Methods and structures of integrated MEMS-CMOS devices
US-9276080-B2 · Mar 1, 2016 · US
US2015166330A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015166330-A1 |
| Application number | US-201414507177-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 6, 2014 |
| Priority date | Nov 12, 2010 |
| Publication date | Jun 18, 2015 |
| Grant date | — |
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A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.
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What is claimed is: 1 . A method for fabricating a MEMS (Micro Electro Mechanical System) IC (Integrated Circuit) device comprising: receiving a CMOS substrate comprising a plurality of CMOS circuits and a first plurality of interconnection locations, wherein the first plurality of interconnection locations comprises a first set of locations and a second set of locations, wherein the CMOS substrate includes a surface portion, and wherein the first set of locations is disposed up…
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