Amplifier

Patent metadata

Field	Value
Publication number	US-12028023-B2
Application number	US-202117381652-A
Country	US
Kind code	B2
Filing date	Jul 21, 2021
Priority date	Mar 13, 2019
Publication date	Jul 2, 2024
Grant date	Jul 2, 2024

Abstract

Provided is an amplifier including: a first transistor connected to a signal input terminal; a second transistor connected to a signal output terminal; a wiring line configured to connect the first transistor and the second transistor to each other; and a variable inductor circuit which is electrically connected to the wiring line, and is grounded via a capacitor for DC current interruption, wherein the inductance value of the variable inductor circuit is set to an inductance value for canceling a parasitic capacitance between the first transistor and the second transistor.

First claim

The invention claimed is:

1. An amplifier, comprising:
a first transistor connected to a signal input terminal to which an input signal is to be input;
a second transistor connected to a signal output terminal from which an output signal is to be output;
a wiring line configured to cascade-connect the first transistor and the second transistor to each other; and
a variable inductor circuit which is electrically connected to the wiring line, has an inductance value that is variable, and is grounded via a capacitor for DC current interruption,
wherein the variable inductor circuit is configured to
obtain a plurality of optimum inductance values for each frequency and each process variation of the first transistor and the second transistor in advance,
obtain the optimum inductance value uniquely from the plurality of optimum inductance values, based on the value of the frequency and the process variation calculated from measurement data, and
set the inductance value of the variable inductor circuit to the uniquely obtained optimum inductance value.

2. The amplifier according to claim 1 , wherein the variable inductor circuit is formed of a metal pattern formed on a semiconductor substrate.

3. The amplifier according to claim 1 ,
wherein the variable inductor circuit is formed of a transformer, and
wherein the transformer includes:
a primary-side inductor having one end connected to the wiring line, and the other end grounded via the capacitor;
a secondary-side inductor coupled to the primary-side inductor with a coupling coefficient “k”; and
a capacitive load which has a positive terminal connected to one end of the secondary-side inductor and a negative terminal connected to the other end of the secondary-side inductor, and is formed of a variable capacitance element.

4. The amplifier according to claim 2 ,
wherein the variable inductor circuit is formed of a transformer, and
wherein the transformer includes:
a primary-side inductor having one end connected to the wiring line, and the other end grounded via the capacitor;
a secondary-side inductor coupled to the primary-side inductor with a coupling coefficient “k”; and
a capacitive load which has a positive terminal connected to one end of the secondary-side inductor and a negative terminal connected to the other end of the secondary-side inductor, and is formed of a variable capacitance element.

5. The amplifier according to claim 3 , wherein the variable capacitance element is formed of a diode.

6. The amplifier according to claim 4 , wherein the variable capacitance element is formed of a diode.

7. The amplifier according to claim 1 ,
wherein each of the first transistor and the second transistor is formed of a bipolar transistor, and
wherein the wiring line is configured to connect a collector terminal of the first transistor and an emitter terminal of the second transistor to each other.

8. The amplifier according to claim 2 ,
wherein each of the first transistor and the second transistor is formed of a bipolar transistor, and
wherein the wiring line is configured to connect a collector terminal of the first transistor and an emitter terminal of the second transistor to each other.

9. The amplifier according to claim 3 ,
wherein each of the first transistor and the second transistor is formed of a bipolar transistor, and
wherein the wiring line is configured to connect a collector terminal of the first transistor and an emitter terminal of the second transistor to each other.

10. The amplifier according to claim 4 ,
wherein each of the first transistor and the second transistor is formed of a bipolar transistor, and
wherein the wiring line is configured to connect a collector terminal of the first transistor and an emitter terminal of the second transistor to each other.

11. The amplifier according to claim 5 ,
wherein each of the first transistor and the second transistor is formed of a bipolar transistor, and
wherein the wiring line is configured to connect a collector terminal of the first transistor and an emitter terminal of the second transistor to each other.

12. The amplifier according to claim 6 ,
wherein each of the first transistor and the second transistor is formed of a bipolar transistor, and
wherein the wiring line is configured to connect a collector terminal of the first transistor and an emitter terminal of the second transistor to each other.

13. The amplifier according to claim 1 ,
wherein each of the first transistor and the second transistor is formed of a field effect transistor, and
wherein the wiring line is configured to connect a drain terminal of the first transistor and a source terminal of the second transistor to each other.

14. The amplifier according to claim 2 ,
wherein each of the first transistor and the second transistor is formed of a field effect transistor, and
wherein the wiring line is configured to connect a drain terminal of the first transistor and a source terminal of the second transistor to each other.

15. The amplifier according to claim 3 ,
wherein each of the first transistor and the second transistor is formed of a field effect transistor, and
wherein the wiring line is configured to connect a drain terminal of the first transistor and a source terminal of the second transistor to each other.

16. The amplifier according to claim 4 ,
wherein each of the first transistor and the second transistor is formed of a field effect transistor, and
wherein the wiring line is configured to connect a drain terminal of the first transistor and a source terminal of the second transistor to each other.

17. The amplifier according to claim 5 ,
wherein each of the first transistor and the second transistor is formed of a field effect transistor, and
wherein the wiring line is configured to connect a drain terminal of the first transistor and a source terminal of the second transistor to each other.

18. The amplifier according to claim 6 ,
wherein each of the first transistor and the second transistor is formed of a field effect transistor, and
wherein the wiring line is configured to connect a drain terminal of the first transistor and a source terminal of the second transistor to each other.

Assignees

• Mitsubishi Electric Corp

Inventors

• Sugitani Takumi
• Hangai Masatake
• Shinjo Shintaro

Classifications

• H03F2200/537

  A transformer being used as coupling element between two amplifying stages · CPC title

• H03F1/565 Primary

  using inductive elements · CPC title

• H03F1/223

  with MOSFET's · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F1/14

  by use of neutralising means · CPC title