip end portion is covered with the sealing member and/or a resin made of a material different from the sealing member.

4. The semiconductor device according to claim 1 ,
wherein at least a part of the floating terminal is covered with a resin having a dielectric constant smaller than that of the sealing member.

5. The semiconductor device according to claim 1 ,
wherein a tip end surface of the floating terminal protrudes as compared to a tip end surface of the direct-current terminal and a tip end surface of the alternating-current terminal.

6. The semiconductor device according to claim 1 ,
wherein a root portion of the direct-current terminal, a root portion of the alternating-current terminal, and the root portion of the floating terminal are substantially linearly arrayed, and a tip end portion of the direct-current terminal or a direct-current terminal member connected to the direct-current terminal and a tip end portion of the alternating-current terminal or an alternating-current terminal member connected to the alternating-current terminal extend in directions opposite to each other in a height direction of the floating terminal.

7. An electric power conversion device comprising:
a semiconductor device comprising
a semiconductor element that converts direct-current electric power into alternating-current electric power;
a direct-current terminal that transmits direct-current electric power;
an alternating-current terminal that transmits alternating-current electric power;
a sealing member that seals the semiconductor element, at least a part of the direct-current terminal, and at least a part of the alternating-current terminal; and
at least one floating terminal that is arranged between the direct-current terminal and the alternating-current terminal; and

a control terminal that is connected to a control electrode of the semiconductor element,
wherein the control terminal is provided adjacent to the direct-current terminal or the alternating-current terminal, and
wherein at least another floating terminal is provided between the control terminal and the direct-current terminal or the alternating-current terminal.

8. A manufacturing method of a semiconductor device, comprising:
connecting each of a direct-current terminal and an alternating-current terminal to a semiconductor element that converts direct-current electric power into alternating-current electric power;
supporting the semiconductor element on an insulating layer;
sealing the semiconductor element and at least a part of each of the direct-current terminal and the alternating-current terminal with a sealing member; and
providing at least one floating terminal between the direct-current terminal and the alternating-current terminal, and connecting a root portion of the at least one floating terminal to a floating electrode formed on the insulating layer.

9. The manufacturing method of the semiconductor device according to claim 8 ,
wherein providing the floating terminal includes
forming a lead frame in which the floating terminal is integrated with the direct-current terminal and the alternating-current terminal,
sealing a part of each of the direct-current terminal, the alternating-current terminal, and the floating terminal of the lead frame with the sealing member, and
separating the direct-current terminal, the alternating-current terminal, and the floating terminal from each other by cutting the lead frame.

Assignees

• Hitachi Ltd

Inventors

• Ide Eiichi
• Kusukawa Junpei
• Tsuyuno Nobutake

Classifications

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W70/658

  for devices provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title