Light detecting device and electronic apparatus including shared reset and amplification transistors

US12047699B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12047699-B2
Application numberUS-202318093159-A
CountryUS
Kind codeB2
Filing dateJan 4, 2023
Priority dateJan 28, 2010
Publication dateJul 23, 2024
Grant dateJul 23, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

First claim

Opening claim text (preview).

What is claimed is: 1. A light detecting device, comprising: a first unit including: first photoelectric conversion regions; a first floating diffusion; a first reset transistor shared by the first photoelectric conversion regions; and a first amplification transistor shared by the first photoelectric conversion regions, and a second unit disposed adjacent to the first unit, the second unit including: second photoelectric conversion regions; a second floating diffusion; a second reset transistor shared by the second photoelectric conversion regions; and a second amplification transistor shared by the second photoelectric conversion regions, wherein the first amplification transistor and the second reset transistor are arranged along a first line in a plan view, the first reset transistor and the second amplification transistor are arranged along a second line in the plan view, and the first line is parallel to the second line in the plan view. 2. The light detecting device according to claim 1 , wherein the first and second photoelectric conversion regions are respectively arranged along a third line and a fourth line that are perpendicular to the first and second lines in the plan view. 3. The light detecting device according to claim 1 , wherein the first unit includes a first wiring connected to the first floating diffusion, a gate of the first amplification transistor and a drain of the first reset transistor. 4. The light detecting device according to claim 3 , wherein the second unit includes a second wiring connected to the second floating diffusion, a gate of the second amplification transistor, and a drain of the second reset transistor. 5. The light detecting device according to claim 4 , wherein the first wiring mirrors the second wiring about an axis. 6. An electronic apparatus comprising the light detecting device according to claim 1 . 7. The electronic apparatus according to claim 6 , wherein the first and second photoelectric conversion regions are respectively arranged along a third line and a fourth line that are perpendicular to the first and second lines in the plan view. 8. The electronic apparatus according to claim 6 , wherein the first unit includes a first wiring connected to the first floating diffusion, a gate of the first amplification transistor and a drain of the first reset transistor. 9. The electronic apparatus according to claim 8 , wherein the second unit includes a second wiring connected to the second floating diffusion, a gate of the second amplification transistor, and a drain of the second reset transistor. 10. The electronic apparatus according to claim 9 , wherein the first wiring mirrors the second wiring about an axis.

Assignees

Inventors

Classifications

  • H04N25/767Primary

    Horizontal readout lines, multiplexers or registers · CPC title

  • Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters · CPC title

  • Circuitry for generating timing or clock signals · CPC title

  • H10F39/802Primary

    Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

  • the integrated elements comprising a transistor · CPC title

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What does patent US12047699B2 cover?
A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reverse…
Who is the assignee on this patent?
Sony Group Corp
What technology area does this patent fall under?
Primary CPC classification H04N25/767. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 23 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).