Semiconductor device and semiconductor apparatus including the same

Patent metadata

Field	Value
Publication number	US-12034036-B2
Application number	US-202117334030-A
Country	US
Kind code	B2
Filing date	May 28, 2021
Priority date	Nov 3, 2020
Publication date	Jul 9, 2024
Grant date	Jul 9, 2024

Abstract

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

First claim

What is claimed is:

1. An electronic device comprising:
a lower electrode;
an upper electrode spaced apart from the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising
a first metal oxide region comprising a first metal oxide of one or more of Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, Sr, or Lu,
a second metal oxide region comprising a second metal oxide, the second metal oxide comprising one or more of Y, Sc, or Ce and further comprising one or more of Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, Sr, or Lu, and
a third metal oxide region comprising a third metal oxide of one or more of Al, Mg, or Be,

wherein a thickness of the second metal oxide is less than a thickness of the first metal oxide.

2. The electronic device of claim 1 , wherein
the first metal oxide region includes a first metal oxide layer,
the second metal oxide region includes a second metal oxide layer,
the third metal oxide region includes a third metal oxide layer,
the first metal oxide layer, the second metal oxide layer, and the third metal oxide layer are, sequentially, in a stack between the lower electrode and the upper electrode in a thickness direction.

3. The electronic device of claim 1 , wherein
the second metal oxide region comprises a compound expressed as AxByOz,
where A is the one or more of Y, Sc, or Ce,
B is the one or more of Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, Sr, or Lu,
O is oxygen, and
x+y+z=1.

4. The electronic device of claim 3 , wherein, in the second metal oxide region, a ratio of the A to the B is greater than or equal to 0.01 and less than or equal to 1.0.

5. The electronic device of claim 3 , wherein the x is greater than 0.0 and less than or equal to 0.2.

6. The electronic device of claim 3 , wherein the x is greater than 0.0 and less than or equal to 0.15.

7. The electronic device of claim 3 , wherein the y is greater than 0.0 and less than or equal to 0.5.

8. The electronic device of claim 3 , wherein the y is greater than or equal to 0.2 and less than or equal to 0.5.

9. The electronic device of claim 1 , wherein
the first metal oxide region is adjacent to the lower electrode, and
the thickness of the first metal oxide region is greater than or equal to 40% of a total thickness of the dielectric layer.

10. The electronic device of claim 1 , wherein the thickness of the second metal oxide region is greater than or equal to 5 Å and less than or equal to 50 Å.

11. The electronic device of claim 1 , wherein a thickness of the dielectric layer is greater than or equal to 20 Å and less than or equal to 100 Å.

12. The electronic device of claim 1 , wherein at least one of the lower electrode or the upper electrode comprise a metal, a metal nitride, a metal oxide, or a combination thereof.

13. The electronic device of claim 1 , wherein
at least one of the lower electrode or the upper electrode comprise a metal nitride expressed as MM′N,
where M is one or more of Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, or U,
M′ is different from M and is one or more of H, Li, As, Se, N, O, P, S, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, or U, and
N is nitrogen.

14. An electronic device comprising:
a lower electrode;
an upper electrode spaced apart from the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising
an internal position between an upper oxide region and a lower oxide region of the dielectric layer, the internal position comprising a metal oxide compound expressed as AxByOz, where A is one or more of Y, Sc, and Ce, B is one or more of Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, Sr, or Lu, x+y+z=1, O is oxygen, and 0<x≤0.2, 0<y≤0.5, and a thickness of the lower oxide region is greater than or equal to 40% of a thickness of the dielectric layer,
wherein a concentration of A in the upper and lower oxide regions is less than x, and
the thickness of the lower oxide region is greater than a thickness of the upper oxide region.

15. The electronic device of claim 14 , wherein the thickness of the dielectric layer is greater than or equal to 10 Å and less than or equal to 50 Å.

16. The electronic device of claim 14 , wherein the x is greater than 0.0 and less than or equal to 0.15.

17. The electronic device of claim 14 , wherein the y is greater than or equal to 0.2 and less than or equal to 0.5.

18. An electronic device comprising:
a lower electrode;
an upper electrode spaced apart from the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode, the dielectric layer an oxide comprising one or more first elements selected from Hf, Zr, Nb, Ta, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Si, Ti, or Lu, one or more second elements selected from Y, Sc, or Ce, and one or more third elements selected from Al, Mg, or Be,
wherein the one or more second elements and the one or more third elements have a concentration gradient in a thickness direction of the dielectric layer, and each has a maximum concentration at different positions in the dielectric layer, and
wherein the dielectric layer includes an internal region between an upper oxide region and an oxide lower region, and the internal region includes the one or more second elements and at least one of the one or more first elements or the one or more third elements, and
the maximum concentration of the one or more second elements is in the internal region, and
wherein a thickness the internal region is less than a thickness of the lower oxide region.

19. The electronic device of claim 18 , wherein the maximum concentration of the one or more second elements is at a position greater than or equal to 40% and less than or equal to 90% of a thickness of the dielectric layer away from the lower electrode.

20. The electronic device of claim 18 , wherein a ratio of a content of the one or more second elements to a total content of metal elements in the dielectric layer is greater than 0.0 at % and less than or equal to 5.0 at %.

21. The electronic device of claim 18 , wherein the maximum concentration of the one or more third elements is at a position greater than 0% and less than or equal to 20% of a thickness of the dielectric layer away from the upper electrode.

22. The electronic device of claim 18 , wherein a ratio of a content of the one or more third elements to a total content of metal elements in the dielectric layer is greater than 0.0 at % and less than or equal to 5.0 at %.

23. The electronic device of claim 18 , wherein a ratio of a content of the one or more second elements to a content of the one or more third elements in the dielectric layer is greater than or equal to 10% and less than or equal to 200%.

24. A semiconductor apparatus comprising:
a field effect transistor; and
the electronic device of claim 1 electrically connected to the field effect transistor.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Song Jeonggyu
• Kim Younsoo
• Kim Haeryong
• Park Boeun
• Lee Eunha
• Lee Jooho
• Lee Hyangsook
• Cho Yong-Hee
• Cho Eunae

Classifications

• H10D62/151

  of IGFETs  (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713) · CPC title

• H10D1/684

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title

• H10D1/694 Primary

  comprising noble metals or noble metal oxides · CPC title

• H10B12/033

  the capacitor extending over the transistor · CPC title