Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same

Patent metadata

Field	Value
Publication number	US-12060650-B2
Application number	US-202117249395-A
Country	US
Kind code	B2
Filing date	Mar 1, 2021
Priority date	Mar 2, 2020
Publication date	Aug 13, 2024
Grant date	Aug 13, 2024

Abstract

An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm −1 at a wavelength between about 400 nm to about 800 nm.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A composition, comprising an aluminum doped silicon carbide crystal having impurities including residual nitrogen and residual boron, wherein the silicon carbide crystal includes aluminum at a concentration that is greater than a combined concentration of nitrogen and boron in the silicon carbide crystal, and wherein the silicon carbide crystal is for transmission of optical energy or information, wherein the optical energy or information comprises light having a wavelength in a range of from 420 nm to 4.5 μm, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm −1 at a wavelength in a range between about 400 nm to about 800 nm, and wherein the concentration of nitrogen in the silicon carbide crystal is less than or equal to about 1·10 16 cm −3 .

2. The composition of claim 1 , wherein the concentration of boron in the silicon carbide crystal is less than or equal to about 1·10 16 cm −3 .

3. The composition of claim 1 , wherein the concentration of aluminum in the silicon carbide crystal is less than about 5·10 17 cm −3 .

4. The composition of claim 1 , wherein the silicon carbide crystal is substantially free of aluminum induced defects.

5. The composition of claim 1 , wherein the silicon carbide crystal is a 4H polytype or a 6H polytype.

6. The composition of claim 1 , wherein the silicon carbide crystal exhibits an absorption coefficient below about 0.4 cm −1 at a wavelength of about 450 nm.

7. The composition of claim 1 , wherein the silicon carbide crystal exhibits an absorption coefficient below about 0.05 cm −1 at a wavelength of about 550 nm.

8. The composition of claim 1 , wherein the silicon carbide crystal exhibits an absorption coefficient below about 0.01 cm −1 at a wavelength of 650 nm.

Assignees

• Ii Vi Delaware Inc
• Ii Vi Advanced Mat Llc

Inventors

• Zwieback Ilya
• Rengarajan Varatharajan
• Souzis Andrew E
• Ruland Gary

Classifications

• G02B1/02 Primary

  made of crystals, e.g. rock-salt, semi-conductors (G02B1/08 takes precedence) · CPC title

• C30B29/66

  Crystals of complex geometrical shape, e.g. tubes, cylinders · CPC title

• C30B29/60

  characterised by shape · CPC title

• C30B23/02 Primary

  Epitaxial-layer growth · CPC title

• H10D62/60

  Impurity distributions or concentrations · CPC title