Vacuum deposition facility and method for coating a substrate

Patent metadata

Field	Value
Publication number	US-12091739-B2
Application number	US-201916973097-A
Country	US
Kind code	B2
Filing date	Apr 23, 2019
Priority date	Jun 13, 2018
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

A method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber, a coated substrate coated with at least one metal and a vacuum deposition facility for the method for continuously depositing on a running substrate.

First claim

What is claimed is:

1. A method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber the method comprising the steps of:
ejecting, in the vacuum chamber, a metallic vapor through at least one vapor ejector, towards one side of the running substrate, a layer of at least one metal being formed on the side by condensation of ejected vapor, the at least one vapor ejector being positioned with an angle α between the vapor ejector and an axis perpendicular to a running direction of the substrate, the axis being in the plane of the substrate, α satisfying the following equation:
( D 1+ D 2)+ Le sin α+ We cos α= Ws,

α being in absolute value above 0°,

D1 and D2 being defined as a distance between the ejector and each substrate edges along the axis, W s being the substrate width, D1 and D2 being above 0 mm so the ejector edges do not extend beyond the substrate edges, the vapor ejector having an elongated shape and including a slot defined by a slot length Le and a slot width We.

2. The method as recited in claim 1 wherein D1 and D2 each are above 1 mm.

3. The method as recited in claim 1 wherein the substrate width Ws is maximum of 2200 mm.

4. The method as recited in claim 1 wherein Ws is minimum of 200 mm.

5. The method as recited in claim 1 wherein α is between 5 and 80° in absolute terms.

6. The method as recited in claim 5 wherein α is between 20 and 60° in absolute terms.

7. The method as recited in claim 6 wherein α is between 35 and 55° in absolute terms.

8. The method as recited in claim 1 wherein the slot length Le is between 5 and 50 mm.

9. The method as recited in claim 1 wherein the ejector has a rectangular shape or a trapezoidal shape.

10. The method as recited in claim 1 wherein D1 is identical to D2.

11. A metallic substrate obtained from the method as recited in claim 1 coated with at least one metal on one side of the substrate, an other substrate side including a maximum accumulation of the metal of 2.0 μm on edges of the other substrate side.

12. The metallic substrate as recited in claim 11 wherein the metal is chosen from: zinc, chromium, nickel, titanium, manganese, magnesium, silicon and aluminum or a mixture thereof.

13. The metallic substrate as recited in claim 11 wherein the metallic substrate is a steel substrate.

14. A vacuum deposition facility for the method as recited in claim 1 for continuously depositing, on the running substrate, the coatings formed from the at least one metal, the facility comprising:
the vacuum chamber, the substrate capable of running along a given path through the vacuum chamber, wherein the vacuum chamber further includes:
the at least one vapor ejector being positioned with the angle α between the vapor ejector and the axis perpendicular to the running direction of the substrate, the axis being in the plane of the substrate, a satisfying the following equation:
( D 1+ D 2)+ Le sin α+ We cos α= Ws,

α being in absolute value above 0°,
D1 and D2 being the distance between the ejector and each substrate edges along the axis and W s being the substrate width and D1 and D2 being above 0 mm so the ejector edges do not extend beyond the substrate edges, the at least one vapor ejector having the elongated shape and including the slot defined by the slot length Le and the slot width We.

15. The vacuum deposition facility as recited in claim 14 wherein the at least one vapor jet ejector is mounted to be able to rotate around a feeding pipe linked to a vapor source so that a is adjusted.

Assignees

• Arcelormittal

Inventors

• Silberberg Eric
• Pace Sergio
• Bonnemann Remy

Classifications

• C23C14/562

  for coating elongated substrates · CPC title

• C23C14/24 Primary

  Vacuum evaporation · CPC title

• C23C14/16 Primary

  on metallic substrates or on substrates of boron or silicon · CPC title

• C23C14/34

  Sputtering · CPC title

• C23C14/243

  Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title