Methods and circuits for power management of a memory module

Patent metadata

Field	Value
Publication number	US-12033683-B2
Application number	US-202217725026-A
Country	US
Kind code	B2
Filing date	Apr 20, 2022
Priority date	May 7, 2021
Publication date	Jul 9, 2024
Grant date	Jul 9, 2024

Abstract

A power-management integrated circuit (PMIC) is installed on a memory module to optimize power use among a collection of memory devices. The PMIC includes external power-supply nodes that receive relatively high and low supply voltages. Depending on availability, the PMIC uses one or both of these supply voltages to generate a managed supply voltage for powering the memory devices. The PMIC selects between operational modes for improved efficiency in dependence upon the availability of one or both externally provided supply voltages.

First claim

What is claimed is:

1. A power-management integrated circuit (PMIC) comprising:
a first external input node to receive a first supply voltage;
a second external input node to receive a second supply voltage lower than the first supply voltage;
an internal supply node to deliver an internal supply voltage lower than the first supply voltage;
an internal power supply coupled to the first and second external input nodes and the internal supply node, the internal power supply to derive the internal supply voltage from the first supply voltage in a first power mode and from the second supply voltage in a second power mode;
a voltage converter coupled to the first external input node and the internal supply node, the voltage converter to produce an external supply voltage from the first supply voltage and the internal supply voltage; and
an external output node coupled to the voltage converter to deliver the external supply voltage from the PMIC.

2. The PMIC of claim 1 , further comprising a control circuit coupled to the second external input node and the internal power supply, the control circuit to select between the first power mode and the second power mode responsive to the second supply voltage.

3. The PMIC of claim 2 , wherein the control circuit selects the first power mode responsive to a presence of the second supply voltage.

4. The PMIC of claim 2 , the control circuit to sense an absence of the second supply voltage and, in the absence of the second supply voltage, to place the internal power supply in the first power mode.

5. The PMIC of claim 1 , the internal power supply including a voltage regulator to down regulate the first supply voltage to the internal supply voltage.

6. The PMIC of claim 1 , the voltage converter including:
first power-switching elements coupled to the first external input node and powered by the first supply voltage;
first drive circuitry coupled to the internal supply node and powered by the internal supply voltage, the first drive circuitry to drive the first power-switching elements in the first power mode and the second power mode;
second power-switching elements coupled to the first external input node and powered by the first supply voltage;
second drive circuitry coupled to the internal supply node and powered by the internal supply voltage, the second drive circuitry to drive the second power-switching elements; and
selection circuitry to disable the second drive circuitry in the first power mode.

7. The PMIC of claim 6 , at least one of the first power-switching elements and the second power-switching elements comprising a field-effect transistor.

8. The PMIC of claim 6 , further comprising a pulse-control circuit coupled to the first and second drive circuitry, the pulse-control circuit to issues pulses to the first and second drive circuitry responsive to the external supply voltage.

9. A memory module comprising:
a wiring board;
memory devices mounted to the wiring board, each memory device having a memory-device power terminal; and
a power-management integrated circuit (PMIC) having:
a first external input node to receive a first supply voltage;
a second external input node to receive a second supply voltage lower than the first supply voltage;
an internal supply node to deliver an internal supply voltage lower than the first supply voltage;
an internal power supply coupled to the first and second external input nodes and the internal supply node, the internal power supply to derive the internal supply voltage from the first supply voltage in a first power mode and from the second supply voltage in a second power mode;
a voltage converter coupled to the first external input node and the internal supply node, the voltage converter to produce an external supply voltage; and
an external output node coupled between the voltage converter and, via the wiring board, to the memory-device power terminals, the external output node to deliver the external supply voltage from the PMIC to the memory devices.

10. The memory module of claim 9 , further comprising a clock-driver integrated circuit having a clock-driver power terminal coupled to the external output node of the PMIC to receive the external supply voltage.

11. The memory module of claim 9 , the PMIC further comprising a control circuit coupled to the second external input node and the internal power supply, the control circuit to select between the first power mode and the second power mode responsive to the second supply voltage.

12. The memory module of claim 11 , wherein the control circuit selects the first power mode responsive to a presence of the second supply voltage.

13. The memory module of claim 11 , the control circuit to sense an absence of the second supply voltage and, in the absence of the second supply voltage, to place the internal power supply in the first power mode.

14. The memory module of claim 9 , the voltage converter including:
first power-switching elements coupled to the first external input node and powered by the first supply voltage;
first drive circuitry coupled to the internal supply node and powered by the internal supply voltage, the first drive circuitry to drive the first power-switching elements in the first power mode and the second power mode;
second power-switching elements coupled to the first external input node and powered by the first supply voltage;
second drive circuitry coupled to the internal supply node and powered by the internal supply voltage, the second drive circuitry to drive the second power-switching elements; and
selection circuitry to disable the second drive circuitry in the first power mode.

15. The memory module of claim 14 , at least one of the first power-switching elements and the second power-switching elements comprising a field-effect transistor.

16. The memory module of claim 14 , the PMIC further comprising a pulse-control circuit coupled to the first and second drive circuitry, the pulse-control circuit to issues pulses to the first and second drive circuitry responsive to the external supply voltage.

17. A method of supplying power to memory devices on a memory module, the method comprising:
receiving a first supply voltage;
distinguishing between a presence of a second supply voltage lower than the first supply voltage and an absence of the second supply voltage;
in the presence of the second supply voltages, deriving a third supply voltage from the first supply voltage and the second supply voltage;
in the absence of the second supply voltage, deriving the third supply voltage from the first supply voltage; and
distributing the third supply voltage to the memory devices.

18. The method of claim 17 , further comprising, after deriving the third supply voltage from the first supply voltage and the second supply voltage, sensing the absence of the second supply voltage.

19. The method of claim 18 , wherein the deriving the third supply voltage from the first supply voltage in the absence of the second supply voltage is responsive to the sensing.

20. The method of claim 17 , further comprising monitoring the third supply voltage in the absence of the second supply voltage at a first speed and monitoring the third supply voltage in the presence of the second supply voltage at a second speed higher than the first speed.

Assignees

• Rambus Inc

Inventors

• Wijetunga Panduka
• Shallal Aws
• Esteves Joey M

Classifications

• G11C8/12

  Group selection circuits, e.g. for memory block selection, chip selection, array selection · CPC title

• G11C5/04

  Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports · CPC title

• G11C5/147

  Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence) · CPC title

• G11C11/4074 Primary

  Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title