Apparatus for treating substrate and method for treating substrate

Patent metadata

Field	Value
Publication number	US-12027381-B2
Application number	US-202017137181-A
Country	US
Kind code	B2
Filing date	Dec 29, 2020
Priority date	Dec 31, 2019
Publication date	Jul 2, 2024
Grant date	Jul 2, 2024

Abstract

Embodiments of the inventive concept provide an apparatus for treating a substrate. According to an exemplary embodiment, an apparatus for treating a substrate comprises a first valve and a second valve sequentially installed along a direction from a fluid supplying source to a high-pressure chamber in the supply line; a branch line branching from the supply line between the first valve and the second valve and connected to an exhaust line; a third valve installed on the branch line; an exhaust unit exhausting the process fluid inside the high-pressure chamber; and a controller, wherein the controller is configured to perform, before a transfer robot transfers the substrate to the high-pressure chamber for treating the substrate, a first operating of opening the first valve and closing the second valve and a third valve, and a second operating of closing the first valve and the second valve, and opening the third valve.

First claim

What is claimed is:

1. An apparatus for treating a substrate, the apparatus comprising:
a liquid treating chamber liquid treating a substrate by supplying a liquid to the substrate;
a high-pressure chamber providing a treating space where a process of treating the substrate is performed by using a process fluid;
a fluid supplying source providing the process fluid to the high-pressure chamber;
a supply line connecting the high-pressure chamber and the fluid supplying source;
a first valve and a second valve sequentially installed along a direction from the fluid supplying source to the high-pressure chamber on the supply line;
a branch line branching from the supply line between the first valve and the second valve;
an exhaust line connected to the branch line;
a third valve connected to each of the branch line and the exhaust line;
another exhaust line exhausting the process fluid inside the high-pressure chamber;
a transfer robot transferring the substrate between the liquid treating chamber and the high-pressure chamber; and
a controller
configured to perform, before the transfer robot transfers the substrate to the high-pressure chamber for treating the substrate:
a first operating of opening the first valve, and closing the second valve and the third valve before the substrate is loaded into the high-pressure chamber to process the substrate; and
a second operating of closing the first valve and the second valve, and opening the third valve to exhaust a remaining process fluid inside the supply line.

2. The apparatus of claim 1 , wherein the controller is configured to perform the first operating and the second operating in multiple times.

3. The apparatus of claim 1 , wherein the controller is configured to perform the first operating and the second operating while the substrate is liquid treated in the liquid treating chamber.

4. The apparatus of claim 1 , wherein an internal pressure of the supply line decompresses to atmospheric pressure according to an opening of the third valve.

5. The apparatus of claim 1 , wherein the substrate is treated by using the process fluid in a supercritical phase in the high-pressure chamber.

6. The apparatus of claim 1 , wherein the process fluid is carbon dioxide.

7. The apparatus of claim 1 , wherein the fluid supplying source supplies the process fluid in a supercritical phase to the high-pressure chamber.

8. An apparatus for treating a substrate, the apparatus comprising:
a liquid treating chamber liquid treating a substrate by supplying a liquid to the substrate;
a high-pressure chamber providing a treating space where a process of treating the substrate is performed by using a process fluid;
a fluid supplying source providing the process fluid to the high-pressure chamber;
a supply line connecting the high-pressure chamber and the fluid supplying source;
a first valve and a second valve sequentially installed along a direction from the fluid supplying source to the high-pressure chamber on the supply line;
a branch line branching from the supply line between the first valve and the second valve;
an exhaust line connected to the branch line;
a third valve connected to each of the branch line and the exhaust line;
another exhaust line exhausting the process fluid inside the high-pressure chamber;
a transfer robot transferring the substrate between the liquid treating chamber and the high-pressure chamber; and
a controller,
configured to perform, before the transfer robot transfers the substrate to the high-pressure chamber for treating the substrate;
a first operating of opening the first valve and the second valve, and closing the third valve before the substrate is loaded into the high-pressure chamber to process the substrate; and
a second operating of closing the first valve and the second valve, and opening the third valve to exhaust a remaining process fluid inside the supply line.

9. The apparatus of claim 8 , wherein the controller is configured to perform the first operating and the second operating in multiple times.

10. The apparatus of claim 8 , wherein the controller is configured to perform the first operating and the second operating while the substrate is liquid treated in the liquid treating chamber.

11. The apparatus of claim 8 , wherein an internal pressure of the supply line decompresses to atmospheric pressure according to an opening of the third valve.

12. The apparatus of claim 8 , wherein the substrate is treated by using the process fluid in a supercritical phase in the high-pressure chamber.

13. The apparatus of claim 8 , wherein the process fluid is carbon dioxide.

14. The apparatus of claim 8 , wherein the fluid supplying source supplies the process fluid in a supercritical phase to the high-pressure chamber.

Assignees

• Semes Co Ltd

Inventors

• Choi Youngseop
• Lee Young Hun
• Jung Jinwoo
• PARK Miso

Classifications

• H10P72/7602

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P72/0408 Primary

  for drying · CPC title