Temperature-based memory management

US12019900B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12019900-B2
Application numberUS-202217697509-A
CountryUS
Kind codeB2
Filing dateMar 17, 2022
Priority dateNov 15, 2018
Publication dateJun 25, 2024
Grant dateJun 25, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Methods, systems, and devices for temperature-based memory management are described. A system may include a memory device and a host device. The host device may identify a temperature (e.g., of the memory device). The host device may determine a value for a parameter for operating the memory device—such as a timing, voltage, or frequency parameter—based on the temperature of the memory device. The host device may transmit signaling to the memory device or another component of the system based on the value of the parameter. In some cases, the host device may determine the temperature of the memory device based on an indication (e.g., provided by the memory device). In some cases, the host device may determine the temperature of the memory device based on a temperature of the host device or a temperature of another component of the system.

First claim

Opening claim text (preview).

What is claimed is: 1. A method, comprising: identifying a temperature of a memory device or of a host device coupled with the memory device; determining a value of a voltage for operating the memory device based at least in part on the temperature; transmitting signaling to a power supply for the memory device based at least in part on the value of the voltage; and transmitting, based at least in part on transmitting the signaling to the power supply, a command to the memory device with a timing that is based at least in part on the value of the voltage. 2. The method of claim 1 , wherein the signaling to the power supply indicates the value of the voltage. 3. The method of claim 1 , further comprising: sensing a temperature of the host device, wherein identifying the temperature of the memory device or the host device is based at least in part on sensing the temperature of the host device. 4. The method of claim 3 , further comprising: identifying an offset between the temperature of the host device and the temperature of the memory device, wherein identifying the temperature of the memory device is based at least in part on the offset. 5. The method of claim 1 , further comprising: determining that the temperature of the memory device or of the host device is below a threshold; and determining the value of the voltage for operating the memory device based at least in part on determining that the temperature of the memory device or of the host device is below the threshold. 6. The method of claim 1 , wherein the memory device comprises cells having capacitive storage elements. 7. An apparatus, comprising: logic operable to couple with a power supply for a memory device, the logic configured to: identify a temperature of the memory device or of a host device coupled with the memory device; determine a value of a voltage for operating the memory device based at least in part on the temperature; transmit signaling to the power supply based at least in part on the value of the voltage; and configure the host device to transmit, based at least in part on transmitting the signaling to the power supply, a command to the memory device with a timing that is based at least in part on the value of the voltage. 8. The apparatus of claim 7 , wherein the signaling to the power supply indicates the value of the voltage. 9. The apparatus of claim 7 , wherein the logic is further configured to: sense a temperature of the host device, wherein identifying the temperature of the memory device or the host device is based at least in part on sensing the temperature of the host device. 10. The apparatus of claim 9 , wherein the logic is further configured to: identify an offset between the temperature of the host device and the temperature of the memory device, wherein identifying the temperature of the memory device is based at least in part on the offset. 11. The apparatus of claim 7 , wherein the logic is further configured to: determine that the temperature of the memory device or of the host device is below a threshold; and determine the value of the voltage for operating the memory device based at least in part on determining that the temperature of the memory device or of the host device is below the threshold. 12. The apparatus of claim 7 , wherein the logic is a component of the host device. 13. The apparatus of claim 7 , wherein the memory device comprises cells having capacitive storage elements. 14. A system, comprising: a memory device; a host device coupled with the memory device; one or more temperature sensors operable to indicate a temperature of the memory device or the host device coupled with the memory device; and a power supply coupled with the memory device and operable to output a voltage based at least in part on the indicated temperature of the memory device or the host device, wherein the host device is configured to transmit a command with a timing that is based at least in part on the voltage output by the power supply. 15. The system of claim 14 , wherein the one or more temperature sensors comprise a temperature sensor of the memory device. 16. The system of claim 14 , wherein the one or more temperature sensors comprise a temperature sensor of the host device. 17. The system of claim 14 , wherein the one or more temperature sensors comprise a temperature sensor of a coupling component coupled with the memory device and coupled with the host device. 18. The system of claim 14 , wherein the host device is further configured to: receive the indication of the temperature from the one or more temperature sensors; and transmit signaling to the power supply to output the voltage based at least in part on receiving the indication of the temperature, wherein transmitting the command is based at least in part on transmitting the signaling to the power supply.

Assignees

Inventors

Classifications

  • G11C7/04Primary

    with means for avoiding disturbances due to temperature effects · CPC title

  • Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title

  • Improving or facilitating administration, e.g. storage management · CPC title

  • Single storage device · CPC title

  • Command handling arrangements, e.g. command buffers, queues, command scheduling · CPC title

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Frequently asked questions

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What does patent US12019900B2 cover?
Methods, systems, and devices for temperature-based memory management are described. A system may include a memory device and a host device. The host device may identify a temperature (e.g., of the memory device). The host device may determine a value for a parameter for operating the memory device—such as a timing, voltage, or frequency parameter—based on the temperature of the memory device. …
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification G11C7/04. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 25 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).