Semiconductor structure and forming method thereof
US-2022115242-A1 · Apr 14, 2022 · US
US12076879B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12076879-B2 |
| Application number | US-202217649123-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2022 |
| Priority date | Feb 15, 2021 |
| Publication date | Sep 3, 2024 |
| Grant date | Sep 3, 2024 |
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A method of processing a workpiece includes holding a face side of the workpiece on a holding table having a region made of a transparent material and forming a processed groove in the workpiece with a cutting blade. The forming a processed groove includes capturing an image of the processed groove on a reverse side and the face side of the workpiece, and detecting whether a position of a first central line of the processed groove on the reverse side and a position of a second central line of the processed groove on the face side are in conformity in a predetermined plane. If the positions of the first and second central lines are not in conformity, then the forming a processed groove further has correcting a position of the center of the cutting blade in order to bring the positions of the first and second central lines into conformity.
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What is claimed is: 1. A method of processing a semiconductor wafer having devices formed on a face side of the wafer, comprising: a holding step of holding the face side of the wafer on a holding table having a region made of a transparent material while a reverse side of the wafer is being exposed; and a processed groove forming step of forming a processed groove in the wafer by cutting the wafer held on the holding table with a cutting blade, wherein the processed groove forming step includes: a first processed groove forming step of forming a first processed groove in the wafer, the first processed groove having a predetermined depth short of the face side, with a first cutting blade having a first thickness, a first image capturing step of capturing an image of the first processed groove on the reverse side of the wafer by a first image capturing unit, the first capturing unit being disposed on a first side of the holding table, a second processed groove forming step of positioning a second cutting blade that has a second thickness at the first processed groove and forming a second processed groove in the wafer along the first processed groove, the second processed groove extending to the face side, thereby dividing the wafer, a second image capturing step of capturing an image of the second processed groove on the face side of the wafer through the holding table by a second image capturing unit, the second image capturing unit being disposed on a second, opposite side of the holding table, and a detecting step of detecting whether or not a position of a first central line of the first processed groove whose image has been captured in the first image capturing step and a position of a second central line of the second processed groove whose image has been captured in the second image capturing step are in conformity with each other in a predetermined plane, and if the position of the first central line and the position of the second central line are not in conformity with each other in the predetermined plane in the detecting step, then the processed groove forming step further has a correcting step of correcting a position of a center of the cutting blade in order to bring the position of the first central line and the position of the second central line into conformity with each other. 2. The method of processing a wafer according to claim 1 , wherein the second cutting blade is smaller in edge thickness than the first cutting blade. 3. The method of processing a wafer according to claim 1 , wherein the first image capturing step includes capturing an image of the first processed groove on the reverse side with visible light using a first image capturing unit disposed above the wafer, the second image capturing step includes capturing an image of the second processed groove on the face side with visible light through the holding table using a second image capturing unit disposed below the wafer, and the detecting step includes detecting whether or not a position of a first central line of the first processed groove on the reverse side and a position of a second central line of the second processed groove on the face side are in conformity with each other in the predetermined plane. 4. A method of processing a semiconductor wafer having devices formed on a face side of the wafer, comprising: a holding step of holding the face side of the wafer on a holding table having a region made of a transparent material while a reverse side of the wafer is being exposed; and a processed groove forming step of forming a processed groove in the wafer by cutting the wafer held on the holding table with a cutting blade, wherein the processed groove forming step includes: a first processed groove forming step of forming a first processed groove in the wafer, the first processed groove having a predetermined depth short of the face side, with a first cutting blade having a first thickness, a first image capturing step of capturing an image of the first processed groove on the reverse side with infrared radiation through the holding table using a third an image capturing unit disposed below the wafer, a second processed groove forming step of positioning a second cutting blade that has a second thickness at the first processed groove and forming a second processed groove in the wafer along the first processed groove, the second processed groove extending to the face side, thereby dividing the wafer, a second image capturing step of capturing an image of the second processed groove on the face side with infrared radiation through the holding table using the third image capturing unit, and a detecting step of detecting whether or not a position of a first central line of the first processed groove on the reverse side whose image has been captured in the first image capturing step and a position of a second central line of the second processed groove on the face side whose image has been captured in the second image capturing step are in conformity with each other in the predetermined plane, and if the position of the first central line and the position of the second central line are not in conformity with each other in the predetermined plane in the detecting step, then the processed groove forming step further has a correcting step of correcting a position of a center of the cutting blade in order to bring the position of the first central line and the position of the second central line into conformity with each other. 5. The method of processing a wafer according to claim 1 , wherein in the processed groove forming step, the cutting blades cuts into the wafer from the reverse side of the wafer. 6. A method of processing a workpiece, comprising: a holding step of holding a face side of the workpiece on a holding table having a region made of a transparent material while a reverse side of the workpiece is being exposed; and a first processed groove forming step of forming a first processed groove in the workpiece by cutting the workpiece held on the holding table with a first cutting blade, wherein the first cutting blade cuts into the wafer from the reverse side of the wafer, wherein the first processed groove forming step includes: a first image capturing step of capturing an image of the first processed groove on the reverse side of the workpiece, a first detecting step of detecting whether or not a position of a first central line of the first processed groove whose image has been captured in the first image capturing step and a position of a first reference line are in conformity with each other in a predetermined plane, the first reference line representing a target position for the first central line, determining the position of the first central line and the position of the first reference line are not in conformity with each other in the predetermined plane in the first detecting step, a first correcting step of correcting a position of a center of the first cutting blade in order to bring the position of the first central line and the position of the first reference line into conformity with each other, a second processed groove forming step of forming a second processed groove in the workpiece by cutting the workpiece held on the holding table with a second cutting blade, wherein the second cutting blade cuts into the wafer from the reverse side of the wafer, wherein the second processed groove forming step includes: a second image capturing step of capturing an image of the second processed groove on the face side of the workpiece through the holding table, and a second detecting step of detecting whether or not a position of a second central line of the second processed groove whose image has been captured in the second image capturing step and a position of a secon
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
Cutting or separating of wafers, substrates or parts of devices · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
On sheet material · CPC title
for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065) · CPC title
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