Vacuum deposition facility and method for coating a substrate

US12091744B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12091744-B2
Application numberUS-201916973114-A
CountryUS
Kind codeB2
Filing dateApr 23, 2019
Priority dateJun 13, 2018
Publication dateSep 17, 2024
Grant dateSep 17, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a Vacuum deposition facility including a vacuum chamber, a coated substrate coated with at least one metal on both sides of the substrate and a vacuum deposition facility.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber, the method comprising the steps of: ejecting, in the vacuum chamber, a metallic vapor through at least two vapor ejectors, towards both sides of the running substrate, a layer of at least one metal being formed on each side by condensation of ejected vapors, the at least two vapor ejectors facing each other being positioned respectively with an angle α and α′ between the vapor ejector and an axis perpendicular to a running direction of the substrate, the axis being in the plane of the substrate, α and α′ both satisfying the following equations: α = arccos ⁡ ( W ⁢ s - ( D ⁢ 1 + D ⁢ 2 ) W ⁢ e ) ⁢ with ⁢ 0 ⁢ ° < α < 82 ⁢ ° ⁢ and α ′ = arccos ⁡ ( W ⁢ s - ( D ⁢ 1 + D ⁢ 2 ) W ⁢ e ) ⁢ with ⁢ 0 ⁢ ° < α ′ < 82 ⁢ ° , D 1 and D 2 being the distance between the ejectors and each substrate edge along the axis, W s being the substrate width, the vapor ejectors having an elongated shape and including a slot defined by a slot width We, the vapor ejectors having a same rotation axis. 2. The method as recited in claim 1 wherein the distance between the ejector and the substrate edges D 1 and D 2 are above 0 mm so ejector edges do not go beyond the substrate edges. 3. The method as recited in claim 1 wherein D 1 and D 2 are equal to 0 mm so the substrate edges are in a same plane as ejector edges. 4. The method as recited in claim 1 wherein D 1 and D 2 are below 0 mm so ejector edges extend beyond the substrate edges. 5. The method as recited in claim 1 wherein the substrate width Ws is maximum of 2200 mm. 6. The method as recited in claim 1 wherein Ws is minimum of 200 mm. 7. The method as recited in claim 1 wherein α′ is such that α-α′<10° in absolute terms. 8. The method as recited in claim 7 wherein α is between 0 and 60° in absolute terms. 9. The method as recited in claim 8 wherein α is between 10 and 50° in absolute terms. 10. The method as recited in claim 9 wherein α is between 20 and 350 in absolute terms. 11. The method as recited in claim 1 wherein the ejectors have a rectangular shape or a trapezoidal shape. 12. The method as recited in claim 1 wherein D 1 is identical to D 2 . 13. The method as recited in claim 1 wherein the vacuum chamber further comprises a central casing surrounding the substrate, the central casing including a substrate entry and a substrate exit located on two opposite sides of the central casing and the at the least two vapor ejectors. 14. The method as recited in claim 13 wherein inner walls of the central casing are suited to be heated at a temperature above a condensation temperature of the metal or metal alloy vapors. 15. The method as recited in claim 1 , wherein the at least two vapor ejectors eject metallic vapors at sonic speed on both sides of the running substrate. 16. The method as recited in claim 2 , wherein the at least two vapor ejectors eject metallic vapors at sonic speed on both sides of the running substrate.

Assignees

Inventors

Classifications

  • Vacuum evaporation · CPC title

  • C23C14/16Primary

    on metallic substrates or on substrates of boron or silicon · CPC title

  • C23C14/04Primary

    Coating on selected surface areas, e.g. using masks · CPC title

  • C23C14/562Primary

    for coating elongated substrates · CPC title

  • Sputtering · CPC title

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Frequently asked questions

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What does patent US12091744B2 cover?
A method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a Vacuum deposition facility including a vacuum chamber, a coated substrate coated with at least one metal on both sides of the substrate and a vacuum deposition facility.
Who is the assignee on this patent?
Arcelormittal
What technology area does this patent fall under?
Primary CPC classification C23C14/16. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 17 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).