Nanoencapsulation methods for forming multilayer thin film structures and multilayer thin films formed therefrom

Patent metadata

Field	Value
Publication number	US-11009630-B2
Application number	US-201916264170-A
Country	US
Kind code	B2
Filing date	Jan 31, 2019
Priority date	Sep 27, 2018
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A method for forming a multilayer thin film structure includes directly depositing an absorber layer to encapsulate a dielectric layer, and the dielectric layer encapsulates a reflective core particle. The method further including depositing an outer layer to encapsulate the absorber layer, and the multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°.

First claim

What is claimed is:

1. A method for forming a multilayer thin film structure comprising:
directly depositing an absorber layer to encapsulate a dielectric layer, wherein the dielectric layer directly encapsulates a reflective core particle; and
depositing an outer layer to encapsulate the absorber layer, wherein
the multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°,
the reflective core particle has a thickness from 10 nm to 5000 nm, and the reflective core particle has a length from 5 μm to 100 μm, and
the absorber layer is deposited by atomic layer deposition.

2. The method of claim 1 , wherein the method further comprises depositing the dielectric layer to directly encapsulate the reflective core particle.

3. The method of claim 1 , wherein the reflective core particle comprises Al.

4. The method of claim 1 , wherein the dielectric layer comprises Fe 2 O 3 , ZnS, or TiO 2 .

5. The method of claim 1 , wherein the dielectric layer has a thickness from 5 nm to 500 nm.

6. The method of claim 1 , wherein the absorber layer comprises W or Cr.

7. The method of claim 1 , wherein the absorber layer comprises W.

8. The method of claim 1 , wherein the absorber layer has a thickness from greater than 0 nm to 50 nm.

9. The method of claim 1 , wherein the outer layer comprises ZnS, TiO 2 , or Fe 2 O 3 .

10. The method of claim 1 , wherein the outer layer has a thickness from 0.1 quarter wave (QW) to less than or equal to 4.0 QW.

11. The method of claim 1 , wherein the outer layer is deposited by atomic layer deposition.

12. The method of claim 1 , wherein the method further comprises directly depositing a protective layer to encapsulate the absorber layer before depositing the outer layer.

13. The method of claim 12 , wherein the protective layer comprises Al 2 O 3 or SiO 2 .

14. The method of claim 12 , wherein the protective layer has a thickness from greater than 0 nm to 50 nm.

15. The method of claim 12 , wherein the protective layer is deposited by atomic layer deposition.

Assignees

• Toyota Eng & Mfg North America

Inventors

• Wu Songtao
• Banerjee Debasish

Classifications

• C01P2002/72

  by d-values or two theta-values, e.g. as X-ray diagram · CPC title

• C09D7/62

  modified by treatment with other compounds · CPC title

• C01P2004/04

  obtained by TEM, STEM, STM or AFM · CPC title

• G02B1/115

  Multilayers · CPC title

• C01P2006/66

  Hue (H*) · CPC title