Resonators with different membrane thicknesses on the same die

Patent metadata

Field	Value
Publication number	US-12021496-B2
Application number	US-202017134213-A
Country	US
Kind code	B2
Filing date	Dec 25, 2020
Priority date	Aug 31, 2020
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

An acoustic resonator is fabricated by bonding a first piezoelectric plate to a substrate and spans locations for a first and second cavity in the substrate. A top surface of the first plate is planarized to a first thickness. A bonding layer is formed on the first piezoelectric plate and spans the first and second cavity locations. A second piezoelectric plate is bonded to the bonding layer and spans the first and second cavity locations. A top surface of the second plate is planarized to a second thickness. A portion of the second piezoelectric plate spanning the second cavity location is etched away to form a first membrane over the first cavity location and a second membrane over the second cavity location. Interdigital transducers are formed on the first and second membranes over the first and second cavity location to form a first and second resonator on the same die.

First claim

It is claimed:

1. A method for fabricating an acoustic resonator, the method comprising:
bonding a back surface of a first piezoelectric layer to a top surface of a substrate either directly or via one or more intermediate layers;
planarizing a top surface of the first piezoelectric layer to form a first thickness of the first piezoelectric layer, the first piezoelectric layer being over a location for a first cavity and a location for a second cavity extending in at least one of the substrate and the one or more intermediate layers;
forming a bonding layer on a top surface of the first piezoelectric layer the bonding layer being over the location for the first cavity and the location for the second cavity;
bonding a back surface of a second piezoelectric layer to a top surface of the bonding layer, the second piezoelectric layer being over the location for the first cavity and the location for the second cavity and comprising a first material capable of being etched by a first process;
planarizing a top surface of the second piezoelectric layer to form a second thickness of the second piezoelectric layer; and
etching away by the first process a portion of the second piezoelectric layer that is over the location for the second cavity,
wherein the bonding layer comprises a second material that is substantially impervious to the first process.

2. The method of claim 1 , wherein the etching includes masking to protect a second portion of the second piezoelectric layer over the location for the first cavity; and
wherein the etching away of the portion of the second piezoelectric layer to the bonding layer uses the bonding layer as an etch stop.

3. The method of claim 1 , further comprising:
forming a first interdigital transducer (IDT) on the second piezoelectric layer such that interleaved fingers of the first IDT are disposed over the location for the first cavity; and
forming a second IDT on the first piezoelectric layer such that interleaved fingers of the second IDT are disposed over the location for the second cavity.

4. The method of claim 3 , further comprising forming the first cavity at the first location and forming the second cavity at the second location, wherein the forming of the first and second cavities occurs before bonding the back surface of the first piezoelectric layer to the top surface of the substrate or after forming the first and second IDTs.

5. The method of claim 4 , wherein a first membrane comprises the first piezoelectric layer, the bonding layer, and the second piezoelectric layer over the first cavity; and a second membrane comprises the first piezoelectric layer and the bonding layer over the second cavity.

6. The method of claim 5 , wherein the first and second membranes and the first and second IDTs are configured such that respective radio frequency signals applied to the first and second IDTs excite respective primary shear acoustic modes in the first and second membranes that have different frequencies from one another.

7. The method of claim 1 , wherein the first and second piezoelectric layers are both either lithium niobate or lithium tantalate.

8. A method of forming a filter device, the method comprising:
bonding a first piezoelectric layer to a substrate over a location for a first cavity and a location for a second cavity;
forming a bonding layer on the first piezoelectric layer over the location for the first cavity and the location for the second cavity;
bonding a second piezoelectric layer to the bonding layer over the location for the first cavity and the location for the second cavity;
etching away a portion of the second piezoelectric layer that is over the location for the second cavity, the second piezoelectric layer comprising is a first material capable of being etched by the etching and the bonding layer comprising a second material that is substantially impervious to the etching;
forming a first interdigital transducer (IDT) on the second piezoelectric layer over the location for the first cavity; and
forming a second IDT on the bonding layer over the location for the second cavity.

9. The method of claim 8 , wherein the bonding layer is one of Al2O3 or SiO2.

10. The method of claim 8 , wherein the bonding layer acts as an etch stop during the etching away of the portion of the second piezoelectric layer.

11. The method of claim 8 , further comprising forming the first cavity at the first location and forming the second cavity at the second location, wherein the forming of the respective cavities occurs before bonding the first piezoelectric layer to the substrate or after forming the first and second IDTs.

12. The method of claim 11 , wherein a first resonator of a transversely-excited film bulk acoustic resonator (XBAR) comprises the first piezoelectric layer, the bonding layer, the second piezoelectric layer and the first IDT over the first cavity; and a second resonator of the XBAR comprises the first piezoelectric layer, the bonding layer and the second IDT over the second cavity.

13. The method of claim 12 , wherein the first and the second resonators are configured such that respective radio frequency signals applied to the first and second IDTs excite primary shear acoustic modes in the first and second resonators that have different frequencies from one another.

14. The method of claim 12 , wherein the first piezoelectric layer is thicker than the second piezoelectric layer, and the method further comprises selecting a thickness of the first piezoelectric layer and a thickness of the second piezoelectric layer to tune the primary shear acoustic modes of the first and second resonators.

15. The method of claim 8 , wherein the first and second piezoelectric layers are both either lithium niobate or lithium tantalate.

16. A method of forming a filter system comprising:
bonding a first piezoelectric layer to a substrate either directly or via one or more intermediate layers the first piezoelectric layer being over a location for a first cavity and a location for a second cavity;
forming a bonding layer on the first piezoelectric layer, the bonding layer comprising a material that is substantially impervious to an etching process and over the location for the first cavity and the location for the second cavity;
bonding a second piezoelectric layer to the bonding layer, the second piezoelectric layer being over the location for the first cavity and the location for the second cavity and comprising a material that is capable of being etched by the etching process; and
etching away by the etching process a portion of the second piezoelectric layer that is over the location for the second cavity.

17. The method of claim 16 , further comprising:
forming a first interdigital transducer (IDT) on the second piezoelectric layer such that interleaved fingers of the first IDT are disposed over the location for the first cavity;
forming a second IDT on the first piezoelectric layer such that interleaved fingers of the second IDT are disposed over the location for the second cavity; and
forming the first cavity at the first location and forming the second cavity at the second location, wherein forming the cavities occurs before bonding the first piezoelectric layer to the substrate or forming the first and second IDTs.

18. The method of claim 17 , wherein:
a first resonator of the filter system comprises the first piezoelectric layer, the bonding layer, the second piezoelectric layer and the first IDT over the first cavity; and a second resonator of the filter system comprises the first pi

Assignees

• Murata Manufacturing Co

Inventors

• Turner Patrick
• Jachowski Douglas
• Garcia Bryant

Classifications

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/02228

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H9/02157

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title

• H03H9/54

  comprising resonators of piezoelectric or electrostrictive material (comprising resonators using surface acoustic waves H03H9/64) · CPC title

• H03H9/205

  having multiple resonators (crystal tuning forks H03H9/21) · CPC title