Heterostructure of an electronic circuit having a semiconductor device

Patent metadata

Field	Value
Publication number	US-12094964-B2
Application number	US-202318332119-A
Country	US
Kind code	B2
Filing date	Jun 9, 2023
Priority date	Jul 12, 2018
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

An electronic circuit having a semiconductor device is provided that includes a heterostructure, the heterostructure including a first layer of a compound semiconductor to which a second layer of a compound semiconductor adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), wherein the 2-dimensional electron gas is not present. In aspects, an electronic circuit having a semiconductor device is provided that includes a III-V heterostructure, the III-V heterostructure including a first layer including GaN to which a second layer adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), and having a purity such that the 2-dimensional electron gas is not present. It is therefore advantageous for the present electronic circuit to be enclosed such that, in operation, no light of wavelengths of less than 400 nm may reach the III-V heterostructure and free charge carriers may be generated by these wavelengths.

First claim

What is claimed is:

1. An electronic circuit having a semiconductor device that comprises:
a heterostructure including a first layer and a second layer that together form a channel, wherein:
the first layer comprises a compound semiconductor to which the second layer adjoins,
the heterostructure is a III-V heterostructure,
the first layer includes fewer than 1×10 17 cm −3 unintentional background impurities, and
the heterostructure is grown on a substrate with a dislocation defect density of less than 1×10 7 cm −2 .

2. The electronic circuit according to claim 1 , wherein the heterostructure includes GaN.

3. The electronic circuit according to claim 1 , wherein the substrate includes GaN.

4. The electronic circuit according to claim 1 , wherein the semiconductor device includes a buffer layer which adjoins to the heterostructure.

5. The electronic circuit according to claim 1 , wherein the first layer has a thickness less than 100 nm.

6. The electronic circuit according to claim 1 , wherein the first layer has a dislocation defect density of less than 1×10 7 cm 2 .

7. The electronic circuit according to claim 1 , such that a 2-dimensional electron gas is formed in the channel when an electrical potential is applied.

8. The electronic circuit according to claim 1 , wherein the channel, in the absence of an external field, is substantially free of electrons from a 2-dimensional electron gas such that the entire channel is non-conducting.

9. An electronic circuit having a semiconductor device that comprises:
a heterostructure including a first layer and a second layer that together form a channel, wherein:
the first layer comprises a compound semiconductor to which the second layer adjoins,
the heterostructure is a III-V heterostructure,
the first layer includes fewer than 1×10 17 cm −3 oxygen atoms, and
the heterostructure is grown on a substrate with a dislocation defect density of less than 1×10 7 cm −2 .

10. The electronic circuit according to claim 9 , wherein the heterostructure includes GaN.

11. The electronic circuit according to claim 9 , wherein the substrate includes GaN.

12. The electronic circuit according to claim 9 , wherein the semiconductor device includes a buffer layer which adjoins to the heterostructure.

13. The electronic circuit according to claim 9 , wherein the first layer has a thickness less than 100 nm.

14. The electronic circuit according to claim 9 , wherein the first layer has a dislocation defect density of less than 1×10 7 cm −2 .

15. The electronic circuit according to claim 9 , such that a 2-dimensional electron gas is formed in the channel when an electrical potential is applied.

16. The electronic circuit according to claim 9 , wherein the channel, in the absence of an external field, is substantially free of electrons from a 2-dimensional electron gas such that the entire channel is non-conducting.

Assignees

• Namlab Ggmbh
• Univ Dresden Tech

Inventors

• Schmult Stefan
• Wachowiak Andre
• Ruf Alexander

Classifications

• H10D62/8503 Primary

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/826

  comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H10D62/86

  being Group II-VI materials, e.g. ZnO · CPC title

• H10D30/477

  Vertical HEMTs or vertical HHMTs · CPC title