Nanoencapsulation methods for forming multilayer thin film structures and multilayer thin films formed therefrom

US12066595B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12066595-B2
Application numberUS-202117319369-A
CountryUS
Kind codeB2
Filing dateMay 13, 2021
Priority dateSep 27, 2018
Publication dateAug 20, 2024
Grant dateAug 20, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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A multilayer thin film structure having a reflective core particle, a dielectric layer directly encapsulating the reflective core particle, an absorber layer directly encapsulating the dielectric layer; an outer layer encapsulating the absorber layer. The multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for forming a multilayer thin film structure comprising: depositing a dielectric layer to a reflective core particle, wherein the dielectric layer directly encapsulates the reflective core particle, and the dielectric layer is deposited by chemical vapor deposition, atomic layer deposition, physical vapor deposition, or wet chemical processes; depositing an absorber layer to the dielectric layer, wherein the absorber layer is deposited by chemical vapor deposition, atomic layer deposition, physical vapor deposition, or wet chemical processes; and depositing an outer layer to the absorber layer, wherein the outer layer is deposited by chemical vapor deposition, atomic layer deposition, physical vapor deposition, or wet chemical processes, wherein the multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°; and the reflective core particle has a thickness from 10 nm to 5000 nm and a length from 5 μm to 100 μm. 2. The method of claim 1 , wherein the absorber layer is deposited by atomic layer deposition. 3. The method of claim 2 , wherein the absorber layer has a thickness from greater than 0 nm to 50 nm. 4. The method of claim 3 , wherein the absorber layer comprises W, Cr, Ge, Ni, stainless steel, Pd, Ti, Si, V, TIN, Co, Mo, Nb, ferric oxide, amorphous silicon, and combinations thereof. 5. The method of claim 2 , wherein the outer layer is deposited by chemical vapor deposition or wet chemical processes. 6. The method of claim 1 , wherein the dielectric layer is deposited by chemical vapor deposition or wet chemical processes. 7. The method of claim 1 , wherein the reflective core particle comprises Al, Ag, Pt, Sn, Au, Cu, brass, bronze, TIN, Cr, and combination thereof. 8. The method of claim 1 , wherein the dielectric layer has a thickness from 5 nm to 500 nm. 9. The method of claim 8 , wherein the dielectric layer comprises Fe 2 O 3 , ZnS, TiO 2 , TiN, ZrO 2 , CeO 2 , HfO 2 , and combinations thereof. 10. The method of claim 1 , wherein the outer layer has a thickness from 0.1 quarter wave (QW) to less than or equal to 4.0 QW. 11. The method of claim 10 , wherein the outer layer Fe 2 O 3 , ZnS, TiO 2 , TiN, ZrO 2 , CeO 2 , HfO 2 , and combinations thereof. 12. The method of claim 1 , wherein the outer layer is deposited by atomic layer deposition. 13. The method of claim 1 , wherein the method further comprises deposing a protective layer to the absorber layer before depositing the outer layer, wherein the protective layer is deposited by chemical vapor deposition, physical vapor deposition, atomic layer deposition, or wet chemical processes. 14. The method of claim 13 , wherein the protective layer has a thickness from greater than 0 nm to 50 nm. 15. The method of claim 14 , wherein the protective layer comprises Al 2 O 3 or SiO 2 . 16. The method of claim 14 , wherein the protective layer is deposited by atomic layer deposition.

Assignees

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Classifications

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Optical properties, e.g. expressed in CIELAB-values · CPC title

  • Magnetic properties · CPC title

  • Metallic pigments or fillers {(C09C1/0015 takes precedence)} · CPC title

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

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What does patent US12066595B2 cover?
A multilayer thin film structure having a reflective core particle, a dielectric layer directly encapsulating the reflective core particle, an absorber layer directly encapsulating the dielectric layer; an outer layer encapsulating the absorber layer. The multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°.
Who is the assignee on this patent?
Toyota Eng & Mfg North America
What technology area does this patent fall under?
Primary CPC classification G02B1/14. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 20 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).