Substrate processing apparatus, mixing method, and substrate processing method

Patent metadata

Field	Value
Publication number	US-12068175-B2
Application number	US-202217577143-A
Country	US
Kind code	B2
Filing date	Jan 17, 2022
Priority date	Mar 15, 2019
Publication date	Aug 20, 2024
Grant date	Aug 20, 2024

Abstract

A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

First claim

What is claimed is:

1. A method for preparing a substrate processing bath comprising:
generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve;
sending the mixture liquid to a processing bath through a liquid path, the liquid path 1) diverging from the circulation path at a position upstream from the back pressure valve, and 2) in communication with the processing bath;
supplying a silicon-containing compound aqueous solution to at least one of the liquid path and the processing bath;
controlling the flow of the mixture liquid in the circulation path, the liquid path, by adjusting the back pressure valve between being: 1) open, when the mixture liquid is generated while being circulated along the circulation path, and 2) throttled, to send the liquid mixture through the liquid path to the processing bath; and
controlling the mixing of the mixture liquid and the silicon-containing compound aqueous solution into the processing bath by controlling the flow of the mixture liquid in the liquid path and controlling the flow of the silicon-containing compound aqueous solution to at least one of the liquid path or the processing bath.

2. The method according to claim 1 , further comprising:
sequentially sending the mixture liquid from the tank to the processing bath.

3. A substrate processing method comprising:
generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve;
sending the mixture liquid to a processing bath through a liquid path, the liquid path 1) diverging from the circulation path at a position upstream from the back pressure valve, and 2) in communication with the processing bath;
supplying a silicon-containing compound aqueous solution to at least one of the liquid path and the processing bath; and
immersing a substrate in the processing bath;
controlling the flow of the mixture liquid in the circulation path, the liquid path, by adjusting the back pressure valve between being: 1) open, when the mixture liquid is generated while being circulated along the circulation path, and 2) throttled, to send the liquid mixture through the liquid path to the processing bath; and
controlling the mixing of the mixture liquid and the silicon-containing compound aqueous solution into the processing bath by controlling the flow of the mixture liquid in the liquid path and controlling the flow of the silicon-containing compound aqueous solution to at least one of the liquid path or the processing bath.

4. The substrate processing method according to claim 3 , wherein when the substrate is immersed in the processing bath, the mixture liquid not containing the silicon-containing compound aqueous solution is supplied to the processing bath, after the mixture liquid containing the silicon-containing compound aqueous solution is discharged from the processing bath.

5. The substrate processing method according to claim 3 , further comprising:
after the supplying of the silicon-containing compound aqueous solution to the processing bath, heating the mixture liquid to which the silicon-containing compound aqueous solution has been supplied.

6. The substrate processing method according to claim 3 , further comprising:
filtering the mixture liquid in the circulation path using a filter,
wherein the circulation path further includes a bypass flow path that bypasses the filter.

7. The substrate processing method according to claim 3 , further comprising:
setting a temperature of the mixture liquid based on whether to supply the silicon-containing compound aqueous solution to the mixture liquid.

8. The substrate processing method according to claim 3 , further comprising:
correcting a flow rate of the mixture liquid in the liquid path based on a temperature of the mixture liquid.

Assignees

• Tokyo Electron Ltd

Inventors

• Ogura Kouji
• Nonaka Jun
• Inada Takao
• Nishiwaki Yoshinori
• Yoshida Hiroshi

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0426 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/642

  Chemical etching · CPC title

• H01L21/67017

  Electricity · mapped topic