Semiconductor device

Patent metadata

Field	Value
Publication number	US-12040301-B2
Application number	US-201917292878-A
Country	US
Kind code	B2
Filing date	Nov 8, 2019
Priority date	Nov 22, 2018
Publication date	Jul 16, 2024
Grant date	Jul 16, 2024

Abstract

Semiconductor device A 1 of the present disclosure includes: semiconductor element 10 (semiconductor elements 10 A and 10 B) having element obverse face and element reverse face facing toward opposite sides in z direction; support substrate 20 supporting semiconductor element 10 ; conductive block 60 (first block 61 and second block 62 ) bonded to element obverse face via first conductive bonding material (block bonding materials 610 and 620 ); and metal member (lead member 40 and input terminal 32 ) electrically connected to semiconductor element 10 via conductive block 60 . Conductive block 60 has a thermal expansion coefficient smaller than that of metal member. Conductive block 60 and metal member are bonded to each other by a weld portion (weld portions M 4 and M 2 ) at which a portion of conductive block 60 and a portion of metal member are welded to each other. Thus, the thermal cycle resistance can be improved.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor element having an element obverse face and an element reverse face facing toward opposite sides in a first direction;
a support substrate that supports the semiconductor element;
a conductive block bonded to the element obverse face via a first conductive bonding material; and
a metal member that is electrically connected to the semiconductor element via the conductive block, wherein
the conductive block has a thermal expansion coefficient smaller than a thermal expansion coefficient of the metal member,
the conductive block and the metal member are bonded to each other by a weld portion at which a portion of the conductive block and a portion of the metal member are welded to each other,
the conductive block is disposed between the metal member and the semiconductor element in the first direction, and
the conductive block comprises:
a first layer, and
a pair of second layers,
the first layer containing an alloy having a thermal expansion coefficient that is smaller than the thermal expansion coefficient of the metal member,
each of the second layers containing a metal that is different from the first layer, and
the first layer being sandwiched by the second layers in the first direction.

2. The semiconductor device according to claim 1 , wherein the first layer contains an alloy that is one of Inver, Kobar, or a CuMo sintered compact.

3. The semiconductor device according to claim 1 , wherein each of the second layers contains copper.

4. The semiconductor device according to claim 1 , wherein, in the first direction, an end portion of the weld portion on a side in a direction in which the element reverse face faces reaches the first layer.

5. The semiconductor device according to claim 1 , wherein the weld portion has an uneven surface facing in a same direction as the element obverse face.

6. The semiconductor device according to claim 1 , wherein
the metal member is a lead member,
the conductive block includes a first block disposed on the semiconductor element,
the weld portion includes a first weld portion at which a portion of the lead member and a portion of the first block are welded to each other, and
the support substrate includes a first conductor that is electrically connected to the semiconductor element via a second conductive bonding material, and a second conductor that is electrically connected to the semiconductor element via the lead member.

7. The semiconductor device according to claim 6 , wherein
the lead member is bonded to the second conductor, and
a portion of the lead member and a portion of the second conductor are bonded to each other by a second weld portion at which the portion of the lead member and the portion of the second conductor are welded to each other.

8. The semiconductor device according to claim 6 , wherein the support substrate includes an insulating substrate to which the first conductor and the second conductor are bonded.

9. The semiconductor device according to claim 6 , wherein the first conductor and the second conductor are composite substrates each comprising a graphite substrate and a copper film formed on the graphite substrate.

10. The semiconductor device according to claim 6 , wherein
the semiconductor element is referred to as a first semiconductor element,
the semiconductor device further comprising:
a second semiconductor element that differs from the first semiconductor element, and
the second semiconductor element is bonded to the second conductor.

11. The semiconductor device according to claim 10 , further comprising:
a first terminal that is conductively bonded to the first conductor;
a second terminal that is conductively bonded to the second semiconductor element; and
a third terminal that is conductively bonded to the second conductor.

12. The semiconductor device according to claim 11 , wherein
the conductive block further includes a second block disposed on the second semiconductor element, and
the second terminal is electrically connected to the second semiconductor element via the second block.

13. The semiconductor device according to claim 12 , wherein a length in the first direction of the first block is smaller than a length in the first direction of the second block.

14. A semiconductor device, comprising:
a first semiconductor element having an element obverse face and an element reverse face facing toward opposite sides in a first direction;
a support substrate that supports the first semiconductor element;
a conductive block bonded to the element obverse face via a first conductive bonding material, and
a metal member that is electrically connected to the first semiconductor element via the conductive block,
wherein
the conductive block has a thermal expansion coefficient smaller than a thermal expansion coefficient of the metal member,
the conductive block and the metal member are bonded to each other by a weld portion at which a portion of the conductive block and a portion of the metal member are welded to each other,
the metal member is a lead member,
the conductive block comprises:
a first block disposed on the first semiconductor element,

the weld portion includes a first weld portion at which a portion of the lead member and a portion of the first block are welded to each other,
the support substrate comprises:
a first conductor that is electrically connected to the first semiconductor element via a second conductive bonding material, and
a second conductor that is electrically connected to the first semiconductor element via the lead member,

the semiconductor device comprises:
a second semiconductor element that differs from the first semiconductor element, the second semiconductor element being bonded to the second conductor,
a first terminal that is conductively bonded to the first conductor,
a second terminal that is conductively bonded to the second semiconductor element, and
a third terminal that is conductively bonded to the second conductor,

the conductive block further comprises:
a second block disposed on the second semiconductor element, the second terminal being electrically connected to the second semiconductor element via the second block,
a length in the first direction of the first block is smaller than a length in the first direction of the second block,
the second terminal includes an extending portion that extends from the first conductor to the second conductor when viewed in the first direction, and
the extending portion is partially bonded to the second semiconductor element via the second block, and overlaps with the lead member as viewed in the first direction.

15. The semiconductor device according to claim 11 , further comprising a first spacer and a second spacer that are conductive, wherein
the first spacer overlaps with a portion of the first terminal and a portion of the first conductor as viewed in the first direction, and is interposed between the first terminal and the first conductor in the first direction, and
the second spacer overlaps with a portion of the third terminal and a portion of the second conductor as viewed in the first direction, and is interposed between the third terminal and the second conductor in the first direction.

16. The semiconductor device according to claim 15 , wherein
the first terminal and the first spacer are bonded to each other by a third weld portion at which a portion of the first terminal and a portion of the first spacer are welded to each other, and
the third termina

Assignees

• Rohm Co Ltd

Inventors

• Yoshihara Katsuhiko

Classifications

• H10W72/07653

  changes in shapes · CPC title

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W70/658

  for devices provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title