Light emitting diode and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-12095010-B2
Application number	US-202218051182-A
Country	US
Kind code	B2
Filing date	Oct 31, 2022
Priority date	Mar 5, 2015
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

First claim

What is claimed is:

1. A light-emitting device (LED), comprising:
a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, the light-emitting epitaxial layer including a first type semiconductor layer, an active layer, and a second type semiconductor layer;
a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein;
a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and
a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer;
wherein the transparent dielectric layer includes a first layer and a second layer; and
wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

2. The LED of claim 1 , further comprising a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

3. The LED of claim 2 , wherein an angle between the side wall of the metal reflective layer and the second surface is 30°-85°.

4. The LED of claim 1 , wherein the transparent conductive layer has a thickness of 10-100 Å.

5. The LED of claim 1 , wherein a thickness of the transparent dielectric layer is more than 50 nm.

6. The LED of claim 1 , wherein the first surface of the light-emitting epitaxial laminated layer has a plurality of roughened patterns in a honeycomb structure, having a regular hexagon distribution.

7. The LED of claim 1 , wherein refractivities of the light-emitting epitaxial laminated layer, the first layer and the transparent conductive layer are r1, r2, and r3 respectively, with a relationship satisfying: r2<r3<r1.

8. The LED of claim 1 , wherein the first layer has a refractivity of less than 1.5.

9. The LED of claim 1 , wherein the transparent dielectric layer includes a silicon dioxide material layer, and wherein the conductive through-holes are filled with transparent conductive materials.

10. The LED of claim 1 , wherein the conductive through-holes are filled with a metal ohmic contact layer; and wherein the one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer is flush with the first transparent conductive layer.

11. The LED of claim 1 , wherein the second layer has a thickness that is less than 1% of a thickness of the first layer.

12. The LED of claim 1 , wherein the first layer is composed of a plurality of sub-layers.

13. Alight-emitting device (LED), comprising:
a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer;
a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein;
a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer;
a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer;
wherein the transparent dielectric layer includes a laminated structure alternately stacked with a first sub-layer and a second sub-layer, and a refractivity of the first sub-layer is less than refractivity of the second sub-layer.

14. The LED of claim 13 , wherein the first sub-layer is thicker than the second sub-layer.

15. The LED of claim 13 , wherein refractivities of the light-emitting epitaxial laminated layer, the first sub-layer and the transparent conductive layer are r1, r2, and r3 respectively, with a relationship satisfying: r2<r3<r1.

16. The LED of claim 13 , wherein thicknesses the first sub-layer and the second sub-layer have a gradual distribution and decrease gradually from a maximum at the epitaxial laminated layer.

17. The LED of claim 13 , wherein the transparent dielectric layer further includes a third sub-layer formed on the laminated structure and distal from the light-emitting epitaxial layer.

18. The LED of claim 17 , wherein the third sub-layer is made of SiO 2 .

19. The LED of claim 13 , wherein the transparent dielectric layer includes a silicon dioxide material layer, and wherein the conductive holes are filled with transparent conductive materials.

20. The LED of claim 13 , further comprising a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer, wherein an angle between the side wall of the metal reflective layer and the second surface is 30°-85°.

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Meng Cheng
• Jia Yuehua
• Wang Jing
• Wu Chun-Yi
• Tao Ching-Shan
• Wang Duxiang

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/831

  characterised by their shape · CPC title