Low temperature deposition of pure molybdenum films

Patent metadata

Field	Value
Publication number	US-12080558-B2
Application number	US-202318379515-A
Country	US
Kind code	B2
Filing date	Oct 12, 2023
Priority date	Feb 24, 2021
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

First claim

The invention claimed is:

1. A method of depositing a film, the method comprising:
exposing a substrate to a molybdenum halide precursor and an aluminum precursor to form a molybdenum film on the substrate, wherein the substrate is exposed to the molybdenum halide precursor and the aluminum precursor sequentially.

2. The method of claim 1 , wherein the molybdenum halide precursor comprises one or more of a molybdenum halide, a molybdenum carbonyl halide, and an organomolybdenum halide.

3. The method of claim 1 , wherein the aluminum precursor comprises an organic aluminum compound.

4. The method of claim 3 , wherein the aluminum precursor comprises one or more of dimethyl aluminum hydride, aluminum metal (elemental aluminum), aluminum chloride, trimethyl aluminum, triethyl aluminum, and diethyl aluminum hydride.

5. The method of claim 1 , further comprising purging the substrate of the molybdenum halide precursor prior to exposing the substrate to the aluminum precursor.

6. The method of claim 1 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate.

7. The method of claim 1 , wherein the substrate is exposed to the molybdenum halide precursor at a temperature less than 350° C.

8. The method of claim 7 , wherein the purge gas comprises one or more of argon (Ar), nitrogen (N 2 ), hydrogen (H 2 ), and helium (He).

9. The method of claim 1 , further comprising repeating the method to provide the molybdenum film having a thickness in a range of from 10 Å to about 500 Å.

10. The method of claim 1 , wherein the molybdenum film comprises greater than 99% molybdenum by atomic percent.

11. A method of depositing a film, the method comprising:
forming a molybdenum film in a process cycle comprising sequential exposure of a substrate to a molybdenum halide precursor, a first purge gas, an aluminum precursor, and a second purge gas.

12. The method of claim 11 , wherein the molybdenum halide precursor comprises one or more of a molybdenum halide, a molybdenum carbonyl halide, and an organomolybdenum halide.

13. The method of claim 11 , wherein the aluminum precursor comprises an organic aluminum compound.

14. The method of claim 13 , wherein the aluminum precursor comprises one or more of dimethyl aluminum hydride, aluminum metal (elemental aluminum), aluminum chloride, trimethyl aluminum, triethyl aluminum, and diethyl aluminum hydride.

15. The method of claim 11 , wherein the first purge gas and the second purge gas independently comprise one or more of argon (Ar), nitrogen (N 2 ), hydrogen (H 2 ), and helium (He).

16. The method of claim 11 , wherein the substrate is exposed to the molybdenum halide precursor at a temperature less than 350° C.

17. The method of claim 11 , further comprising repeating the method to provide the molybdenum film having a thickness in a range of from 10 Å to about 500 Å.

18. The method of claim 11 , wherein the substrate comprises at least one feature and the molybdenum film forms in the feature.

Assignees

• Applied Materials Inc

Inventors

• Bhatnagar Kunal
• Leshchev Dmitrii
• Verghese Mohith
• Romero Jose Alexandro

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/432

  using selective deposition · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title