Methods for fabricating silicon mems gyroscopes with upper and lower sense plates
US-2023076161-A1 · Mar 9, 2023 · US
US12092460B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12092460-B2 |
| Application number | US-202217980045-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 3, 2022 |
| Priority date | Sep 24, 2018 |
| Publication date | Sep 17, 2024 |
| Grant date | Sep 17, 2024 |
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Methods for fabricating MEMS tuning fork gyroscope sensor system using silicon wafers. This provides the possibly to avoid glass. The sense plates can be formed in a device layer of a silicon on insulator (SOI) wafer or in a deposited polysilicon layer in a few examples.
Opening claim text (preview).
What is claimed is: 1. A tuning fork gyroscope sensor, comprising: a silicon sense plate wafer including a silicon handle layer including vias for electrical connections, wherein the silicon sense plate wafer is a silicon on insulator (SOI) wafer; a silicon proof mass wafer, including a proof mass, bonded to the silicon sense plate wafer; and a sealing ring around the proof mass. 2. The sensor as claimed in claim 1 , wherein the silicon sense plate wafer further includes a silicon oxide layer. 3. The sensor as claimed in claim 1 , further comprising vias through the silicon handle layer for wire bonding into the vias to establish electrical connections for the sensor. 4. The sensor as claimed in claim 1 , further comprising vias through the handle layer which are filled with conductive material to provide electrical connections for the sensor. 5. The sensor as claimed in claim 1 , further comprising another silicon sense plate wafer on the other side of the proof mass wafer. 6. The sensor as claimed in claim 1 , wherein the silicon sense plate wafer is direct bonded to the silicon wafer proof mass wafer. 7. The sensor as claimed in claim 1 , wherein the silicon sense plate is metal bonded to the silicon wafer proof mass. 8. A tuning fork gyroscope sensor, comprising: a silicon sense plate wafer including a silicon handle layer including vias for electrical connections; a silicon proof mass wafer bonded to the silicon sense plate wafer; and a sealing ring around the proof mass, wherein a volumetric region in the sealing ring and around the proof mass is evacuated. 9. The sensor as claimed in claim 8 , wherein the sealing ring is a perimeter mesa. 10. A tuning fork gyroscope sensor, comprising: a silicon sense plate wafer including a silicon handle layer including vias for electrical connections; and a silicon proof mass wafer bonded to the silicon sense plate wafer; wherein the sense plate is a conductive polysilicon layer deposited on an insulating layer. 11. The sensor as claimed in claim 10 , further comprising a sealing ring around the proof mass. 12. The sensor as claimed in claim 11 , wherein the sealing ring is a perimeter mesa.
Soldering · CPC title
through the substrate · CPC title
Gyroscopes · CPC title
Wet etching · CPC title
Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title
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