Method of manufacturing a super junction structure and super junction structure

Patent metadata

Field	Value
Publication number	US-12040358-B2
Application number	US-202117454168-A
Country	US
Kind code	B2
Filing date	Nov 9, 2021
Priority date	Nov 4, 2014
Publication date	Jul 16, 2024
Grant date	Jul 16, 2024

Abstract

A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.

First claim

What is claimed is:

1. A method of manufacturing a super junction structure, the method comprising:
etching a material to define a trench, wherein the trench has a tapered profile;
implanting dopants into borders of the trench to define a doped region surrounding the trench;
depositing an undoped polymer material into the trench; and
driving the dopants from the doped region into the undoped polymer material.

2. The method of claim 1 , wherein driving the dopants comprises performing a thermal process.

3. The method of claim 2 , wherein the thermal process produces a rounded bottom surface of the undoped polymer material.

4. The method of claim 1 , wherein implanting the dopants comprises implanting p-type dopants.

5. The method of claim 1 , further comprising forming the material over a substrate.

6. The method of claim 5 , wherein forming the material comprises epitaxially growing a semiconductor layer.

7. The method of claim 1 , wherein implanting the dopants comprises implanting the dopants into sidewalls and a bottom surface of the trench.

8. The method of claim 1 , wherein depositing the undoped polymer material comprises depositing polysilicon.

9. A method of manufacturing a super junction structure, the method comprising:
etching an epitaxial layer to define a trench, wherein sidewalls of the trench are angled with respect to a top-most surface of the epitaxial layer, and a bottom surface of the trench is parallel to the top-most surface of the epitaxial layer;
implanting dopants into borders of the trench to define a doped region, wherein the dopants have a different conductivity from the epitaxial layer;
depositing a material in the trench, wherein depositing the material comprises depositing an undoped polymer material; and
driving the dopants from the doped region into the material.

10. The method of claim 9 , wherein driving the dopants comprises performing a thermal process.

11. The method of claim 10 , wherein performing the thermal process comprises producing a rounded bottom surface of the material.

12. The method of claim 9 , further comprising planarizing the material in the trench.

13. The method of claim 9 , wherein implanting the dopants comprises implanting p-type dopants.

14. The method of claim 9 , wherein etching the epitaxial layer comprises etching the epitaxial layer using an etchant comprising at least one of carbon fluorides, sulfur hexafluoride, oxygen gas, helium, carbon chlorides, or argon.

15. The method of claim 9 , wherein depositing the undoped polymer material comprises depositing polysilicon.

16. A method of manufacturing a super junction structure, the method comprising:
etching a material to define a trench, wherein the trench has a tapered profile, and the trench has a flat bottom surface;
implanting dopants into borders of the trench to define a doped region surrounding the trench;
depositing an undoped polymer material into the trench; and
driving the dopants from the doped region into the undoped material.

17. The method of claim 16 , wherein driving the dopants into the undoped polymer material comprises changing the bottom surface to a curved bottom surface.

18. The method of claim 16 , wherein driving the dopants into the undoped polymer material comprise performing a thermal process.

19. The method of claim 16 , wherein implanting the dopants comprises performing a tilt implantation process and a vertical implantation process.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Zhang Shuai
• Han Feng
• Wu Jian
• Li lian-jie
• Chen zhong-hao

Classifications

• H10P32/1406

  by ion implantation · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title