Electrostatic puck and method of manufacture

Patent metadata

Field	Value
Publication number	US-12046502-B2
Application number	US-201916565054-A
Country	US
Kind code	B2
Filing date	Sep 9, 2019
Priority date	Sep 9, 2019
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

A method of constructing an E-puck includes forming at least one trench into a lower substrate, depositing an electrode material onto the lower substrate and into the at least one trench, removing excess electrode material from the lower substrate to leave the electrode material within the at least one trench to form an electrode, and forming a dielectric on the lower substrate and the electrode. The electrode is between the lower substrate and the upper substrate. Forming the at least one trench into the lower substrate forms at least one standoff portion adjacent to the at least one trench and the at least one standoff portion reduces dishing of the electrode material during removal of the excess electrode material from the lower substrate.

First claim

What is claimed is:

1. A method of constructing a puck for an electrostatic chuck, the electrostatic chuck being configured to operate at between 300 to 12,000 volts during semiconductor etching or processing, the method comprising the steps of:
forming at least one trench into an upper surface of a lower substrate;
depositing an electrode material onto the upper surface of the lower substrate and into the at least one trench, such that excess electrode material is disposed over the upper surface of the lower substrate and the at least one trench;
removing the excess electrode material from the lower substrate, including the excess electrode material from over the upper surface of the lower substrate and the at least one trench, to thereby leave the electrode material within the at least one trench of the lower substrate to form an electrode, wherein the electrode is flat and co-planar with the upper surface of the lower substrate; and
securing an upper substrate to the lower substrate without hot pressing, wherein securing the upper substrate to the lower substrate comprises bonding by a technique selected from the group consisting of brazing, adhesives, and transient liquid phase bonding,
wherein the lower substrate and the upper substrate comprise a ceramic material.

2. The method according to claim 1 , wherein the excess electrode material is removed by a process selected from a group consisting of a chemical-mechanical planarization/polishing (CMP), etching, and polishing.

3. The method according to claim 1 further comprising at least one standoff portion within the at least one trench.

4. The method according to claim 1 , wherein securing the upper substrate to the lower substrate comprises bonding the upper substrate to the lower substrate such that a bond area is formed by the bonding, the bond area being recessed from the lower surface of the upper substrate.

5. The method according to claim 1 , wherein the electrode is flat and co-planar with a wafer attached to the upper substrate after removing excess electrode material.

6. The method according to claim 1 further comprising forming mesas on an outer surface of the upper substrate.

7. The method according to claim 6 further comprising depositing an oxide layer onto the outer surface of the upper substrate layer.

8. The method according to claim 7 , wherein the oxide layer comprises at least one of yttria, alumina, sapphire, silica, and silicon carbide.

9. The method according to claim 1 , wherein the at least one trench is formed by a process selected from the group consisting of a laser removal process, a bead blasting process, machining, 3D sintering/printing/additive manufacturing, green state, molding, waterjet, hybrid laser/water, and dry plasma etching.

10. The method according to claim 1 , wherein the electrode material is deposited onto the lower substrate and into the at least one trench by a layered process.

11. The method according to claim 10 , wherein the layered process is selected from the group consisting of thick film, thin film, thermal spray, and sol-gel.

12. The method according to claim 1 , wherein the electrode material is deposited by melting a metal foil into the at least one trench.

13. The method according to claim 1 , wherein the lower substrate is a ceramic selected from the group consisting of aluminum nitride, and aluminum oxide and the electrode material is selected from the group consisting of titanium, molybdenum, tungsten, nickel, aluminum and alloys thereof.

14. The method according to claim 1 , wherein the step of removing the excess electrode material comprises at least one of lapping, polishing, and chemical mechanical polishing.

15. A method of constructing a puck for an electrostatic chuck, the electrostatic chuck being configured to operate at between 300 to 12,000 volts during semiconductor etching or processing, the method comprising the steps of:
forming at least one trench into a lower substrate, wherein a plurality of standoff portions are formed within the at least one trench;
depositing an electrode material onto the lower substrate and into the at least one trench, such that excess electrode material is disposed over the upper surface of the lower substrate and the at least one trench;
removing the excess electrode material from the lower substrate, including the excess electrode material from over the upper surface of the lower substrate and the at least one trench, to thereby leave the electrode material within the at least one trench to form an electrode, wherein the electrode is flat and co-planar with the upper surface of the lower substrate; and
securing an upper substrate to the lower substrate without hot pressing, wherein securing the upper substrate to the lower substrate comprises depositing a material using a layered process selected from the group consisting of thick film, thin film, thermal spray, and sol-gel,
wherein the lower substrate and the upper substrate comprise a ceramic material.

16. The method according to claim 15 , wherein securing the upper substrate to the lower substrate comprises bonding the upper substrate to the lower substrate such that a bond area is formed by the bonding, the bond area being recessed from the lower surface of the upper substrate.

17. The method according to claim 15 , wherein securing the upper substrate to the lower substrate comprises depositing a material using a thermal spray process.

18. The method according to claim 17 further comprising removing a portion of the upper substrate after depositing the material.

19. The method according to claim 17 , wherein the electrode material is deposited onto the substrate and into the at least one trench by a layered process.

20. A method of constructing a puck for an electrostatic chuck, the electrostatic chuck being configured to operate at between 300 to 12,000 volts during semiconductor etching or processing, the method comprising the steps of:
forming at least one trench into an upper surface of a lower substrate;
depositing an electrode material onto the upper surface of the lower substrate and into the at least one trench, such that excess electrode material is disposed over the upper surface of the lower substrate and the at least one trench;
removing the excess electrode material from the lower substrate, including the excess electrode material from over the upper surface of the lower substrate and the at least one trench, to thereby leave the electrode material within the at least one trench of the lower substrate to form an electrode, wherein the electrode is flat and co-planar with the upper surface of the lower substrate;
securing an upper substrate to the lower substrate without hot pressing; and
thinning and smoothing an upper surface of the upper substrate, such that the at least one electrode remains in contact with the upper substrate following thinning and smoothing of the upper surface of the upper substrate,
wherein the lower substrate and the upper substrate comprise a ceramic material.

Assignees

• Watlow Electric Mfg

Inventors

• Margavio Patrick
• English Kurt
• Ptasienski Kevin

Classifications

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/72 Primary

  using electrostatic chucks · CPC title

• H05B3/283

  the insulating material being an inorganic material, e.g. ceramic · CPC title

• H01L21/6833 Primary

  Electricity · mapped topic