Laminate and method for producing same
US-2022228266-A1 · Jul 21, 2022 · US
US12031213B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12031213-B2 |
| Application number | US-202017595570-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 9, 2020 |
| Priority date | Jul 31, 2019 |
| Publication date | Jul 9, 2024 |
| Grant date | Jul 9, 2024 |
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A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.
Opening claim text (preview).
The invention claimed is: 1. A laminate comprising a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, wherein pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater, wherein the passive film is formed on a surface of the nickel-containing plating layer by forcible oxidation of the nickel-containing plating layer. 2. The laminate according to claim 1 , wherein the metallic base material comprises at least a metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys. 3. The laminate according to claim 1 , having a nickel strike layer between the metallic base material and the nickel-containing plating film layer. 4. The laminate according to claim 1 , wherein the nickel-containing plating film layer comprises a nickel-phosphorus alloy plating layer (1) having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and a nickel-phosphorus alloy plating layer (2) having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower in this order from the metallic base material. 5. The laminate according to claim 1 , wherein the gold plating film layer comprises a displacement gold plating film layer and a reduction gold plating film layer in this order from the nickel-containing plating film layer. 6. A constituent member of a semiconductor production device, made up of the laminate according to claim 1 .
Composite having voids in a component [e.g., porous, cellular, etc.] · CPC title
No layer or component greater than 5 mils thick · CPC title
Next to refractory [Group IVB, VB, or VIB] metal-base component · CPC title
Oxide of transition metal or Al · CPC title
Au-base component · CPC title
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