Light emitting diode and fabrication method thereof

US10050181B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10050181-B2
Application numberUS-201715647127-A
CountryUS
Kind codeB2
Filing dateJul 11, 2017
Priority dateMar 5, 2015
Publication dateAug 14, 2018
Grant dateAug 14, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer. Refractivity of the transparent dielectric layer is less than that of the light-emitting epitaxial laminated layer and the transparent conductive layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A light-emitting diode (LED), comprising: a light-emitting epitaxial laminated layer, having a first surface and a second surface that are opposite to each other, comprising an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer that is in direct contact with the light-emitting epitaxial laminated layer, inside which are conductive holes; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; and refractivity of the transparent dielectric layer is less than refractivity of the light-emitting epitaxial laminated layer and the transparent conductive layer; wherein the light-emitting epitaxial laminated layer, the transparent dielectric layer and the transparent conductive layer form a reflectivity-enhancing system. 2. The LED of claim 1 , wherein: refractivities of the light-emitting epitaxial laminated layer, the transparent dielectric layer and the transparent conductive layer are r1, r2, and r3 respectively, with a relationship satisfying: r2<r3<r1. 3. The LED of claim 1 , wherein: roughness of the second surface of the light-emitting epitaxial laminated layer is less than roughness of the first surface. 4. The LED of claim 1 , wherein: the second surface of the light-emitting epitaxial laminated layer is a surface at one side of the n-type semiconductor layer. 5. The LED of claim 1 , wherein: the transparent dielectric layer is doped with foaming particles configured to generate gas bubbles when heated. 6. The LED of claim 5 , wherein: the foaming particles comprise at least one of CaCO 3 , BaCO 3 , Ca(HCO 3 ) 2 , Na 2 CO 3 , or NaHCO 3 . 7. The LED of claim 5 , wherein: the foaming particles are distributed at the side of the transparent dielectric layer adjacent to the light-emitting epitaxial laminated layer. 8. The LED of claim 1 , wherein: the transparent conductive layer is adhesive. 9. The LED of claim 1 , wherein: the transparent conductive layer is a sputtered ITO layer. 10. The LED of claim 1 , wherein: the transparent conductive layer has a thickness of 10-100 Å. 11. The LED of claim 1 , wherein: the transparent conductive layer is in a molecular state, and is distributed on the transparent dielectric layer in granular shapes. 12. The LED of claim 1 , wherein: the first surface of the light-emitting epitaxial laminated layer has a plurality of roughened patterns in a honeycomb structure, having a regular hexagon distribution. 13. A light-emitting system comprising a plurality of light-emitting diodes (LEDs), each LED comprising: a light-emitting epitaxial laminated layer, having a first surface and a second surface that are opposite to each other, comprising an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer that is in direct contact with the light-emitting epitaxial laminated layer, inside which are conductive holes; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; and refractivity of the transparent dielectric layer is less than refractivity of the light-emitting epitaxial laminated layer and the transparent conductive layer; wherein the light-emitting epitaxial laminated layer, the transparent dielectric layer and the transparent conductive layer form a reflectivity-enhancing system. 14. The system of claim 13 , wherein: refractivities of the light-emitting epitaxial laminated layer, the transparent dielectric layer and the transparent conductive layer are r1, r2, and r3 respectively, with a relationship satisfying: r2<r3<r1. 15. The system of claim 13 , wherein: roughness of the second surface of the light-emitting epitaxial laminated layer is less than roughness of the first surface. 16. The system of claim 13 , wherein: the second surface of the light-emitting epitaxial laminated layer is a surface at one side of the n-type semiconductor layer. 17. The system of claim 13 , wherein: the transparent dielectric layer is doped with foaming particles configured to generate gas bubbles when heated. 18. The system of claim 17 , wherein: the foaming particles comprise at least one of CaCO 3 , BaCO 3 , Ca(HCO 3 ) 2 , Na 2 CO 3 , or NaHCO 3 . 19. The system of claim 17 , wherein: the foaming particles are distributed at the side of the transparent dielectric layer adjacent to the light-emitting epitaxial laminated layer.

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What does patent US10050181B2 cover?
A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first …
Who is the assignee on this patent?
Xiamen Sanan Optoelectronics Technology Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L33/44. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 14 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).