Display apparatus

Patent metadata

Field	Value
Publication number	US-12048208-B2
Application number	US-202318138870-A
Country	US
Kind code	B2
Filing date	Apr 25, 2023
Priority date	Sep 7, 2018
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

A display apparatus including a first thin-film transistor (TFT) including a first semiconductor layer including a silicon semiconductor; a second TFT including a second semiconductor layer including an oxide semiconductor; a first shielding layer configured to overlap the first TFT and positioned between a substrate and the first TFT; and a second shielding layer configured to overlap the second TFT and positioned between the substrate and the second TFT.

First claim

What is claimed is:

1. A display apparatus comprising:
a driving transistor comprising a first semiconductor layer comprising a silicon and a first gate electrode;
a first switching transistor comprising a second semiconductor layer comprising an oxide and a second gate electrode;
a first shielding layer overlapping the driving transistor, the first shielding layer interposed between a substrate and the first semiconductor layer;
a second shielding layer overlapping the first switching transistor, the second shielding layer interposed between the substrate and the second semiconductor layer; and
a first capacitor comprising a first electrode and a second electrode,
wherein:
the first electrode of the first capacitor is at least a part of the first gate electrode of the driving transistor, and the second electrode of the first capacitor is on the first gate electrode of the driving transistor and overlaps the first gate electrode of the driving transistor; and
the second electrode is positioned on the same layer as the second shielding layer.

2. The display apparatus of claim 1 , wherein the first shielding layer and the second shielding layer comprise different materials.

3. The display apparatus of claim 1 , wherein the second electrode and the second shielding layer comprise a same material.

4. The display apparatus of claim 1 , wherein a same voltage is applied to the second gate electrode and the second shielding layer.

5. The display apparatus of claim 1 , further comprising a second switching transistor comprising a third semiconductor layer comprising an oxide and a third gate electrode,
wherein a same voltage is applied to the third gate electrode and the second shielding layer.

6. The display apparatus of claim 1 , further comprising a second capacitor and comprising a first electrode and a second electrode overlapping the first electrode,
wherein the first electrode of the second capacitor is positioned on the same layer as the first gate electrode of the driving transistor, and the second electrode of the second capacitor is positioned on the same layer as the second semiconductor layer of the first switching transistor.

7. The display apparatus of claim 6 , wherein the second electrode of the second capacitor and the second semiconductor layer comprise a same material.

8. The display apparatus of claim 6 , wherein the second shielding layer is interposed between the first electrode and the second electrode of the second capacitor.

9. The display apparatus of claim 1 , further comprising a power line overlapping the first shielding layer.

10. A display apparatus comprising:
a substrate;
a first insulation layer on the substrate;
a driving transistor comprising a first gate electrode and a first semiconductor layer;
a first capacitor overlapping the driving transistor and comprising a first electrode and a second electrode, the first electrode being the first gate electrode and the second electrode overlapping the first electrode;
a first switching transistor including a second gate electrode and a second semiconductor layer, the second gate electrode being disposed over the first gate electrode of the driving transistor;
a second insulating layer disposed between the first gate electrode and the first semiconductor layer;
a third insulating layer disposed between the first electrode and the second electrode;
a fourth insulating layer disposed on the second electrode, the fourth insulating layer being disposed between the first gate electrode and the second gate electrode;
a fifth insulating layer disposed between the second gate electrode and the second semiconductor layer;
a first shielding layer overlapped with the driving transistor, the first shielding layer interposed between the substrate and the first semiconductor layer;
a second shielding layer overlapped with the first switching transistor, the second shielding layer interposed between the third insulating layer and the second semiconductor layer;
a first connecting electrode on the second gate electrode and connected to the first semiconductor layer and the second semiconductor layer; and
a second connecting electrode on the second gate electrode and connected to the first gate electrode and the second semiconductor layer.

11. The display apparatus of claim 10 , further comprising a second switching transistor comprising a third semiconductor layer comprising an oxide and a third gate electrode,
wherein the second semiconductor layer and the third semiconductor layer are one body.

12. The display apparatus of claim 10 , further comprising a second capacitor comprising a first electrode and a second electrode overlapping the first electrode of the second capacitor,
wherein the first electrode of the second capacitor is positioned on a same layer as the first gate electrode, and the second electrode of the second capacitor is positioned on a same layer as the second semiconductor layer.

13. The display apparatus of claim 12 , wherein the second electrode of the second capacitor and the second semiconductor layer comprise a same material.

14. The display apparatus of claim 12 , wherein the second shielding layer is interposed between the first electrode and the second electrode of the second capacitor.

15. The display apparatus of claim 10 , further comprising a power line overlapping the first shielding layer.

16. The display apparatus of claim 10 , wherein a same voltage is applied to the second gate electrode and the second shielding layer.

17. A display apparatus comprising a first pixel and a second pixel in display area, each of the first pixel and the second pixel comprising:
a driving transistor comprising a first semiconductor layer comprising silicon and a first gate electrode;
a switching transistor comprising a second semiconductor layer comprising an oxide and a second gate electrode;
a first shielding layer overlapping the driving transistor, the first shielding layer interposed between a substrate and the first semiconductor layer; and
a second shielding layer overlapping the switching transistor, the second shielding layer interposed between the substrate and the second semiconductor layer,
wherein:
the first shielding layer of the first pixel and the first shielding layer of the second pixel adjacent to the first pixel are spaced apart each other; and
the second shielding layer of the first pixel and the second shielding layer of the second pixel are one body.

18. The display apparatus of claim 17 , further comprising a power line overlapping first shielding layers and second shielding layers of the first pixel and the second pixel.

19. The display apparatus of claim 17 , wherein each of the first pixel and the second pixel further comprises a capacitor overlapping the driving transistor.

20. The display apparatus of claim 19 , wherein the capacitor comprises a first electrode and a second electrode, the second electrode positioned on the same layer as the second shielding layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Wang Seongmin
• Hwang Youngin
• Yang Yongho

Classifications

• H10K59/126 Primary

  Shielding, e.g. light-blocking means over the TFTs · CPC title

• H10K59/1216

  the pixel elements being capacitors · CPC title

• H10K59/1213 Primary

  the pixel elements being TFTs · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6743

  Silicon · CPC title