Method for integrating surface-electrode ion trap and silicon photoelectronic device, integrated structure, and three-dimensional structure
US-2021151613-A1 · May 20, 2021 · US
US12041864B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12041864-B2 |
| Application number | US-202117491726-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 1, 2021 |
| Priority date | Oct 1, 2021 |
| Publication date | Jul 16, 2024 |
| Grant date | Jul 16, 2024 |
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Surface supported quantum wells with a confined surface state capture and stably confine neutral atoms and molecules in a nanometer precise environment. Depending on the physico-chemical conditions in the capturing process, the degree of occupancy, the temperature of the solid substrate, and/or the history of external stimuli like electromagnetic field pulses, these atoms, molecules or clusters assume unique configurations. The atoms or molecules are able to remain coupled to the quantum-well specific electronic state in the confinement and as such exhibit local and delocalized quantum entanglement. The capturing potential arises from the superposition of Pauli repulsion between the captured object and the quantum well-specific confined electronic state. This occurs within on-surface atomic or supramolecular assemblies or surface supported coordination or covalent networks.
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The invention claimed is: 1. A device for capturing free atoms or molecules or clusters or ions in a quantum well structure, comprising: a) a support layer of a conductive or insulating material; b) a conductive layer deposited on said support layer; and c) a quantum well structure fabricated on said conductive layer, said quantum well structure comprising a plurality of regular or irregular quantum cells forming together with the conductive layer a specific hosting quantum wave state or states; d) wherein the free atoms or molecules or clusters or ions are held contactlessly in said quantum cells by an interaction of the quantum wave state with the specific hosting quantum wave state of the respective quantum cell and the specific hosting quantum wave state or states of one or more adjacent quantum cells, without an evanescent field in the proximity of electromagnetic waveguides, generated by electrodes and/or magnetic coils. 2. The device according to claim 1 , wherein said conductive layer has a thickness of at least one atom layer. 3. The device according to claim 2 , wherein said conductive layer is a metallic layer. 4. The device according to claim 2 , wherein said conductive layer is formed of at least one material selected from the group consisting of Au, Ag, Bi, Cu, graphene, a semiconductor material, sulfur, and phosphorous. 5. The device according to claim 1 , wherein said quantum well structure is a self-assembled polymer structure. 6. The device according to claim 5 , wherein said polymer structure is assembled from cyano, imine, imide, thiol, thiophene, di-thiocarbamate, keto, alkyl, hydroxyl, carboxyl, or any other functional coordination linker attached to porphyrines, phthalocyanines, perylenes and other acenes, pyracenes, pyrimidines or any other molecular backbone suitable to link atomic or molecular coordination centers and form quantum wells by their interaction with electronic states in said conductive layer. 7. The device according to claim 6 , wherein said polymer structure and coordination linkers are deposited by a deposition technique in vacuum, or from a fluid phase. 8. The device according to claim 1 , wherein said quantum well structure forms an 1-dimensional (1D) or 2-dimensional (2D) array of quantum cells; each quantum cell weakly interacting with its nature and providing a hosting site for a captured free atom or molecule or cluster or ion, and said hosting site having a size down to a sub-nanometer range. 9. The device according to claim 1 , wherein the free atoms or the molecules or the clusters or the ions are deposited into the hosting sites by a vapor deposition method.
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