Double-sided cooling type power module and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-12080674-B2
Application number	US-202318375761-A
Country	US
Kind code	B2
Filing date	Oct 2, 2023
Priority date	Mar 20, 2018
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

A power module includes: a first substrate having metal plates formed on one surface thereof; a second substrate spaced apart from the first substrate and having metal plates formed on one surface thereof facing the metal plates of the first substrate; a plurality of power elements disposed between the first substrate and the second substrate; a first electrode formed on the first substrate of each of the plurality of power elements; and a second electrode formed on the second surface of each of the plurality of power elements, where the plurality of power elements comprise a first power element in which the first electrode is bonded to the metal plates of the second substrate; and a second power element in which the first electrode is bonded to the metal plates of the first substrate.

First claim

What is claimed is:

1. A power module comprising:
a first substrate comprising a first metal plate disposed at a first side of the first substrate;
a second substrate spaced apart from the first substrate, the second substrate comprising a second metal plate that is disposed at a second side of the second substrate facing the first side;
a plurality of power elements disposed between the first substrate and the second substrate, the plurality of power elements comprising (i) a first power element coupled to the second metal plate and (ii) a second power element coupled to the first metal plate;
a first spacer electrically connected to a lower surface of the first metal plate and an upper surface of the first power element; and
a second spacer electrically connected to an upper surface of the second metal plate and a lower surface of the second power element,
wherein the plurality of power elements comprise:
a first electrode disposed at a first surface of each of the plurality of power elements, and
a second electrode disposed at a second surface of each of the plurality of power elements.

2. The power module according to claim 1 , wherein the plurality of power elements further comprise insulated gate bipolar transistor (IGBT) semiconductor elements,
wherein the first electrode comprises a gate electrode and an emitter electrode of one of the IGBT semiconductor elements, and
wherein the second electrode comprises a collector electrode of the one of the IGBT semiconductor elements.

3. The power module according to claim 2 , further comprising a signal pin and a terminal,
wherein each of the first and second metal plates comprises a portion bonded to the gate electrode, and another portion bonded to the signal pin or the terminal.

4. The power module according to claim 3 , wherein the gate electrode is connected to the signal pin or the terminal without a wire.

5. The power module according to claim 2 , wherein the first metal plate is electrically connected to the collector electrode of the first power element and the emitter electrode of the second power element.

6. The power module according to claim 5 , wherein at least one of the first spacer or the second spacer is bonded to the collector electrode of the first power element or the second power element,
wherein the first metal plate is bonded to the emitter electrode of the second power element and to at least one of the first spacer or the second spacer that is bonded to the collector electrode of the first power element.

7. The power module according to claim 1 , further comprising a signal pin and a terminal,
wherein the first metal plate comprises a plurality of first metal plates, one of the plurality of first metal plates defining at least one first slit and being coupled to the signal pin and the terminal, and
wherein the second metal plate comprises a plurality of second metal plates, one of the plurality of second metal plates defining at least one second slit and being coupled to the signal pin and the terminal.

8. The power module according to claim 7 , wherein the at least one first slit divides the one of the plurality of first metal plates to a plurality of metal plates.

9. The power module according to claim 1 , wherein the first substrate and the second substrate face each other, and
wherein the first and second metal plates are disposed at opposing surfaces of the first substrate and the second substrate.

10. The power module according to claim 1 , wherein a thickness of the first spacer is greater than a thickness of the first power element, the first spacer being configured to dissipate heat from the first metal plate and the first power element, and
wherein a thickness of the second spacer is greater than a thickness of the second power element, the second spacer being configured to dissipate heat from the second metal plate and the second power element.

11. The power module according to claim 1 , wherein the first substrate and the second substrate extend parallel to each other in a lateral direction, and the first spacer and the second spacer extend parallel to the first substrate and the second substrate,
wherein a length of the first spacer in the lateral direction is greater than a length of the first power element in the lateral direction,
wherein the first spacer covers an entirety of the upper surface of the first power element,
wherein a length of the second spacer in the lateral direction is greater than a length of the second power element in the lateral direction, and
wherein the second spacer covers an entirety of the lower surface of the second power element.

12. The power module according to claim 1 , wherein the first substrate and the second substrate are spaced apart from each other in a height direction, and
wherein a height of the first power element in the height direction is less than a height of the second power element in the height direction.

13. The power module according to claim 12 , wherein a lower end of the first spacer is disposed higher than a lower end of the second spacer in the height direction.

14. The power module according to claim 1 , further comprising a plurality of bonding portions that are disposed between the first power element and the second metal plate and between the second power element and the first metal plate.

15. The power module according to claim 1 , further comprising: a plurality of bonding portions that are disposed (i) between the first metal plate and the first spacer, (ii) between the first spacer and the first power element, (iii) between the second metal plate and the second spacer, and (iv) between the second spacer and the second power element.

16. The power module according to claim 15 , wherein the plurality of bonding portions are further disposed between the first power element and the second metal plate and between the second power element and the first metal plate.

17. The power module according to claim 1 , further comprising a signal pin and a terminal that extend outside the first and second substrates,
wherein at least one of the signal pin or the terminal is bent with respect to the first substrate or the second substrate.

18. The power module according to claim 1 , further comprising an insulation portion that is disposed between the first substrate and the second substrate and covers side surfaces of the first metal plate, the second metal plate, and the plurality of power elements.

19. The power module according to claim 1 , wherein the first metal plate comprises a plurality of first metal plates spaced apart from one another and arranged along a first surface of the first substrate, and
wherein the second metal plate comprises a plurality of second metal plates spaced apart from one another and arranged along a second surface of the second substrate facing the first surface of the first substrate.

20. The power module according to claim 1 , wherein the first spacer is arranged along the first metal plate, and the second spacer is arranged along the second metal plate, and
wherein the power module further comprises a plurality of bonding portions comprising:
first boding portions that couple the first electrode of the first power element to the second metal plate, that couple the second electrode of the first power element to the first spacer, and that couple the first spacer to the first metal plate, and
second boding portions that couple the first electrode of the second power element to the first metal plate, that couple the

Assignees

• Lg Electronics Inc

Inventors

• Oh Heoncheol
• Min Jaesang
• Park Yonghee
• Lee Jinwoo
• Cho Heejin

Classifications

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H10W72/9445

  Top-view layouts, e.g. mirror arrays · CPC title

• H10W72/936

  Multiple bond pads having different shapes · CPC title